SFERA Archivio dei prodotti della Ricerca dell'Università di Ferrara

RAFFO, Antonio
 Distribuzione geografica
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Continente #
NA - Nord America 12.187
EU - Europa 2.782
AS - Asia 1.866
SA - Sud America 12
OC - Oceania 10
Continente sconosciuto - Info sul continente non disponibili 7
AF - Africa 6
Totale 16.870
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Nazione #
US - Stati Uniti d'America 12.152
CN - Cina 987
IT - Italia 863
UA - Ucraina 649
TR - Turchia 441
SG - Singapore 366
DE - Germania 336
GB - Regno Unito 276
PL - Polonia 210
SE - Svezia 208
FI - Finlandia 163
CA - Canada 31
ID - Indonesia 27
FR - Francia 15
BE - Belgio 12
LT - Lituania 12
KR - Corea 11
AU - Australia 10
HK - Hong Kong 10
TW - Taiwan 10
BR - Brasile 9
NL - Olanda 9
CZ - Repubblica Ceca 5
A2 - ???statistics.table.value.countryCode.A2??? 4
IN - India 4
MX - Messico 4
RO - Romania 4
AT - Austria 3
BG - Bulgaria 3
CH - Svizzera 3
EU - Europa 3
JP - Giappone 3
VN - Vietnam 3
AR - Argentina 2
BD - Bangladesh 2
DZ - Algeria 2
IE - Irlanda 2
LY - Libia 2
MA - Marocco 2
MD - Moldavia 2
RU - Federazione Russa 2
EC - Ecuador 1
GR - Grecia 1
HR - Croazia 1
MY - Malesia 1
PK - Pakistan 1
PT - Portogallo 1
RS - Serbia 1
SI - Slovenia 1
Totale 16.870
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Città #
Fairfield 1.850
Woodbridge 1.572
Ashburn 1.086
Houston 1.054
Jacksonville 790
Ann Arbor 691
Seattle 674
Cambridge 617
Wilmington 596
Chandler 531
Ferrara 526
Santa Clara 436
Nanjing 278
Izmir 252
Singapore 240
Warsaw 210
Princeton 200
Beijing 195
San Diego 131
Boardman 125
Nanchang 70
Shanghai 66
Dearborn 65
Addison 61
Los Angeles 61
Shenyang 61
Milan 52
Washington 48
Hebei 46
Mountain View 39
Tianjin 39
Jiaxing 38
Bologna 36
London 33
Jakarta 27
Redwood City 27
Changsha 26
Kunming 26
Norwalk 26
Des Moines 21
Toronto 21
Zhengzhou 21
Auburn Hills 20
Jinan 20
Indiana 18
Ningbo 16
Philadelphia 15
Settimo Milanese 15
Orange 14
San Mateo 14
Falls Church 13
Helsinki 12
Brussels 11
Guangzhou 11
Lanzhou 11
Ferrara di Monte Baldo 10
Taipei 10
Tappahannock 10
Frankfurt am Main 9
Hong Kong 9
Rome 9
Chicago 8
Haikou 8
Ottawa 8
Redmond 8
Verona 8
Bremen 7
Council Bluffs 7
New York 7
Berlin 6
Kilburn 6
Lappeenranta 6
Parma 6
Taizhou 6
Amsterdam 5
Hangzhou 5
Changchun 4
Hounslow 4
Prescot 4
Vicenza 4
Andover 3
Castel Maggiore 3
Cottbus 3
Fuzhou 3
Hefei 3
Massapequa 3
Messina 3
Naples 3
New Bedfont 3
New Orleans 3
San Francisco 3
Taiyuan 3
Torino 3
Vancouver 3
Vienna 3
Aci Catena 2
Arco 2
Bra 2
Cassino 2
Chengdu 2
Totale 13.383
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Nome #
Dynamic-Bias S-Parameters: A New Measurement Technique for Microwave Transistors 287
A New Dynamic-Bias Measurement Setup for Nonlinear Transistor Model Identification 184
GaN HEMT Noise Model Based on Electromagnetic Simulations 176
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 171
Neural approach for temperature-dependent modeling of GaN HEMTs 165
Evaluation of Uncertainty in Temporal Waveforms of Microwave Transistors 148
A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique 148
Measurement Uncertainty Propagation in Transistor Model Parameters via Polynomial Chaos Expansion 147
Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design 139
A procedure for the extraction of a nonlinear microwave GaN FET model 135
Microwave transistor modeling 133
Extremely Low-Frequency Measurements Using an Active Bias Tee 132
NONLINEAR EMBEDDING AND DE-EMBEDDING TECHNIQUES FOR LARGE-SIGNAL FET MEASUREMENTS 130
Millimeter-Wave FET Nonlinear Modelling Based on the Dynamic-Bias Measurement Technique 129
