IRIS
RAFFO, Antonio
 Distribuzione geografica
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Continente #
NA - Nord America 11.036
EU - Europa 2.580
AS - Asia 1.365
Continente sconosciuto - Info sul continente non disponibili 7
OC - Oceania 7
SA - Sud America 5
Totale 15.000
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Nazione #
US - Stati Uniti d'America 11.026
CN - Cina 898
IT - Italia 740
UA - Ucraina 647
TR - Turchia 440
DE - Germania 317
GB - Regno Unito 244
PL - Polonia 210
SE - Svezia 207
FI - Finlandia 151
BE - Belgio 22
FR - Francia 13
TW - Taiwan 10
AU - Australia 7
CA - Canada 7
KR - Corea 6
NL - Olanda 5
A2 - ???statistics.table.value.countryCode.A2??? 4
CZ - Repubblica Ceca 4
RO - Romania 4
AT - Austria 3
BR - Brasile 3
CH - Svizzera 3
EU - Europa 3
MX - Messico 3
VN - Vietnam 3
AR - Argentina 2
BD - Bangladesh 2
BG - Bulgaria 2
IN - India 2
MD - Moldavia 2
GR - Grecia 1
HK - Hong Kong 1
HR - Croazia 1
ID - Indonesia 1
IE - Irlanda 1
JP - Giappone 1
MY - Malesia 1
PT - Portogallo 1
RU - Federazione Russa 1
SI - Slovenia 1
Totale 15.000
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Città #
Fairfield 1.837
Woodbridge 1.567
Houston 1.050
Jacksonville 790
Ashburn 757
Ann Arbor 687
Seattle 670
Cambridge 612
Wilmington 591
Chandler 527
Ferrara 489
Nanjing 278
Izmir 252
Warsaw 210
Princeton 199
Beijing 191
San Diego 131
Boardman 117
Nanchang 70
Dearborn 64
Addison 61
Shenyang 59
Hebei 46
Milan 45
Mountain View 39
Tianjin 39
Jiaxing 38
Bologna 27
Redwood City 27
Changsha 26
Kunming 26
Norwalk 26
Brussels 21
Des Moines 21
Zhengzhou 21
Auburn Hills 20
Jinan 20
London 20
Indiana 18
Philadelphia 18
Ningbo 16
Orange 14
San Mateo 14
Settimo Milanese 14
Falls Church 13
Los Angeles 12
Lanzhou 11
Ferrara di Monte Baldo 10
Taipei 10
Chicago 9
Tappahannock 9
Guangzhou 8
Haikou 8
Redmond 8
Verona 8
New York 7
Berlin 6
Shanghai 6
Taizhou 6
Toronto 6
Hangzhou 5
Changchun 4
Helsinki 4
Amsterdam 3
Andover 3
Cottbus 3
Hefei 3
New Orleans 3
San Francisco 3
Taiyuan 3
Torino 3
Vancouver 3
Vicenza 3
Aci Catena 2
Chengdu 2
Chisinau 2
Dong Ket 2
Florence 2
Fuzhou 2
Garbagnate Milanese 2
Gavirate 2
Islington 2
Lappeenranta 2
Lucca 2
Modena 2
Naples 2
New Bedfont 2
Paris 2
Rende 2
Rome 2
Saint Paul 2
Stockholm 2
Vienna 2
Walnut 2
Yellow Springs 2
Zurich 2
Aachen 1
Atlanta 1
Baotou 1
Bremen 1
Totale 11.995
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Nome #
Dynamic-Bias S-Parameters: A New Measurement Technique for Microwave Transistors 264
A New Dynamic-Bias Measurement Setup for Nonlinear Transistor Model Identification 172
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 162
GaN HEMT Noise Model Based on Electromagnetic Simulations 158
Neural approach for temperature-dependent modeling of GaN HEMTs 151
Measurement Uncertainty Propagation in Transistor Model Parameters via Polynomial Chaos Expansion 140
Evaluation of Uncertainty in Temporal Waveforms of Microwave Transistors 137
A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique 134
Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design 124
A procedure for the extraction of a nonlinear microwave GaN FET model 124
NONLINEAR EMBEDDING AND DE-EMBEDDING TECHNIQUES FOR LARGE-SIGNAL FET MEASUREMENTS 123
Extremely Low-Frequency Measurements Using an Active Bias Tee 122
Millimeter-Wave FET Nonlinear Modelling Based on the Dynamic-Bias Measurement Technique 118
GaN HEMT noise modeling based on 50-Ω noise factor 118
Microwave transistor modeling 118
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance 118
Experimental Investigation of LF dispersion and IMD asymmetry within GaN based HEMT technology 117
X-Band GaN Power Amplifier for Future Generation SAR Systems 115
Modelling insight into the resonance frequencies of the microwave impedance parameters for GaAs HEMTs 115
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems 115
Technology-Independent Analysis of the Double Current-Gain Peak in Millimeter-Wave FETs 113
Breakdown Walkout Investigation in Electron Devices Under Nonlinear Dynamic Regime 111
Temperature Influence on GaN HEMT Equivalent Circuit 111
Behavioral Modeling of GaN FETs: a Load-Line Approach 110
null 110
GaN HEMT model extraction based on dynamic-bias measurements 110
A Nonquasi-Static Empirical Model of Electron Devices 109
Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design 108
null 108
High-Efficiency Broadband Power Amplifier Design Technique Based on a Measured-Load-Line Approach 107
Automated Microwave Device Characterization Set-up Based on a Technology-Independent Generalized Bias System 106
GaN HEMT large-signal model accounting for both low-frequency dispersion and high-frequency non-quasi-static effects 106
A New Millimeter Wave Small-Signal Modeling Approach for pHEMTs Accounting for the Output Conductance Time Delay 105
EM-based Modeling of Cascode FETs Suitable for MMIC Design 105
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data 105
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design 105
A CLEAR-CUT UNDERSTANDING OF THE CURRENT-GAIN PEAK IN HEMTs: THEORY AND EXPERIMENTS 104
A New Empirical Model for the Characterization of Low-Frequency Dispersive Effects in FET Electron Devices Accounting for Thermal Influence on the Trapping State 104
Accurate Nonlinear Electron Device Modelling for Cold FET Mixer Design 104
