In this paper, a model extraction technique suitable for GaN transistors with very large periphery is described. The technique is based on the accurate nonlinear model extraction of a reference size device that is then scaled to a larger periphery preserving its original accuracy. The proposed model has been extensively validated with microwave nonlinear load-pull measurements and with the design of a 200-W S-band power amplifier.

200-W GaN PA Design Based on Accurate Multicell Transistor Modeling

Raffo A.
;
Bosi G.;Vannini G.
2022

Abstract

In this paper, a model extraction technique suitable for GaN transistors with very large periphery is described. The technique is based on the accurate nonlinear model extraction of a reference size device that is then scaled to a larger periphery preserving its original accuracy. The proposed model has been extensively validated with microwave nonlinear load-pull measurements and with the design of a 200-W S-band power amplifier.
2022
9781665496131
microwave FET
nonlinear transistor modeling
power amplifiers
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/2499121
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