GaN HEMT noise modeling based on 50-Ω noise factor 129
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance 128
Nonquasi-Static Large-Signal Model of GaN FETs through an Equivalent Voltage Approach 127
Experimental Investigation of LF dispersion and IMD asymmetry within GaN based HEMT technology 127
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems 127
Modelling insight into the resonance frequencies of the microwave impedance parameters for GaAs HEMTs 126
Behavioral Modeling of GaN FETs: a Load-Line Approach 125
X-Band GaN Power Amplifier for Future Generation SAR Systems 122
Temperature Influence on GaN HEMT Equivalent Circuit 122
Technology-Independent Analysis of the Double Current-Gain Peak in Millimeter-Wave FETs 122
Solid-state RF power amplifiers for ISM CW applications based on 100 V GaN technology 121
GaN HEMT model extraction based on dynamic-bias measurements 120
Breakdown Walkout Investigation in Electron Devices Under Nonlinear Dynamic Regime 119
Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design 119
A New Empirical Model for the Characterization of Low-Frequency Dispersive Effects in FET Electron Devices Accounting for Thermal Influence on the Trapping State 119
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design 119
A new approach to Class-E power amplifier design 117
GaN HEMT large-signal model accounting for both low-frequency dispersion and high-frequency non-quasi-static effects 117
A Nonquasi-Static Empirical Model of Electron Devices 115
Linear versus nonlinear de-embedding: Experimental investigation 115
High-Efficiency Broadband Power Amplifier Design Technique Based on a Measured-Load-Line Approach 115
In-Deep Insight into the Extrinsic Capacitance Impact on GaN HEMT Modeling at Millimeter-Wave Band 115
Waveform engineering: State-of-the-art and future trends (invited paper) 115
Accurate GaN HEMT nonquasi-static large-signal model including dispersive effects 114
A dual-source nonlinear measurement system oriented to the empirical characterization of low-frequency dispersion in microwave electron devices 114
EM-based Modeling of Cascode FETs Suitable for MMIC Design 113
A CLEAR-CUT UNDERSTANDING OF THE CURRENT-GAIN PEAK IN HEMTs: THEORY AND EXPERIMENTS 113
A New Millimeter Wave Small-Signal Modeling Approach for pHEMTs Accounting for the Output Conductance Time Delay 112
Automated Microwave Device Characterization Set-up Based on a Technology-Independent Generalized Bias System 112
Characterization of GaN HEMT Low-Frequency Dispersion Through a Multi-Harmonic Measurement System 112
A GaN power amplifier for 100 VDC bus in GPS L-band 112
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design 111
Kink Effect in S22 for GaN and GaAs HEMTs 111
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data 111
On the use of the discrete-time convolution model for the compensation of non-idealities within digital acquisition channels 110
Identification of the optimum operation for GaN HEMTs in high-power amplifiers 110
null 110
Accurate Nonlinear Electron Device Modelling for Cold FET Mixer Design 110
A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology 110
Evaluation of high-voltage transistor reliability under nonlinear dynamic operation 109
Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements 109
A New Approach to Microwave Power Amplifier Design Based on the Experimental Characterization of the Intrinsic Electron-Device Load-line 109
Scalable nonlinear FET model based on a distributed parasitic network description 108
A Small-Signal Parameter-Based Metric for Nonlinear Models of Electron Devices 108
