SFERA Archivio dei prodotti della Ricerca dell'Università di Ferrara

RAFFO, Antonio
 Distribuzione geografica
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Continente #
NA - Nord America 11.534
EU - Europa 2.619
AS - Asia 1.422
OC - Oceania 10
Continente sconosciuto - Info sul continente non disponibili 7
SA - Sud America 6
AF - Africa 2
Totale 15.600
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Nazione #
US - Stati Uniti d'America 11.522
CN - Cina 946
IT - Italia 769
UA - Ucraina 647
TR - Turchia 440
DE - Germania 320
GB - Regno Unito 259
PL - Polonia 210
SE - Svezia 207
FI - Finlandia 152
FR - Francia 15
AU - Australia 10
TW - Taiwan 10
BE - Belgio 8
CA - Canada 8
HK - Hong Kong 8
KR - Corea 6
NL - Olanda 5
A2 - ???statistics.table.value.countryCode.A2??? 4
BR - Brasile 4
CZ - Repubblica Ceca 4
IN - India 4
MX - Messico 4
RO - Romania 4
AT - Austria 3
BG - Bulgaria 3
CH - Svizzera 3
EU - Europa 3
VN - Vietnam 3
AR - Argentina 2
BD - Bangladesh 2
DZ - Algeria 2
IE - Irlanda 2
MD - Moldavia 2
RU - Federazione Russa 2
GR - Grecia 1
HR - Croazia 1
ID - Indonesia 1
JP - Giappone 1
MY - Malesia 1
PT - Portogallo 1
SI - Slovenia 1
Totale 15.600
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Città #
Fairfield 1.850
Woodbridge 1.572
Ashburn 1.082
Houston 1.054
Jacksonville 790
Ann Arbor 691
Seattle 674
Cambridge 617
Wilmington 596
Chandler 531
Ferrara 499
Nanjing 278
Izmir 252
Warsaw 210
Princeton 200
Beijing 191
San Diego 131
Boardman 117
Nanchang 70
Dearborn 65
Addison 61
Shenyang 59
Shanghai 54
Washington 48
Hebei 46
Milan 46
Mountain View 39
Tianjin 39
Jiaxing 38
Bologna 31
Redwood City 27
Changsha 26
Kunming 26
Norwalk 26
Des Moines 21
Zhengzhou 21
Auburn Hills 20
Jinan 20
London 19
Indiana 18
Los Angeles 16
Ningbo 16
Philadelphia 15
Settimo Milanese 15
Orange 14
San Mateo 14
Falls Church 13
Lanzhou 11
Ferrara di Monte Baldo 10
Taipei 10
Tappahannock 10
Chicago 8
Guangzhou 8
Haikou 8
Redmond 8
Verona 8
Brussels 7
Hong Kong 7
New York 7
Berlin 6
Kilburn 6
Taizhou 6
Toronto 6
Hangzhou 5
Changchun 4
Helsinki 4
Hounslow 4
Prescot 4
Amsterdam 3
Andover 3
Cottbus 3
Hefei 3
Lappeenranta 3
Massapequa 3
New Bedfont 3
New Orleans 3
San Francisco 3
Taiyuan 3
Torino 3
Vancouver 3
Vicenza 3
Vienna 3
Aci Catena 2
Cassino 2
Chengdu 2
Chisinau 2
Constantine 2
Dong Ket 2
Florence 2
Fuzhou 2
Garbagnate Milanese 2
Gavirate 2
Lucca 2
Melbourne 2
Modena 2
Naples 2
Paris 2
Parma 2
Pune 2
Rende 2
Totale 12.483
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Nome #
Dynamic-Bias S-Parameters: A New Measurement Technique for Microwave Transistors 263
A New Dynamic-Bias Measurement Setup for Nonlinear Transistor Model Identification 175
GaN HEMT Noise Model Based on Electromagnetic Simulations 166
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 164
Neural approach for temperature-dependent modeling of GaN HEMTs 159
Evaluation of Uncertainty in Temporal Waveforms of Microwave Transistors 144
Measurement Uncertainty Propagation in Transistor Model Parameters via Polynomial Chaos Expansion 140
A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique 139
Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design 131
A procedure for the extraction of a nonlinear microwave GaN FET model 129
Extremely Low-Frequency Measurements Using an Active Bias Tee 126
Millimeter-Wave FET Nonlinear Modelling Based on the Dynamic-Bias Measurement Technique 125
NONLINEAR EMBEDDING AND DE-EMBEDDING TECHNIQUES FOR LARGE-SIGNAL FET MEASUREMENTS 125
GaN HEMT noise modeling based on 50-Ω noise factor 123
Microwave transistor modeling 123
Experimental Investigation of LF dispersion and IMD asymmetry within GaN based HEMT technology 122
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance 120
Nonquasi-Static Large-Signal Model of GaN FETs through an Equivalent Voltage Approach 119
Modelling insight into the resonance frequencies of the microwave impedance parameters for GaAs HEMTs 119
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems 118
Behavioral Modeling of GaN FETs: a Load-Line Approach 117
Technology-Independent Analysis of the Double Current-Gain Peak in Millimeter-Wave FETs 117
X-Band GaN Power Amplifier for Future Generation SAR Systems 116
Temperature Influence on GaN HEMT Equivalent Circuit 116
GaN HEMT model extraction based on dynamic-bias measurements 115
Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design 114
Breakdown Walkout Investigation in Electron Devices Under Nonlinear Dynamic Regime 112
A New Empirical Model for the Characterization of Low-Frequency Dispersive Effects in FET Electron Devices Accounting for Thermal Influence on the Trapping State 111
GaN HEMT large-signal model accounting for both low-frequency dispersion and high-frequency non-quasi-static effects 111
A Nonquasi-Static Empirical Model of Electron Devices 110
High-Efficiency Broadband Power Amplifier Design Technique Based on a Measured-Load-Line Approach 110
null 110
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design 110
EM-based Modeling of Cascode FETs Suitable for MMIC Design 109
In-Deep Insight into the Extrinsic Capacitance Impact on GaN HEMT Modeling at Millimeter-Wave Band 108
null 108
Linear versus nonlinear de-embedding: Experimental investigation 107
On the use of the discrete-time convolution model for the compensation of non-idealities within digital acquisition channels 106
