RAFFO, Antonio
 Distribuzione geografica
Continente #
NA - Nord America 15.723
AS - Asia 7.798
EU - Europa 3.842
SA - Sud America 1.484
AF - Africa 174
OC - Oceania 17
Continente sconosciuto - Info sul continente non disponibili 7
Totale 29.045
Nazione #
US - Stati Uniti d'America 15.426
SG - Singapore 3.021
CN - Cina 1.830
BR - Brasile 1.184
IT - Italia 1.007
HK - Hong Kong 801
VN - Vietnam 747
UA - Ucraina 694
TR - Turchia 495
DE - Germania 434
GB - Regno Unito 387
PL - Polonia 259
SE - Svezia 243
JP - Giappone 233
FR - Francia 222
RU - Federazione Russa 198
FI - Finlandia 185
MX - Messico 151
IN - India 149
CA - Canada 103
BD - Bangladesh 101
AR - Argentina 99
ID - Indonesia 74
ZA - Sudafrica 64
IQ - Iraq 59
EC - Ecuador 54
NL - Olanda 47
VE - Venezuela 47
PK - Pakistan 40
CO - Colombia 36
ES - Italia 34
TW - Taiwan 31
UZ - Uzbekistan 31
LT - Lituania 25
MA - Marocco 25
SA - Arabia Saudita 25
TN - Tunisia 23
AE - Emirati Arabi Uniti 19
AT - Austria 19
MY - Malesia 19
PH - Filippine 19
CL - Cile 16
JO - Giordania 16
AU - Australia 15
EG - Egitto 15
BE - Belgio 14
CZ - Repubblica Ceca 14
DZ - Algeria 14
AZ - Azerbaigian 13
KR - Corea 13
NP - Nepal 13
OM - Oman 12
PE - Perù 12
PY - Paraguay 12
UY - Uruguay 12
KE - Kenya 11
BO - Bolivia 10
CH - Svizzera 10
JM - Giamaica 9
CR - Costa Rica 8
AL - Albania 7
IE - Irlanda 7
ET - Etiopia 6
TT - Trinidad e Tobago 6
IL - Israele 5
KZ - Kazakistan 5
LB - Libano 5
RO - Romania 5
A2 - ???statistics.table.value.countryCode.A2??? 4
BG - Bulgaria 4
GT - Guatemala 4
HN - Honduras 4
HR - Croazia 4
RS - Serbia 4
CI - Costa d'Avorio 3
CY - Cipro 3
EU - Europa 3
LY - Libia 3
NI - Nicaragua 3
PA - Panama 3
PT - Portogallo 3
SN - Senegal 3
TH - Thailandia 3
BB - Barbados 2
DK - Danimarca 2
GR - Grecia 2
KG - Kirghizistan 2
KH - Cambogia 2
LV - Lettonia 2
MD - Moldavia 2
MN - Mongolia 2
NZ - Nuova Zelanda 2
PS - Palestinian Territory 2
SI - Slovenia 2
SY - Repubblica araba siriana 2
AO - Angola 1
BA - Bosnia-Erzegovina 1
BF - Burkina Faso 1
BH - Bahrain 1
BN - Brunei Darussalam 1
Totale 29.025
Città #
Ashburn 1.855
Fairfield 1.850
Singapore 1.758
Woodbridge 1.572
Houston 1.063
Jacksonville 792
Hong Kong 787
San Jose 759
Ann Arbor 691
Seattle 687
Cambridge 617
Wilmington 601
Ferrara 545
Beijing 534
Chandler 531
Santa Clara 488
Dallas 346
Nanjing 279
Izmir 255
Warsaw 255
Ho Chi Minh City 246
Tokyo 226
Princeton 200
Hanoi 176
Lauterbourg 172
Los Angeles 165
San Diego 131
Boardman 125
Mexico City 113
São Paulo 113
Shanghai 75
Chicago 74
The Dalles 73
Nanchang 71
Milan 66
Dearborn 65
Hefei 65
Council Bluffs 63
Addison 61
Shenyang 61
Washington 61
New York 60
London 51
Moscow 51
Bologna 50
Tianjin 47
Hebei 46
Haiphong 42
San Francisco 42
Da Nang 39
Mountain View 39
Jiaxing 38
Orem 36
Stockholm 36
Toronto 34
Columbus 33
Montreal 33
Rio de Janeiro 33
Brooklyn 31
Jakarta 30
Changsha 29
Chennai 28
Johannesburg 28
Taipei 28
Kunming 27
Manchester 27
Redwood City 27
Baghdad 26
Falkenstein 26
Frankfurt am Main 26
Norwalk 26
Atlanta 25
Belo Horizonte 25
Guangzhou 24
Tashkent 24
Zhengzhou 24
Curitiba 23
Helsinki 23
Amsterdam 22
Boston 22
Denver 22
Salt Lake City 22
Des Moines 21
Jinan 21
Auburn Hills 20
Caracas 20
Ankara 19
Charlotte 18
Hải Dương 18
Indiana 18
Quito 18
Guayaquil 17
Amman 16
Lahore 16
Ningbo 16
Philadelphia 16
Rome 16
Can Tho 15
Settimo Milanese 15
Istanbul 14
Totale 20.306
Nome #
Dynamic-Bias S-Parameters: A New Measurement Technique for Microwave Transistors 363
A New Dynamic-Bias Measurement Setup for Nonlinear Transistor Model Identification 295
GaN HEMT Noise Model Based on Electromagnetic Simulations 269
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 269
A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique 229
Neural approach for temperature-dependent modeling of GaN HEMTs 216
A procedure for the extraction of a nonlinear microwave GaN FET model 213
A new approach to Class-E power amplifier design 211
Evaluation of Uncertainty in Temporal Waveforms of Microwave Transistors 210
Accurate GaN HEMT nonquasi-static large-signal model including dispersive effects 205