GaN Ku-band low-noise amplifier design including RF life test 108
null 108
Evaluation of FET performance and restrictions by low-frequency measurements 107
Empirical Investigation on Time Dispersion of Microwave Electron Device Characteristics under Nonlinear Dynamic Operating Conditions 107
Electron Device Model Parameter Identification Through Large-Signal-Predictive Small-Signal-Based Error Functions 106
An Automated Measurement System for the Characterization of Electron Device Degradation under Nonlinear Dynamic Regime 106
“Hybrid” Approach to Microwave Power Amplifier Design 106
Microwave FET model identification based on vector intermodulation measurements 106
Nonlinear modeling of InP devices for W-band applications 106
Accurate EM-Based Modeling of Cascode FETs 106
Small-Signal Operation-Based Simplified Verification of Non-Linear Models for Millimeter-Wave Electron Devices 105
A distributed approach for millimetre-wave electron device modelling 105
Workshops and short courses 104
Characterization of charge-trapping effects in GaN FETs through low-frequency measurements 104
Nonlinear model for 40-GHz cold-FET operation 104
75-VDC GaN technology investigation from a degradation perspective 104
An ultra-wideband sensing board for IoT 104
Automated Microwave Device Characterization Set-up Based on a Technology-independent Generalized Bias System 103
Temperature dependent vector large-signal measurements 103
GaN power amplifier design exploiting wideband large-signal matching 103
Small- Versus Large-Signal Extraction of Charge Models of Microwave FETs 103
On the evaluation of the high-frequency load line in active devices 102
Comparison of Electron Device Models Based on Operation-specific Metrics 102
Investigation on the Thermal Behavior of Microwave GaN HEMTs 102
null 102
Nonlinear Deembedding of Microwave Large-Signal Measurements 102
Thermal characterization of high-power GaN HEMTs up to 65 GHz 101
A novel technique for the extraction of nonlinear model for microwave transistors under dynamic-bias operation 101
Extraction of an Extrinsic Parasitic Network for Accurate mm-Wave FET Scalable Modeling on the Basis of Full-Wave EM Simulation 101
On-Wafer I/V measurement setup for the characterization of low-frequency dispersion in electron devices 101
null 100
Investigation on the non-quasi-static effect implementation for millimeter-wave FET models 100
Impact of microwave measurement uncertainty on the Nonlinear Embedding procedure 100
null 100
Accurate Modeling of Electron Device I/V Characteristics Through a Simplified Large-Signal Measurement Setup 99
Waveforms-Based Large-Signal Identification of Transistor Models 99
Accurate PHEMT Nonlinear Modeling in the Presence of Low-Frequency Dispersive Effects 99
Scalable Equivalent Circuit FET Model for MMIC Design Identified Through FW-EM-Analyses 99
Purely analytical extraction of an improved nonlinear FinFET model including non-quasi-static effects 98
Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers 98
Non-linear look-up table modeling of GaAs HEMTs for mixer application 97
null 97
Totale 11.641
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Categoria #
all - tutte 78.290
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 992
Totale 79.282
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20202.487 0 0 0 0 277 454 395 421 338 311 190 101
2020/20212.659 184 258 119 310 117 289 148 316 67 464 242 145
2021/20221.797 81 204 134 24 86 95 95 82 74 152 236 534
2022/20231.507 190 10 35 133 238 276 70 142 255 13 98 47
2023/20241.080 95 146 82 40 127 189 56 48 15 28 38 216
2024/20251.049 89 94 313 40 513 0 0 0 0 0 0 0
Totale 17.205