Automated Microwave Device Characterization Set-up Based on a Technology-Independent Generalized Bias System 106
A CLEAR-CUT UNDERSTANDING OF THE CURRENT-GAIN PEAK IN HEMTs: THEORY AND EXPERIMENTS 106
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data 106
A GaN power amplifier for 100 VDC bus in GPS L-band 106
A New Millimeter Wave Small-Signal Modeling Approach for pHEMTs Accounting for the Output Conductance Time Delay 105
A dual-source nonlinear measurement system oriented to the empirical characterization of low-frequency dispersion in microwave electron devices 105
Accurate Nonlinear Electron Device Modelling for Cold FET Mixer Design 105
Accurate GaN HEMT nonquasi-static large-signal model including dispersive effects 104
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design 104
A Small-Signal Parameter-Based Metric for Nonlinear Models of Electron Devices 104
Identification of the optimum operation for GaN HEMTs in high-power amplifiers 104
A new approach to Class-E power amplifier design 104
Characterization of GaN HEMT Low-Frequency Dispersion Through a Multi-Harmonic Measurement System 103
Kink Effect in S22 for GaN and GaAs HEMTs 103
GaN Ku-band low-noise amplifier design including RF life test 103
Evaluation of high-voltage transistor reliability under nonlinear dynamic operation 103
Scalable nonlinear FET model based on a distributed parasitic network description 102
null 102
Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements 102
Accurate EM-Based Modeling of Cascode FETs 102
Small-Signal Operation-Based Simplified Verification of Non-Linear Models for Millimeter-Wave Electron Devices 101
Nonlinear modeling of InP devices for W-band applications 101
A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology 101
Electron Device Model Parameter Identification Through Large-Signal-Predictive Small-Signal-Based Error Functions 100
null 100
“Hybrid” Approach to Microwave Power Amplifier Design 100
Microwave FET model identification based on vector intermodulation measurements 100
Workshops and short courses 100
Evaluation of FET performance and restrictions by low-frequency measurements 100
Waveform engineering: State-of-the-art and future trends (invited paper) 100
null 100
An Automated Measurement System for the Characterization of Electron Device Degradation under Nonlinear Dynamic Regime 99
Temperature dependent vector large-signal measurements 99
GaN power amplifier design exploiting wideband large-signal matching 99
Small- Versus Large-Signal Extraction of Charge Models of Microwave FETs 99
Empirical Investigation on Time Dispersion of Microwave Electron Device Characteristics under Nonlinear Dynamic Operating Conditions 99
An ultra-wideband sensing board for IoT 99
A New Approach to Microwave Power Amplifier Design Based on the Experimental Characterization of the Intrinsic Electron-Device Load-line 99
Automated Microwave Device Characterization Set-up Based on a Technology-independent Generalized Bias System 98
A distributed approach for millimetre-wave electron device modelling 98
Nonlinear model for 40-GHz cold-FET operation 98
Nonlinear Deembedding of Microwave Large-Signal Measurements 98
Extraction of an Extrinsic Parasitic Network for Accurate mm-Wave FET Scalable Modeling on the Basis of Full-Wave EM Simulation 98
Investigation on the Thermal Behavior of Microwave GaN HEMTs 97
null 97
A novel technique for the extraction of nonlinear model for microwave transistors under dynamic-bias operation 97
On-Wafer I/V measurement setup for the characterization of low-frequency dispersion in electron devices 97
Investigation on the non-quasi-static effect implementation for millimeter-wave FET models 96
On the evaluation of the high-frequency load line in active devices 96
Characterization of charge-trapping effects in GaN FETs through low-frequency measurements 96
Solid-state RF power amplifiers for ISM CW applications based on 100 V GaN technology 96
Scalable Equivalent Circuit FET Model for MMIC Design Identified Through FW-EM-Analyses 95
Thermal characterization of high-power GaN HEMTs up to 65 GHz 95
Impact of microwave measurement uncertainty on the Nonlinear Embedding procedure 95
Purely analytical extraction of an improved nonlinear FinFET model including non-quasi-static effects 94
75-VDC GaN technology investigation from a degradation perspective 94
Accurate Modeling of Electron Device I/V Characteristics Through a Simplified Large-Signal Measurement Setup 93
Non-linear look-up table modeling of GaAs HEMTs for mixer application 93
Accurate PHEMT Nonlinear Modeling in the Presence of Low-Frequency Dispersive Effects 93
Comparison of Electron Device Models Based on Operation-specific Metrics 93
Low-frequency dynamic drain current modeling in AlGaN-GaN HEMTs 92
Waveforms-Based Large-Signal Identification of Transistor Models 92
Totale 11.003
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Categoria #
all - tutte 56.544
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 719
Totale 57.263
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/20191.435 0 0 0 0 0 0 0 0 0 0 584 851
2019/20203.981 615 157 139 583 277 454 395 421 338 311 190 101
2020/20212.659 184 258 119 310 117 289 148 316 67 464 242 145
2021/20221.797 81 204 134 24 86 95 95 82 74 152 236 534
2022/20231.507 190 10 35 133 238 276 70 142 255 13 98 47
2023/2024836 95 146 82 40 127 189 56 48 15 28 10 0
Totale 15.912