In this paper an automated measurement system for the investigation of degradation phenomena in GaN FETs is presented. The system is able to perform both static and dynamic stress cycles under actual device operation, gathering useful information strictly related to the 'health' of the device. As case study a 75-VDC GaN HEMT was used for a 19-hours stress test, putting in evidence how the device performance slightly degrades during the stress experiment.

75-VDC GaN technology investigation from a degradation perspective

TREVISAN, Francesco;RAFFO, Antonio;BOSI, Gianni;VADALA', Valeria;VANNINI, Giorgio;
2017

Abstract

In this paper an automated measurement system for the investigation of degradation phenomena in GaN FETs is presented. The system is able to perform both static and dynamic stress cycles under actual device operation, gathering useful information strictly related to the 'health' of the device. As case study a 75-VDC GaN HEMT was used for a 19-hours stress test, putting in evidence how the device performance slightly degrades during the stress experiment.
9781509058624
FETs; GaN HEMTs; Reliability; Semiconductor device measurements; Electrical and Electronic Engineering; Modeling and Simulation; Computer Networks and Communications
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11392/2372597
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 0
  • ???jsp.display-item.citation.isi??? 0
social impact