A New Empirical Model for the Characterization of Low-Frequency Dispersive Effects in FET Electron Devices Accounting for Thermal Influence on the Trapping State 204
GaN HEMT noise modeling based on 50-Ω noise factor 203
A GaN power amplifier for 100 VDC bus in GPS L-band 203
Microwave transistor modeling 202
75-VDC GaN technology investigation from a degradation perspective 201
Extremely low-frequency measurements using an active bias tee 200
A CLEAR-CUT UNDERSTANDING OF THE CURRENT-GAIN PEAK IN HEMTs: THEORY AND EXPERIMENTS 199
A dual-source nonlinear measurement system oriented to the empirical characterization of low-frequency dispersion in microwave electron devices 199
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance 198
Solid-state RF power amplifiers for ISM CW applications based on 100 V GaN technology 198
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems 197
A distributed approach for millimetre-wave electron device modelling 196
Measurement Uncertainty Propagation in Transistor Model Parameters via Polynomial Chaos Expansion 195
Experimental Investigation of LF dispersion and IMD asymmetry within GaN based HEMT technology 194
Identification of the optimum operation for GaN HEMTs in high-power amplifiers 193
X-Band GaN Power Amplifier for Future Generation SAR Systems 190
A Nonquasi-Static Empirical Model of Electron Devices 189
Linear versus nonlinear de-embedding: Experimental investigation 189
Behavioral Modeling of GaN FETs: a Load-Line Approach 187
High-Efficiency Broadband Power Amplifier Design Technique Based on a Measured-Load-Line Approach 187
GaN HEMT large-signal model accounting for both low-frequency dispersion and high-frequency non-quasi-static effects 187
Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design 186
Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design 186
Nonlinear embedding and de-embedding techniques for large-signal fet measurements 186
Waveform engineering: State-of-the-art and future trends (invited paper) 184
Automated Microwave Device Characterization Set-up Based on a Technology-Independent Generalized Bias System 183
Breakdown Walkout Investigation in Electron Devices Under Nonlinear Dynamic Regime 183
On the evaluation of the high-frequency load line in active devices 183
"Hybrid" Approach to microwave power amplifier design 182
Evaluation of FET performance and restrictions by low-frequency measurements 181
A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology 181
A New Approach to Microwave Power Amplifier Design Based on the Experimental Characterization of the Intrinsic Electron-Device Load-line 180
Technology-Independent Analysis of the Double Current-Gain Peak in Millimeter-Wave FETs 179
Millimeter-Wave FET Nonlinear Modelling Based on the Dynamic-Bias Measurement Technique 178
GaN Ku-band low-noise amplifier design including RF life test 178
Modelling insight into the resonance frequencies of the microwave impedance parameters for GaAs HEMTs 176
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design 176
Extraction of an Extrinsic Parasitic Network for Accurate mm-Wave FET Scalable Modeling on the Basis of Full-Wave EM Simulation 176
Kink Effect in S22 for GaN and GaAs HEMTs 175
Evaluation of high-voltage transistor reliability under nonlinear dynamic operation 175
GaN HEMT model extraction based on dynamic-bias measurements 174
Characterization of GaN HEMT Low-Frequency Dispersion Through a Multi-Harmonic Measurement System 173
Comparison of Electron Device Models Based on Operation-specific Metrics 173
An ultra-wideband sensing board for IoT 173
Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers 172
Nonquasi-Static Large-Signal Model of GaN FETs through an Equivalent Voltage Approach 171
Thermal characterization of high-power GaN HEMTs up to 65 GHz 171
In-Deep Insight into the Extrinsic Capacitance Impact on GaN HEMT Modeling at Millimeter-Wave Band 170
Characterization of charge-trapping effects in GaN FETs through low-frequency measurements 169