Nonquasi-Static Large-Signal Model of GaN FETs through an Equivalent Voltage Approach 103
Accurate GaN HEMT nonquasi-static large-signal model including dispersive effects 103
A new approach to Class-E power amplifier design 103
GaN Ku-band low-noise amplifier design including RF life test 103
A GaN power amplifier for 100 VDC bus in GPS L-band 103
Scalable nonlinear FET model based on a distributed parasitic network description 102
Linear versus nonlinear de-embedding: Experimental investigation 102
A Small-Signal Parameter-Based Metric for Nonlinear Models of Electron Devices 102
A dual-source nonlinear measurement system oriented to the empirical characterization of low-frequency dispersion in microwave electron devices 102
In-Deep Insight into the Extrinsic Capacitance Impact on GaN HEMT Modeling at Millimeter-Wave Band 102
An ultra-wideband sensing board for IoT 102
null 102
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design 101
Electron Device Model Parameter Identification Through Large-Signal-Predictive Small-Signal-Based Error Functions 100
On the use of the discrete-time convolution model for the compensation of non-idealities within digital acquisition channels 100
null 100
Identification of the optimum operation for GaN HEMTs in high-power amplifiers 100
Kink Effect in S22 for GaN and GaAs HEMTs 100
null 100
Automated Microwave Device Characterization Set-up Based on a Technology-independent Generalized Bias System 98
An Automated Measurement System for the Characterization of Electron Device Degradation under Nonlinear Dynamic Regime 98
Workshops and short courses 98
Nonlinear model for 40-GHz cold-FET operation 98
Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements 98
A novel technique for the extraction of nonlinear model for microwave transistors under dynamic-bias operation 98
“Hybrid” Approach to Microwave Power Amplifier Design 97
Evaluation of FET performance and restrictions by low-frequency measurements 97
null 97
Waveform engineering: State-of-the-art and future trends (invited paper) 97
Temperature dependent vector large-signal measurements 96
Microwave FET model identification based on vector intermodulation measurements 96
Nonlinear modeling of InP devices for W-band applications 96
Solid-state RF power amplifiers for ISM CW applications based on 100 V GaN technology 96
Accurate EM-Based Modeling of Cascode FETs 96
A distributed approach for millimetre-wave electron device modelling 95
Characterization of GaN HEMT Low-Frequency Dispersion Through a Multi-Harmonic Measurement System 95
GaN power amplifier design exploiting wideband large-signal matching 95
Characterization of charge-trapping effects in GaN FETs through low-frequency measurements 95
Empirical Investigation on Time Dispersion of Microwave Electron Device Characteristics under Nonlinear Dynamic Operating Conditions 95
Nonlinear Deembedding of Microwave Large-Signal Measurements 95
A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology 95
Evaluation of high-voltage transistor reliability under nonlinear dynamic operation 94
Accurate Modeling of Electron Device I/V Characteristics Through a Simplified Large-Signal Measurement Setup 93
On the evaluation of the high-frequency load line in active devices 93
Small- Versus Large-Signal Extraction of Charge Models of Microwave FETs 93
Thermal characterization of high-power GaN HEMTs up to 65 GHz 93
Extraction of an Extrinsic Parasitic Network for Accurate mm-Wave FET Scalable Modeling on the Basis of Full-Wave EM Simulation 93
Accurate PHEMT Nonlinear Modeling in the Presence of Low-Frequency Dispersive Effects 92
null 92
Impact of microwave measurement uncertainty on the Nonlinear Embedding procedure 92
A New Approach to Microwave Power Amplifier Design Based on the Experimental Characterization of the Intrinsic Electron-Device Load-line 92
On-Wafer I/V measurement setup for the characterization of low-frequency dispersion in electron devices 92
Low-frequency dynamic drain current modeling in AlGaN-GaN HEMTs 91
Scalable Equivalent Circuit FET Model for MMIC Design Identified Through FW-EM-Analyses 91
Investigation on the Thermal Behavior of Microwave GaN HEMTs 91
Waveforms-Only Based Nonlinear De-Embedding in Active Devices 91
Small-Signal Operation-Based Simplified Verification of Non-Linear Models for Millimeter-Wave Electron Devices 90
Purely analytical extraction of an improved nonlinear FinFET model including non-quasi-static effects 90
Investigation on the non-quasi-static effect implementation for millimeter-wave FET models 90
75-VDC GaN technology investigation from a degradation perspective 90
Non-linear look-up table modeling of GaAs HEMTs for mixer application 89
Totale 10.669
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Categoria #
all - tutte 38.505
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 491
Totale 38.996
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/20192.460 0 0 6 52 49 32 256 18 165 447 584 851
2019/20203.953 615 157 139 583 272 450 390 417 332 309 190 99
2020/20212.646 184 254 119 310 114 289 148 314 67 462 242 143
2021/20221.785 81 204 134 24 79 95 95 82 72 151 236 532
2022/20231.497 189 10 34 129 237 274 74 142 248 15 98 47
2023/2024277 97 150 30 0 0 0 0 0 0 0 0 0
Totale 15.290