SFERA Archivio dei prodotti della Ricerca dell'Università di Ferrara

RAFFO, Antonio
 Distribuzione geografica
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Continente #
NA - Nord America 17.284
AS - Asia 8.059
EU - Europa 3.984
SA - Sud America 1.520
Continente sconosciuto - Info sul continente non disponibili 390
AF - Africa 174
OC - Oceania 20
Totale 31.431
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Nazione #
US - Stati Uniti d'America 16.903
SG - Singapore 3.088
CN - Cina 1.898
BR - Brasile 1.198
IT - Italia 1.124
HK - Hong Kong 814
VN - Vietnam 753
UA - Ucraina 695
TR - Turchia 496
DE - Germania 436
GB - Regno Unito 391
PL - Polonia 259
SE - Svezia 243
JP - Giappone 234
FR - Francia 228
RU - Federazione Russa 198
FI - Finlandia 185
BD - Bangladesh 179
MX - Messico 161
IN - India 151
CA - Canada 142
AR - Argentina 103
ID - Indonesia 79
ZA - Sudafrica 64
IQ - Iraq 60
EC - Ecuador 57
VE - Venezuela 52
NL - Olanda 48
CO - Colombia 45
PK - Pakistan 41
ES - Italia 40
TW - Taiwan 32
UZ - Uzbekistan 31
LT - Lituania 26
MY - Malesia 26
SA - Arabia Saudita 26
MA - Marocco 25
TN - Tunisia 23
AE - Emirati Arabi Uniti 21
AT - Austria 19
PH - Filippine 19
CR - Costa Rica 18
CL - Cile 16
JO - Giordania 16
AU - Australia 15
EG - Egitto 15
JM - Giamaica 15
BE - Belgio 14
CZ - Repubblica Ceca 14
DZ - Algeria 14
NP - Nepal 14
AZ - Azerbaigian 13
KR - Corea 13
OM - Oman 12
PE - Perù 12
PY - Paraguay 12
UY - Uruguay 12
BO - Bolivia 11
KE - Kenya 11
CH - Svizzera 10
GT - Guatemala 8
AL - Albania 7
IE - Irlanda 7
IL - Israele 7
TT - Trinidad e Tobago 7
ET - Etiopia 6
HN - Honduras 6
SV - El Salvador 6
KZ - Kazakistan 5
LB - Libano 5
NZ - Nuova Zelanda 5
RO - Romania 5
RS - Serbia 5
A2 - ???statistics.table.value.countryCode.A2??? 4
BB - Barbados 4
BG - Bulgaria 4
HR - Croazia 4
NI - Nicaragua 4
PT - Portogallo 4
TH - Thailandia 4
CI - Costa d'Avorio 3
CY - Cipro 3
EU - Europa 3
GR - Grecia 3
LY - Libia 3
PA - Panama 3
SN - Senegal 3
BA - Bosnia-Erzegovina 2
DK - Danimarca 2
GE - Georgia 2
KG - Kirghizistan 2
KH - Cambogia 2
LV - Lettonia 2
MD - Moldavia 2
MM - Myanmar 2
MN - Mongolia 2
PS - Palestinian Territory 2
QA - Qatar 2
SI - Slovenia 2
SY - Repubblica araba siriana 2
Totale 31.024
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Città #
Ashburn 2.002
Fairfield 1.850
Singapore 1.781
Woodbridge 1.572
Houston 1.069
San Jose 1.003
Hong Kong 799
Jacksonville 792
Ann Arbor 691
Seattle 689
Cambridge 617
Wilmington 601
Beijing 563
Santa Clara 559
Ferrara 545
Chandler 531
Council Bluffs 512
Dallas 365
Nanjing 279
Warsaw 256
Izmir 255
Ho Chi Minh City 248
Tokyo 226
Princeton 200
Los Angeles 191
Hanoi 176
Lauterbourg 172
San Diego 138
Boardman 125
Mexico City 120
São Paulo 115
New York 95
Milan 90
Chicago 85
Shanghai 75
The Dalles 74
Nanchang 71
Dearborn 66
Hefei 65
Washington 64
Addison 61
Shenyang 61
Toronto 55
Bologna 54
San Francisco 52
London 51
Moscow 51
Tianjin 47
Hebei 46
Haiphong 43
Da Nang 39
Mountain View 39
Jiaxing 38
Orem 38
Brooklyn 36
Columbus 36
Stockholm 36
Montreal 33
Rio de Janeiro 33
Changsha 30
Jakarta 30
Rome 30
Norwalk 29
Chennai 28
Johannesburg 28
Taipei 28
Frankfurt am Main 27
Kunming 27
Manchester 27
Phoenix 27
Redwood City 27
Atlanta 26
Baghdad 26
Falkenstein 26
Belo Horizonte 25
Denver 25
Curitiba 24
Guangzhou 24
Philadelphia 24
Tashkent 24
Zhengzhou 24
Buffalo 23
Helsinki 23
Salt Lake City 23
Amsterdam 22
Boston 22
Des Moines 22
Caracas 21
Jinan 21
Auburn Hills 20
Guayaquil 20
Ankara 19
Brasília 19
Charlotte 19
Hải Dương 18
Indiana 18
Quito 18
Amman 16
Lahore 16
Ningbo 16
Totale 21.538
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Nome #
Dynamic-Bias S-Parameters: A New Measurement Technique for Microwave Transistors 378
A New Dynamic-Bias Measurement Setup for Nonlinear Transistor Model Identification 308
GaN HEMT Noise Model Based on Electromagnetic Simulations 301
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 288
A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique 240
A new approach to Class-E power amplifier design 228
Neural approach for temperature-dependent modeling of GaN HEMTs 227
A procedure for the extraction of a nonlinear microwave GaN FET model 227
