RAFFO, Antonio
 Distribuzione geografica
Continente #
NA - Nord America 14.222
AS - Asia 5.953
EU - Europa 3.459
SA - Sud America 1.248
AF - Africa 105
OC - Oceania 11
Continente sconosciuto - Info sul continente non disponibili 7
Totale 25.005
Nazione #
US - Stati Uniti d'America 13.964
SG - Singapore 2.557
CN - Cina 1.563
BR - Brasile 1.067
IT - Italia 956
HK - Hong Kong 734
UA - Ucraina 686
TR - Turchia 464
DE - Germania 406
GB - Regno Unito 363
VN - Vietnam 282
PL - Polonia 253
SE - Svezia 241
RU - Federazione Russa 191
FI - Finlandia 175
MX - Messico 139
CA - Canada 88
AR - Argentina 64
IN - India 55
BD - Bangladesh 51
ID - Indonesia 50
ZA - Sudafrica 49
NL - Olanda 36
EC - Ecuador 35
JP - Giappone 34
IQ - Iraq 31
ES - Italia 26
FR - Francia 25
LT - Lituania 24
CO - Colombia 19
TW - Taiwan 19
VE - Venezuela 19
UZ - Uzbekistan 16
AT - Austria 15
PK - Pakistan 14
BE - Belgio 12
CZ - Repubblica Ceca 12
MA - Marocco 12
CL - Cile 11
JO - Giordania 11
KR - Corea 11
PY - Paraguay 11
AE - Emirati Arabi Uniti 10
AU - Australia 10
EG - Egitto 10
UY - Uruguay 10
AZ - Azerbaigian 9
CH - Svizzera 9
DZ - Algeria 9
SA - Arabia Saudita 9
JM - Giamaica 7
KE - Kenya 7
OM - Oman 7
PE - Perù 7
TN - Tunisia 7
RO - Romania 5
TT - Trinidad e Tobago 5
A2 - ???statistics.table.value.countryCode.A2??? 4
AL - Albania 4
BG - Bulgaria 4
BO - Bolivia 4
CR - Costa Rica 4
IL - Israele 4
NP - Nepal 4
EU - Europa 3
HN - Honduras 3
LB - Libano 3
MY - Malesia 3
PA - Panama 3
SN - Senegal 3
CI - Costa d'Avorio 2
CY - Cipro 2
ET - Etiopia 2
GR - Grecia 2
GT - Guatemala 2
HR - Croazia 2
IE - Irlanda 2
KZ - Kazakistan 2
LY - Libia 2
MD - Moldavia 2
NI - Nicaragua 2
PS - Palestinian Territory 2
BA - Bosnia-Erzegovina 1
BB - Barbados 1
BN - Brunei Darussalam 1
DM - Dominica 1
DO - Repubblica Dominicana 1
GA - Gabon 1
GE - Georgia 1
KG - Kirghizistan 1
KH - Cambogia 1
LV - Lettonia 1
MK - Macedonia 1
MN - Mongolia 1
NO - Norvegia 1
NZ - Nuova Zelanda 1
PT - Portogallo 1
QA - Qatar 1
RS - Serbia 1
SI - Slovenia 1
Totale 25.000
Città #
Fairfield 1.850
Woodbridge 1.572
Singapore 1.413
Ashburn 1.408
Houston 1.062
Jacksonville 792
Hong Kong 728
Ann Arbor 691
Seattle 687
Cambridge 617
Wilmington 601
Ferrara 542
Chandler 531
Beijing 490
Santa Clara 466
Dallas 341
Nanjing 279
Izmir 252
Warsaw 252
Princeton 200
Los Angeles 156
San Diego 131
Boardman 125
Mexico City 109
Ho Chi Minh City 103
São Paulo 101
Nanchang 71
Shanghai 71
Chicago 69
Dearborn 65
Hefei 65
Hanoi 64
Milan 62
Addison 61
Shenyang 61
The Dalles 57
New York 53
Washington 52
Moscow 51
Bologna 48
London 48
Hebei 46
Tianjin 46
Mountain View 39
Jiaxing 38
San Francisco 38
Stockholm 34
Columbus 33
Council Bluffs 32
Brooklyn 31
Toronto 31
Rio de Janeiro 30
Jakarta 28
Montreal 28
Tokyo 28
Changsha 27
Kunming 27
Redwood City 27
Falkenstein 26
Norwalk 26
Johannesburg 25
Belo Horizonte 23
Boston 22
Curitiba 22
Manchester 22
Zhengzhou 22
Chennai 21
Denver 21
Des Moines 21
Jinan 21
Orem 21
Atlanta 20
Auburn Hills 20
Guangzhou 20
Amsterdam 18
Indiana 18
Salt Lake City 18
Taipei 18
Ankara 16
Charlotte 16
Ningbo 16
Philadelphia 16
Rome 16
Settimo Milanese 15
Haiphong 14
Orange 14
Ribeirão Preto 14
San Mateo 14
Falls Church 13
Helsinki 13
Phoenix 13
Brasília 12
Tashkent 12
Amman 11
Brussels 11
Campinas 11
Guayaquil 11
Lanzhou 11
Munich 11
Salvador 11
Totale 17.676
Nome #
Dynamic-Bias S-Parameters: A New Measurement Technique for Microwave Transistors 336
A New Dynamic-Bias Measurement Setup for Nonlinear Transistor Model Identification 257
GaN HEMT Noise Model Based on Electromagnetic Simulations 233
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 229
A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique 203
Neural approach for temperature-dependent modeling of GaN HEMTs 195
A procedure for the extraction of a nonlinear microwave GaN FET model 186
Extremely low-frequency measurements using an active bias tee 185
Evaluation of Uncertainty in Temporal Waveforms of Microwave Transistors 185
Solid-state RF power amplifiers for ISM CW applications based on 100 V GaN technology 181