An Automated Measurement System for the Characterization of Electron Device Degradation under Nonlinear Dynamic Regime 168
Waveforms-Based Large-Signal Identification of Transistor Models 167
Temperature Influence on GaN HEMT Equivalent Circuit 167
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design 166
Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements 166
Analysis of the gate current as a suitable indicator for FET degradation under nonlinear dynamic regime 165
A New Millimeter Wave Small-Signal Modeling Approach for pHEMTs Accounting for the Output Conductance Time Delay 164
Scalable nonlinear FET model based on a distributed parasitic network description 164
A Small-Signal Parameter-Based Metric for Nonlinear Models of Electron Devices 164
Empirical Investigation on Time Dispersion of Microwave Electron Device Characteristics under Nonlinear Dynamic Operating Conditions 163
Accurate Nonlinear Electron Device Modelling for Cold FET Mixer Design 163
Nonlinear Deembedding of Microwave Large-Signal Measurements 163
Accurate Modeling of Electron Device I/V Characteristics Through a Simplified Large-Signal Measurement Setup 162
Nonlinear modeling of InP devices for W-band applications 162
Temperature dependent vector large-signal measurements 161
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data 161
Microwave FET model identification based on vector intermodulation measurements 160
EM-based Modeling of Cascode FETs Suitable for MMIC Design 158
Nonlinear model for 40-GHz cold-FET operation 158
Microwave Wireless Communications: From Transistor to System Level 158
GaN power amplifier design exploiting wideband large-signal matching 157
On the use of the discrete-time convolution model for the compensation of non-idealities within digital acquisition channels 155
Workshops and short courses 155
Electron Device Model Parameter Identification Through Large-Signal-Predictive Small-Signal-Based Error Functions 154
Accurate PHEMT Nonlinear Modeling in the Presence of Low-Frequency Dispersive Effects 154
Scalable Equivalent Circuit FET Model for MMIC Design Identified Through FW-EM-Analyses 153
A novel technique for the extraction of nonlinear model for microwave transistors under dynamic-bias operation 152
An ultra-wideband sensing board for radio frequency front-end in IoT transmitters 152
Accurate EM-Based Modeling of Cascode FETs 152
On-Wafer I/V measurement setup for the characterization of low-frequency dispersion in electron devices 152
Automated Microwave Device Characterization Set-up Based on a Technology-independent Generalized Bias System 151
Small-Signal Operation-Based Simplified Verification of Non-Linear Models for Millimeter-Wave Electron Devices 151
Low-frequency dynamic drain current modeling in AlGaN-GaN HEMTs 149
Investigation on the Thermal Behavior of Microwave GaN HEMTs 146
An Ultra-Wideband Setup to Monitor Antenna-Impedance Variations in Low-Cost IoT Transmitters 146
Low-Frequency Waveform Engineering Technique for Class-F Microwave Power Amplifier Design 145
Figure di Merito e Metodologia di Confronto per Modelli Non Lineari di Dispositivi Elettronici a Microonde 145
GaN HEMT Nonlinear Characterization for Wideband High-Power Amplifier Design 145
A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements 145
Waveforms-Only Based Nonlinear De-Embedding in Active Devices 145
An Innovative Two-Source Large-Signal Measurement System for the Characterization of Low-Frequency Dispersive Effects in FETs 143
Totale 17.972
Categoria #
all - tutte 131.841
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 1.732
Totale 133.573


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021851 0 0 0 0 0 0 0 0 0 464 242 145
2021/20221.797 81 204 134 24 86 95 95 82 74 152 236 534
2022/20231.507 190 10 35 133 238 276 70 142 255 13 98 47
2023/20241.080 95 146 82 40 127 189 56 48 15 28 38 216
2024/20253.544 89 94 313 40 537 56 117 350 505 530 633 280
2025/20269.723 826 586 1.149 1.234 1.448 602 1.090 513 1.105 1.170 0 0
Totale 29.423