RAFFO, Antonio
RAFFO, Antonio
Dipartimento di Ingegneria
150-nm GaN HEMT Degradation under Realistic Load-Line Operation
2022 Raffo, A.; Vadala, V.; Bosi, G.; Giofre, R.; Vannini, G.
2-mm-gate-periphery GaN high electron mobility transistors on SiC and Si substrates: A comparative analysis from a small-signal standpoint
2021 Jarndal, A.; Alim, M. A.; Raffo, A.; Crupi, G.
200-W GaN PA Design Based on Accurate Multicell Transistor Modeling
2022 Vadala, V.; Raffo, A.; Bosi, G.; Barsegyan, A.; Custer, J.; Formicone, G.; Walker, J.; Vannini, G.
75-VDC GaN technology investigation from a degradation perspective
file con accesso da definire2017 Trevisan, Francesco; Raffo, Antonio; Bosi, Gianni; Vadala', Valeria; Vannini, Giorgio; Formicone, Gabriele; Burger, Jeff; Custer, James
A CLEAR-CUT UNDERSTANDING OF THE CURRENT-GAIN PEAK IN HEMTs: THEORY AND EXPERIMENTS
file con accesso da definire2012 G., Crupi; Raffo, Antonio; D. M. M. P., Schreurs; G., Avolio; A., Caddemi; Vannini, Giorgio
A Comprehensive and Critical Overview of the Kink Effect in S22 for HEMT Technology
file con accesso da definire2019 Crupi, G.; Raffo, A.; Marinkovic, Z.; Schreurs, D. M. M. -P.; Caddemi, A.
A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements (Invited Paper)
2023 Crupi, G.; Latino, M.; Gugliandolo, G.; Marinkovic, Z.; Cai, J.; Bosi, G.; Raffo, A.; Fazio, E.; Donato, N.
A de-embedding procedure oriented to the determination of FET intrinsic I-V characteristics from high-frequency large-signal measurements
file con accesso da definire2010 G., Avolio; D., Schreurs; Raffo, Antonio; G., Crupi; Vannini, Giorgio; B., Nauwelaers
A distributed approach for millimetre-wave electron device modelling
file con accesso da definire2006 D., Resca; A., Santarelli; Raffo, Antonio; R., Cignani; Vannini, Giorgio; F., Filicori; A., Cidronali
A dual-source nonlinear measurement system oriented to the empirical characterization of low-frequency dispersion in microwave electron devices
file con accesso da definire2011 Raffo, Antonio; Vadala', Valeria; P. A., Traverso; A., Santarelli; Vannini, Giorgio; F., Filicori
A GaN power amplifier for 100 VDC bus in GPS L-band
file con accesso da definire2017 Formicone, G.; Burger, J.; Custer, J.; Veitschegger, W.; Bosi, Gianni; Raffo, Antonio; Vannini, Giorgio
A GaN-SiC MMIC Doherty Power Amplifier For K-band Wireless Communications
file con accesso da definire2022 Furxhi, S.; Marzi, S. D.; Raffo, A.; Giofre, R.; Colantonio, P.
A Load–Pull Characterization Technique Accounting for Harmonic Tuning
file con accesso da definire2013 Vadala', Valeria; Raffo, Antonio; S., Di Falco; Bosi, Gianni; Nalli, Andrea; Vannini, Giorgio
A Low-Cost and Accurate Technique for the Prediction of Load-Pull Contours
file con accesso da definire2010 Vadala', Valeria; Raffo, Antonio; DI FALCO, Sergio; Vannini, Giorgio
A neural network approach for nonlinear modelling of LDMOSFETs
file con accesso da definire2014 Marinkovic, Zlatica; Crupi, Giovanni; Raffo, Antonio; Bosi, Gianni; Avolio, Gustavo; Markovic, Vera; Caddemi, Alina; Vannini, Giorgio; Schreurs, Dominique M. M. P.
