RAFFO, Antonio
 Distribuzione geografica
Continente #
NA - Nord America 10711
EU - Europa 2528
AS - Asia 1363
Continente sconosciuto - Info sul continente non disponibili 7
OC - Oceania 7
SA - Sud America 3
Totale 14619
Nazione #
US - Stati Uniti d'America 10702
CN - Cina 898
IT - Italia 727
UA - Ucraina 647
TR - Turchia 440
DE - Germania 317
GB - Regno Unito 224
PL - Polonia 210
SE - Svezia 206
FI - Finlandia 149
FR - Francia 12
BE - Belgio 11
TW - Taiwan 10
AU - Australia 7
CA - Canada 6
KR - Corea 5
A2 - ???statistics.table.value.countryCode.A2??? 4
CZ - Repubblica Ceca 4
NL - Olanda 4
RO - Romania 4
AT - Austria 3
CH - Svizzera 3
EU - Europa 3
MX - Messico 3
VN - Vietnam 3
AR - Argentina 2
BD - Bangladesh 2
BG - Bulgaria 2
IN - India 2
MD - Moldavia 2
BR - Brasile 1
GR - Grecia 1
HK - Hong Kong 1
JP - Giappone 1
MY - Malesia 1
RU - Federazione Russa 1
SI - Slovenia 1
Totale 14619
Città #
Fairfield 1850
Woodbridge 1572
Houston 1053
Jacksonville 790
Ashburn 763
Ann Arbor 691
Seattle 674
Cambridge 617
Wilmington 596
Chandler 531
Ferrara 483
Nanjing 278
Izmir 252
Warsaw 210
Princeton 200
Beijing 191
San Diego 131
Boardman 117
Nanchang 70
Dearborn 65
Addison 61
Shenyang 59
Hebei 46
Milan 46
Mountain View 39
Tianjin 39
Jiaxing 38
Redwood City 27
Changsha 26
Kunming 26
Norwalk 26
Bologna 21
Des Moines 21
Zhengzhou 21
Auburn Hills 20
Jinan 20
Indiana 18
Philadelphia 18
Ningbo 16
Settimo Milanese 15
Orange 14
San Mateo 14
Falls Church 13
London 12
Los Angeles 12
Lanzhou 11
Brussels 10
Taipei 10
Chicago 9
Guangzhou 8
Haikou 8
Redmond 8
Verona 8
New York 7
Berlin 6
Shanghai 6
Taizhou 6
Ferrara di Monte Baldo 5
Hangzhou 5
Toronto 5
Changchun 4
Helsinki 4
Andover 3
Cottbus 3
Hefei 3
San Francisco 3
Taiyuan 3
Torino 3
Vancouver 3
Vicenza 3
Vienna 3
Aci Catena 2
Amsterdam 2
Chengdu 2
Chisinau 2
Dong Ket 2
Fuzhou 2
Garbagnate Milanese 2
Gavirate 2
Lucca 2
Modena 2
Naples 2
New Orleans 2
Rende 2
Rome 2
Saint Paul 2
Walnut 2
Yellow Springs 2
Zurich 2
Aachen 1
Atlanta 1
Baotou 1
Bremen 1
Brentford 1
Brno 1
Buenos Aires 1
Canberra 1
Cinisello Balsamo 1
Cittadella 1
Clearwater 1
Totale 11996
Nome #
Dynamic-Bias S-Parameters: A New Measurement Technique for Microwave Transistors 262
A New Dynamic-Bias Measurement Setup for Nonlinear Transistor Model Identification 171
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 160
GaN HEMT Noise Model Based on Electromagnetic Simulations 157
Neural approach for temperature-dependent modeling of GaN HEMTs 149
Evaluation of Uncertainty in Temporal Waveforms of Microwave Transistors 137
Measurement Uncertainty Propagation in Transistor Model Parameters via Polynomial Chaos Expansion 136
A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique 130
NONLINEAR EMBEDDING AND DE-EMBEDDING TECHNIQUES FOR LARGE-SIGNAL FET MEASUREMENTS 121
Extremely Low-Frequency Measurements Using an Active Bias Tee 120
A procedure for the extraction of a nonlinear microwave GaN FET model 120
Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design 119
Millimeter-Wave FET Nonlinear Modelling Based on the Dynamic-Bias Measurement Technique 117
GaN HEMT noise modeling based on 50-Ω noise factor 117
Experimental Investigation of LF dispersion and IMD asymmetry within GaN based HEMT technology 115
Microwave transistor modeling 115
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance 114
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems 114
Technology-Independent Analysis of the Double Current-Gain Peak in Millimeter-Wave FETs 113
X-Band GaN Power Amplifier for Future Generation SAR Systems 112
Modelling insight into the resonance frequencies of the microwave impedance parameters for GaAs HEMTs 111
null 110
Temperature Influence on GaN HEMT Equivalent Circuit 110
Behavioral Modeling of GaN FETs: a Load-Line Approach 109
null 108
A Nonquasi-Static Empirical Model of Electron Devices 107
Breakdown Walkout Investigation in Electron Devices Under Nonlinear Dynamic Regime 107
Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design 106
GaN HEMT model extraction based on dynamic-bias measurements 106
High-Efficiency Broadband Power Amplifier Design Technique Based on a Measured-Load-Line Approach 104
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design 104
A New Millimeter Wave Small-Signal Modeling Approach for pHEMTs Accounting for the Output Conductance Time Delay 103
Automated Microwave Device Characterization Set-up Based on a Technology-Independent Generalized Bias System 103
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data 103
A new approach to Class-E power amplifier design 102
GaN Ku-band low-noise amplifier design including RF life test 102
Accurate Nonlinear Electron Device Modelling for Cold FET Mixer Design 102
null 102
GaN HEMT large-signal model accounting for both low-frequency dispersion and high-frequency non-quasi-static effects 102
EM-based Modeling of Cascode FETs Suitable for MMIC Design 101
Accurate GaN HEMT nonquasi-static large-signal model including dispersive effects 101
A CLEAR-CUT UNDERSTANDING OF THE CURRENT-GAIN PEAK IN HEMTs: THEORY AND EXPERIMENTS 101
