In this paper, a model extraction technique suitable for GaN transistors with very large periphery is described. The technique is based on the accurate nonlinear model extraction of a reference size device that is then scaled to a larger periphery preserving its original accuracy. The proposed model has been extensively validated with microwave nonlinear load-pull measurements and with the design of a 200-W S-band power amplifier.
200-W GaN PA Design Based on Accurate Multicell Transistor Modeling
Raffo A.
Secondo
;Bosi G.;Vannini G.Ultimo
2022
Abstract
In this paper, a model extraction technique suitable for GaN transistors with very large periphery is described. The technique is based on the accurate nonlinear model extraction of a reference size device that is then scaled to a larger periphery preserving its original accuracy. The proposed model has been extensively validated with microwave nonlinear load-pull measurements and with the design of a 200-W S-band power amplifier.File in questo prodotto:
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