Evaluation of Uncertainty in Temporal Waveforms of Microwave Transistors 224
A dual-source nonlinear measurement system oriented to the empirical characterization of low-frequency dispersion in microwave electron devices 216
Accurate GaN HEMT nonquasi-static large-signal model including dispersive effects 215
GaN HEMT noise modeling based on 50-Ω noise factor 214
A GaN power amplifier for 100 VDC bus in GPS L-band 214
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems 213
Microwave transistor modeling 212
75-VDC GaN technology investigation from a degradation perspective 212
A New Empirical Model for the Characterization of Low-Frequency Dispersive Effects in FET Electron Devices Accounting for Thermal Influence on the Trapping State 210
Extremely low-frequency measurements using an active bias tee 207
Measurement Uncertainty Propagation in Transistor Model Parameters via Polynomial Chaos Expansion 206
Experimental Investigation of LF dispersion and IMD asymmetry within GaN based HEMT technology 205
X-Band GaN Power Amplifier for Future Generation SAR Systems 205
A CLEAR-CUT UNDERSTANDING OF THE CURRENT-GAIN PEAK IN HEMTs: THEORY AND EXPERIMENTS 203
Solid-state RF power amplifiers for ISM CW applications based on 100 V GaN technology 202
A distributed approach for millimetre-wave electron device modelling 201
Behavioral Modeling of GaN FETs: a Load-Line Approach 200
Breakdown Walkout Investigation in Electron Devices Under Nonlinear Dynamic Regime 199
High-Efficiency Broadband Power Amplifier Design Technique Based on a Measured-Load-Line Approach 199
Identification of the optimum operation for GaN HEMTs in high-power amplifiers 199
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance 199
A Nonquasi-Static Empirical Model of Electron Devices 197
Linear versus nonlinear de-embedding: Experimental investigation 197
Nonlinear embedding and de-embedding techniques for large-signal fet measurements 196
Waveform engineering: State-of-the-art and future trends (invited paper) 196
Evaluation of FET performance and restrictions by low-frequency measurements 195
Kink Effect in S22 for GaN and GaAs HEMTs 195
Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design 194
GaN HEMT large-signal model accounting for both low-frequency dispersion and high-frequency non-quasi-static effects 194
Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design 192
On the evaluation of the high-frequency load line in active devices 192
Figure di Merito e Metodologia di Confronto per Modelli Non Lineari di Dispositivi Elettronici a Microonde 191
Technology-Independent Analysis of the Double Current-Gain Peak in Millimeter-Wave FETs 191
"Hybrid" Approach to microwave power amplifier design 190
Thermal characterization of high-power GaN HEMTs up to 65 GHz 190
Automated Microwave Device Characterization Set-up Based on a Technology-Independent Generalized Bias System 189
A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology 187
A New Approach to Microwave Power Amplifier Design Based on the Experimental Characterization of the Intrinsic Electron-Device Load-line 186
Millimeter-Wave FET Nonlinear Modelling Based on the Dynamic-Bias Measurement Technique 185
GaN Ku-band low-noise amplifier design including RF life test 185
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design 183
Evaluation of high-voltage transistor reliability under nonlinear dynamic operation 183
Modelling insight into the resonance frequencies of the microwave impedance parameters for GaAs HEMTs 182
Extraction of an Extrinsic Parasitic Network for Accurate mm-Wave FET Scalable Modeling on the Basis of Full-Wave EM Simulation 182
Microwave FET model identification based on vector intermodulation measurements 181
Comparison of Electron Device Models Based on Operation-specific Metrics 181
An ultra-wideband sensing board for IoT 181
Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers 181
Temperature Influence on GaN HEMT Equivalent Circuit 181
GaN HEMT model extraction based on dynamic-bias measurements 180
In-Deep Insight into the Extrinsic Capacitance Impact on GaN HEMT Modeling at Millimeter-Wave Band 179