GaN HEMT noise modeling based on 50-Ω noise factor 180
A New Empirical Model for the Characterization of Low-Frequency Dispersive Effects in FET Electron Devices Accounting for Thermal Influence on the Trapping State 178
Experimental Investigation of LF dispersion and IMD asymmetry within GaN based HEMT technology 177
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance 177
Microwave transistor modeling 176
A new approach to Class-E power amplifier design 175
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems 175
Measurement Uncertainty Propagation in Transistor Model Parameters via Polynomial Chaos Expansion 173
X-Band GaN Power Amplifier for Future Generation SAR Systems 172
Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design 171
Behavioral Modeling of GaN FETs: a Load-Line Approach 171
A dual-source nonlinear measurement system oriented to the empirical characterization of low-frequency dispersion in microwave electron devices 171
Nonlinear embedding and de-embedding techniques for large-signal fet measurements 171
Accurate GaN HEMT nonquasi-static large-signal model including dispersive effects 170
A CLEAR-CUT UNDERSTANDING OF THE CURRENT-GAIN PEAK IN HEMTs: THEORY AND EXPERIMENTS 170
Identification of the optimum operation for GaN HEMTs in high-power amplifiers 169
A GaN power amplifier for 100 VDC bus in GPS L-band 169
Linear versus nonlinear de-embedding: Experimental investigation 167
Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design 166
Evaluation of FET performance and restrictions by low-frequency measurements 166
High-Efficiency Broadband Power Amplifier Design Technique Based on a Measured-Load-Line Approach 164
Technology-Independent Analysis of the Double Current-Gain Peak in Millimeter-Wave FETs 164
75-VDC GaN technology investigation from a degradation perspective 163
"Hybrid" Approach to microwave power amplifier design 162
Evaluation of high-voltage transistor reliability under nonlinear dynamic operation 162
GaN HEMT large-signal model accounting for both low-frequency dispersion and high-frequency non-quasi-static effects 162
On the evaluation of the high-frequency load line in active devices 161
Waveform engineering: State-of-the-art and future trends (invited paper) 161
GaN HEMT model extraction based on dynamic-bias measurements 161
A New Approach to Microwave Power Amplifier Design Based on the Experimental Characterization of the Intrinsic Electron-Device Load-line 161
A Nonquasi-Static Empirical Model of Electron Devices 160
Breakdown Walkout Investigation in Electron Devices Under Nonlinear Dynamic Regime 160
Millimeter-Wave FET Nonlinear Modelling Based on the Dynamic-Bias Measurement Technique 160
Modelling insight into the resonance frequencies of the microwave impedance parameters for GaAs HEMTs 160
A distributed approach for millimetre-wave electron device modelling 159
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design 158
A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology 156
Nonquasi-Static Large-Signal Model of GaN FETs through an Equivalent Voltage Approach 155
Waveforms-Based Large-Signal Identification of Transistor Models 155
Automated Microwave Device Characterization Set-up Based on a Technology-Independent Generalized Bias System 153
Characterization of GaN HEMT Low-Frequency Dispersion Through a Multi-Harmonic Measurement System 153
Characterization of charge-trapping effects in GaN FETs through low-frequency measurements 153
GaN Ku-band low-noise amplifier design including RF life test 153
An ultra-wideband sensing board for IoT 152
Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements 152
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design 151
Thermal characterization of high-power GaN HEMTs up to 65 GHz 151
A Small-Signal Parameter-Based Metric for Nonlinear Models of Electron Devices 150
Temperature Influence on GaN HEMT Equivalent Circuit 150
