In this paper, reliability issues in Gallium Nitride (GaN) HEMTs are empirically investigated. To this purpose, stress measurements were carried out on a microwave transistor under realistic load-line conditions exploiting a nonlinear load-pull setup operating at few megahertz. Although the characterization strategy was applied on a 150-nm GaN technology, it has general validity and, as will be demonstrated by the reported experimental results, can be successfully applied to evaluate the maturity of the investigated technology processes.
150-nm GaN HEMT Degradation under Realistic Load-Line Operation
Raffo A.
;Bosi G.;Vannini G.
2022
Abstract
In this paper, reliability issues in Gallium Nitride (GaN) HEMTs are empirically investigated. To this purpose, stress measurements were carried out on a microwave transistor under realistic load-line conditions exploiting a nonlinear load-pull setup operating at few megahertz. Although the characterization strategy was applied on a 150-nm GaN technology, it has general validity and, as will be demonstrated by the reported experimental results, can be successfully applied to evaluate the maturity of the investigated technology processes.File in questo prodotto:
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