Characterization of GaN HEMT Low-Frequency Dispersion Through a Multi-Harmonic Measurement System 178
Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements 178
Nonquasi-Static Large-Signal Model of GaN FETs through an Equivalent Voltage Approach 177
An Automated Measurement System for the Characterization of Electron Device Degradation under Nonlinear Dynamic Regime 177
Characterization of charge-trapping effects in GaN FETs through low-frequency measurements 176
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data 173
Waveforms-Based Large-Signal Identification of Transistor Models 172
Scalable nonlinear FET model based on a distributed parasitic network description 171
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design 171
Nonlinear modeling of InP devices for W-band applications 170
Empirical Investigation on Time Dispersion of Microwave Electron Device Characteristics under Nonlinear Dynamic Operating Conditions 170
Accurate Nonlinear Electron Device Modelling for Cold FET Mixer Design 170
A New Millimeter Wave Small-Signal Modeling Approach for pHEMTs Accounting for the Output Conductance Time Delay 169
Analysis of the gate current as a suitable indicator for FET degradation under nonlinear dynamic regime 169
Temperature dependent vector large-signal measurements 168
A Small-Signal Parameter-Based Metric for Nonlinear Models of Electron Devices 168
Nonlinear Deembedding of Microwave Large-Signal Measurements 168
Accurate Modeling of Electron Device I/V Characteristics Through a Simplified Large-Signal Measurement Setup 167
EM-based Modeling of Cascode FETs Suitable for MMIC Design 166
GaN power amplifier design exploiting wideband large-signal matching 165
Nonlinear model for 40-GHz cold-FET operation 165
Accurate PHEMT Nonlinear Modeling in the Presence of Low-Frequency Dispersive Effects 164
Microwave Wireless Communications: From Transistor to System Level 163
A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements 163
Workshops and short courses 162
Scalable Equivalent Circuit FET Model for MMIC Design Identified Through FW-EM-Analyses 162
On the use of the discrete-time convolution model for the compensation of non-idealities within digital acquisition channels 160
Small-Signal Operation-Based Simplified Verification of Non-Linear Models for Millimeter-Wave Electron Devices 160
GaN HEMT Nonlinear Characterization for Wideband High-Power Amplifier Design 160
On-Wafer I/V measurement setup for the characterization of low-frequency dispersion in electron devices 160
Electron Device Model Parameter Identification Through Large-Signal-Predictive Small-Signal-Based Error Functions 159
An ultra-wideband sensing board for radio frequency front-end in IoT transmitters 159
A novel technique for the extraction of nonlinear model for microwave transistors under dynamic-bias operation 158
Automated Microwave Device Characterization Set-up Based on a Technology-independent Generalized Bias System 156
Accurate EM-Based Modeling of Cascode FETs 156
Waveforms-Only Based Nonlinear De-Embedding in Active Devices 155
Low-frequency dynamic drain current modeling in AlGaN-GaN HEMTs 154
An Innovative Two-Source Large-Signal Measurement System for the Characterization of Low-Frequency Dispersive Effects in FETs 154
Low-Frequency Waveform Engineering Technique for Class-F Microwave Power Amplifier Design 153
Extended operation of class-F power amplifiers using input waveform engineering 152
An Ultra-Wideband Setup to Monitor Antenna-Impedance Variations in Low-Cost IoT Transmitters 152
Totale 18.938
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Categoria #
all - tutte 150.653
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 1.966
Totale 152.619
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.512 0 0 134 24 86 95 95 82 74 152 236 534
2022/20231.507 190 10 35 133 238 276 70 142 255 13 98 47
2023/20241.080 95 146 82 40 127 189 56 48 15 28 38 216
2024/20253.544 89 94 313 40 537 56 117 350 505 530 633 280
2025/202610.318 826 586 1.149 1.234 1.448 602 1.090 513 1.105 1.252 319 194
2026/20271.413 328 663 422 0 0 0 0 0 0 0 0 0
Totale 31.431