A Small-Signal Parameter-Based Metric for Nonlinear Models of Electron Devices 101
A dual-source nonlinear measurement system oriented to the empirical characterization of low-frequency dispersion in microwave electron devices 101
A New Empirical Model for the Characterization of Low-Frequency Dispersive Effects in FET Electron Devices Accounting for Thermal Influence on the Trapping State 101
A GaN power amplifier for 100 VDC bus in GPS L-band 101
Scalable nonlinear FET model based on a distributed parasitic network description 100
null 100
Linear versus nonlinear de-embedding: Experimental investigation 100
null 100
Nonquasi-Static Large-Signal Model of GaN FETs through an Equivalent Voltage Approach 99
Identification of the optimum operation for GaN HEMTs in high-power amplifiers 99
In-Deep Insight into the Extrinsic Capacitance Impact on GaN HEMT Modeling at Millimeter-Wave Band 99
Kink Effect in S22 for GaN and GaAs HEMTs 99
Electron Device Model Parameter Identification Through Large-Signal-Predictive Small-Signal-Based Error Functions 98
On the use of the discrete-time convolution model for the compensation of non-idealities within digital acquisition channels 98
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design 98
An ultra-wideband sensing board for IoT 98
null 97
“Hybrid” Approach to Microwave Power Amplifier Design 96
Waveform engineering: State-of-the-art and future trends (invited paper) 96
Automated Microwave Device Characterization Set-up Based on a Technology-independent Generalized Bias System 95
An Automated Measurement System for the Characterization of Electron Device Degradation under Nonlinear Dynamic Regime 95
Temperature dependent vector large-signal measurements 95
A distributed approach for millimetre-wave electron device modelling 94
GaN power amplifier design exploiting wideband large-signal matching 94
Workshops and short courses 94
Nonlinear modeling of InP devices for W-band applications 94
Nonlinear model for 40-GHz cold-FET operation 94
Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements 94
Nonlinear Deembedding of Microwave Large-Signal Measurements 94
A novel technique for the extraction of nonlinear model for microwave transistors under dynamic-bias operation 94
A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology 94
Accurate EM-Based Modeling of Cascode FETs 94
Microwave FET model identification based on vector intermodulation measurements 93
Evaluation of FET performance and restrictions by low-frequency measurements 93
Empirical Investigation on Time Dispersion of Microwave Electron Device Characteristics under Nonlinear Dynamic Operating Conditions 93
null 92
Evaluation of high-voltage transistor reliability under nonlinear dynamic operation 92
Accurate Modeling of Electron Device I/V Characteristics Through a Simplified Large-Signal Measurement Setup 91
Characterization of GaN HEMT Low-Frequency Dispersion Through a Multi-Harmonic Measurement System 91
On the evaluation of the high-frequency load line in active devices 91
Small- Versus Large-Signal Extraction of Charge Models of Microwave FETs 91
Characterization of charge-trapping effects in GaN FETs through low-frequency measurements 91
Solid-state RF power amplifiers for ISM CW applications based on 100 V GaN technology 91
Impact of microwave measurement uncertainty on the Nonlinear Embedding procedure 91
On-Wafer I/V measurement setup for the characterization of low-frequency dispersion in electron devices 91
Extraction of an Extrinsic Parasitic Network for Accurate mm-Wave FET Scalable Modeling on the Basis of Full-Wave EM Simulation 90
Small-Signal Operation-Based Simplified Verification of Non-Linear Models for Millimeter-Wave Electron Devices 89
Purely analytical extraction of an improved nonlinear FinFET model including non-quasi-static effects 89
Accurate PHEMT Nonlinear Modeling in the Presence of Low-Frequency Dispersive Effects 89
Investigation on the Thermal Behavior of Microwave GaN HEMTs 89
Thermal characterization of high-power GaN HEMTs up to 65 GHz 89
A New Approach to Microwave Power Amplifier Design Based on the Experimental Characterization of the Intrinsic Electron-Device Load-line 89
Low-frequency dynamic drain current modeling in AlGaN-GaN HEMTs 88
Scalable Equivalent Circuit FET Model for MMIC Design Identified Through FW-EM-Analyses 88
Investigation on the non-quasi-static effect implementation for millimeter-wave FET models 87
Waveforms-Based Large-Signal Identification of Transistor Models 87
Non-linear look-up table modeling of GaAs HEMTs for mixer application 87
Comparison of Electron Device Models Based on Operation-specific Metrics 87
Totale 10448
Categoria #
all - tutte 27616
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 351
Totale 27967


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2017/201890 0000 00 00 2648151
2018/20192484 186652 4932 25618 165447584851
2019/20203981 615157139583 277454 395421 338311190101
2020/20212659 184258119310 117289 148316 67464242145
2021/20221797 8120413424 8695 9582 74152236534
2022/20231334 1901035133 238276 75144 233000
Totale 14903