Accurate Modeling of Electron Device I/V Characteristics Through a Simplified Large-Signal Measurement Setup 148
In-Deep Insight into the Extrinsic Capacitance Impact on GaN HEMT Modeling at Millimeter-Wave Band 148
Comparison of Electron Device Models Based on Operation-specific Metrics 147
Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers 147
Nonlinear Deembedding of Microwave Large-Signal Measurements 147
Scalable nonlinear FET model based on a distributed parasitic network description 146
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data 146
A New Millimeter Wave Small-Signal Modeling Approach for pHEMTs Accounting for the Output Conductance Time Delay 145
An Automated Measurement System for the Characterization of Electron Device Degradation under Nonlinear Dynamic Regime 145
Kink Effect in S22 for GaN and GaAs HEMTs 145
Accurate Nonlinear Electron Device Modelling for Cold FET Mixer Design 145
Extraction of an Extrinsic Parasitic Network for Accurate mm-Wave FET Scalable Modeling on the Basis of Full-Wave EM Simulation 145
Electron Device Model Parameter Identification Through Large-Signal-Predictive Small-Signal-Based Error Functions 144
Microwave FET model identification based on vector intermodulation measurements 144
Nonlinear modeling of InP devices for W-band applications 144
EM-based Modeling of Cascode FETs Suitable for MMIC Design 143
GaN power amplifier design exploiting wideband large-signal matching 143
Small-Signal Operation-Based Simplified Verification of Non-Linear Models for Millimeter-Wave Electron Devices 141
Nonlinear model for 40-GHz cold-FET operation 141
Empirical Investigation on Time Dispersion of Microwave Electron Device Characteristics under Nonlinear Dynamic Operating Conditions 141
Accurate EM-Based Modeling of Cascode FETs 140
Analysis of the gate current as a suitable indicator for FET degradation under nonlinear dynamic regime 139
Workshops and short courses 138
Temperature dependent vector large-signal measurements 137
Automated Microwave Device Characterization Set-up Based on a Technology-independent Generalized Bias System 136
On-Wafer I/V measurement setup for the characterization of low-frequency dispersion in electron devices 136
Accurate PHEMT Nonlinear Modeling in the Presence of Low-Frequency Dispersive Effects 135
A novel technique for the extraction of nonlinear model for microwave transistors under dynamic-bias operation 135
On the use of the discrete-time convolution model for the compensation of non-idealities within digital acquisition channels 134
An Ultra-Wideband Setup to Monitor Antenna-Impedance Variations in Low-Cost IoT Transmitters 134
Non-linear look-up table modeling of GaAs HEMTs for mixer application 132
Improvement of PHEMT Intermodulation Prediction Through the Accurate Modelling of Low-Frequency Dispersion Effects 130
Investigation on the Thermal Behavior of Microwave GaN HEMTs 130
Microwave Wireless Communications: From Transistor to System Level 130
Waveforms-Only Based Nonlinear De-Embedding in Active Devices 129
Low-frequency dynamic drain current modeling in AlGaN-GaN HEMTs 128
Scalable Equivalent Circuit FET Model for MMIC Design Identified Through FW-EM-Analyses 128
An ultra-wideband sensing board for radio frequency front-end in IoT transmitters 128
Low-Frequency Waveform Engineering Technique for Class-F Microwave Power Amplifier Design 126
Small- Versus Large-Signal Extraction of Charge Models of Microwave FETs 126
Extended operation of class-F power amplifiers using input waveform engineering 126
Totale 15.868
Categoria #
all - tutte 123.836
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 1.613
Totale 125.449


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.671 0 0 0 0 0 289 148 316 67 464 242 145
2021/20221.797 81 204 134 24 86 95 95 82 74 152 236 534
2022/20231.507 190 10 35 133 238 276 70 142 255 13 98 47
2023/20241.080 95 146 82 40 127 189 56 48 15 28 38 216
2024/20253.544 89 94 313 40 537 56 117 350 505 530 633 280
2025/20265.680 826 586 1.149 1.234 1.448 437 0 0 0 0 0 0
Totale 25.380