A new approach to Class-E power amplifier design
file con accesso da definire2011 A., Musio; Vadala', Valeria; F., Scappaviva; Raffo, Antonio; DI FALCO, Sergio; Vannini, Giorgio
A New Approach to Microwave Power Amplifier Design Based on the Experimental Characterization of the Intrinsic Electron-Device Load-line
file con accesso da definire2009 Raffo, Antonio; F., Scappaviva; Vannini, Giorgio
A New Calibration Technique of Electromagnetic Simulators for Accurate Analyses of Microwave Components on Epitaxial Wafers
file con accesso da definire2024 Kikuchi, K; Raffo, A; Vadalà, V; Bosi, G; Vannini, G; Yamamoto, H
A new description of fast charge-trapping effects in GaN FETs
file con accesso da definire2015 Bosi, Gianni; Raffo, Antonio; Vadala', Valeria; Vannini, Giorgio
A New Dynamic-Bias Measurement Setup for Nonlinear Transistor Model Identification
2017 Vadala', Valeria; Raffo, Antonio; Avolio, Gustavo; Marchetti, Mauro; Schreurs, Dominique M. M. P.; Vannini, Giorgio
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| 150-nm GaN HEMT Degradation under Realistic Load-Line Operation | 2022 | Raffo, A.; Vadala, V.; Bosi, G.; Giofre, R.; Vannini, G. | |
| 2-mm-gate-periphery GaN high electron mobility transistors on SiC and Si substrates: A comparative analysis from a small-signal standpoint | 2021 | Jarndal, A.; Alim, M. A.; Raffo, A.; Crupi, G. | |
| 200-W GaN PA Design Based on Accurate Multicell Transistor Modeling | 2022 | Vadala, V.; Raffo, A.; Bosi, G.; Barsegyan, A.; Custer, J.; Formicone, G.; Walker, J.; Vannini, G. | |
| 75-VDC GaN technology investigation from a degradation perspective | 2017 | Trevisan, Francesco; Raffo, Antonio; Bosi, Gianni; Vadala', Valeria; Vannini, Giorgio; Formicone,... Gabriele; Burger, Jeff; Custer, James | file con accesso da definire |
| A CLEAR-CUT UNDERSTANDING OF THE CURRENT-GAIN PEAK IN HEMTs: THEORY AND EXPERIMENTS | 2012 | G., Crupi; Raffo, Antonio; D. M. M. P., Schreurs; G., Avolio; A., Caddemi; Vannini, Giorgio | file con accesso da definire |
| A Comprehensive and Critical Overview of the Kink Effect in S22 for HEMT Technology | 2019 | Crupi, G.; Raffo, A.; Marinkovic, Z.; Schreurs, D. M. M. -P.; Caddemi, A. | file con accesso da definire |
| A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements (Invited Paper) | 2023 | Crupi, G.; Latino, M.; Gugliandolo, G.; Marinkovic, Z.; Cai, J.; Bosi, G.; Raffo, A.; Fazio, E.; ...Donato, N. | |
| A de-embedding procedure oriented to the determination of FET intrinsic I-V characteristics from high-frequency large-signal measurements | 2010 | G., Avolio; D., Schreurs; Raffo, Antonio; G., Crupi; Vannini, Giorgio; B., Nauwelaers | file con accesso da definire |
| A distributed approach for millimetre-wave electron device modelling | 2006 | D., Resca; A., Santarelli; Raffo, Antonio; R., Cignani; Vannini, Giorgio; F., Filicori; A., Cidro...nali | file con accesso da definire |
| A dual-source nonlinear measurement system oriented to the empirical characterization of low-frequency dispersion in microwave electron devices | 2011 | Raffo, Antonio; Vadala', Valeria; P. A., Traverso; A., Santarelli; Vannini, Giorgio; F., Filicori | file con accesso da definire |
| A GaN power amplifier for 100 VDC bus in GPS L-band | 2017 | Formicone, G.; Burger, J.; Custer, J.; Veitschegger, W.; Bosi, Gianni; Raffo, Antonio; Vannini, G...iorgio | file con accesso da definire |
| A GaN-SiC MMIC Doherty Power Amplifier For K-band Wireless Communications | 2022 | Furxhi, S.; Marzi, S. D.; Raffo, A.; Giofre, R.; Colantonio, P. | file con accesso da definire |
| A Load–Pull Characterization Technique Accounting for Harmonic Tuning | 2013 | Vadala', Valeria; Raffo, Antonio; S., Di Falco; Bosi, Gianni; Nalli, Andrea; Vannini, Giorgio | file con accesso da definire |
| A Low-Cost and Accurate Technique for the Prediction of Load-Pull Contours | 2010 | Vadala', Valeria; Raffo, Antonio; DI FALCO, Sergio; Vannini, Giorgio | file con accesso da definire |
| A neural network approach for nonlinear modelling of LDMOSFETs | 2014 | Marinkovic, Zlatica; Crupi, Giovanni; Raffo, Antonio; Bosi, Gianni; Avolio, Gustavo; Markovic, Ve...ra; Caddemi, Alina; Vannini, Giorgio; Schreurs, Dominique M. M. P. | file con accesso da definire |
| A new approach to Class-E power amplifier design | 2011 | A., Musio; Vadala', Valeria; F., Scappaviva; Raffo, Antonio; DI FALCO, Sergio; Vannini, Giorgio | file con accesso da definire |
| A New Approach to Microwave Power Amplifier Design Based on the Experimental Characterization of the Intrinsic Electron-Device Load-line | 2009 | Raffo, Antonio; F., Scappaviva; Vannini, Giorgio | file con accesso da definire |
| A New Calibration Technique of Electromagnetic Simulators for Accurate Analyses of Microwave Components on Epitaxial Wafers | 2024 | Kikuchi, K; Raffo, A; Vadalà, V; Bosi, G; Vannini, G; Yamamoto, H | file con accesso da definire |
| A new description of fast charge-trapping effects in GaN FETs | 2015 | Bosi, Gianni; Raffo, Antonio; Vadala', Valeria; Vannini, Giorgio | file con accesso da definire |
| A New Dynamic-Bias Measurement Setup for Nonlinear Transistor Model Identification | 2017 | Vadala', Valeria; Raffo, Antonio; Avolio, Gustavo; Marchetti, Mauro; Schreurs, Dominique M. M. P....; Vannini, Giorgio |