When dealing with microwave electron device modeling, robust device characterization typically involves measurement systems which enable the device to be characterized under actual operations, that means under high-frequency nonlinear regime. Nevertheless, high-frequency large-signal measurement systems are very expensive, have limited frequency, and, moreover, when the identification of a nonlinear model is the measurement purpose, reactive parasitic elements tend to hide the most important nonlinearity source: the “intrinsic drain current source”. In order to overcome these problems, an alternative nonlinear measurement setup based on large-signal sinusoidal excitation at low-frequency (e.g., a few megahertz) is here proposed to characterize the intrinsic electron device behavior. Different experimental examples, carried out on both field-effect and bipolar transistors, are here provided in order to clearly demonstrate the capabilities of the proposed electron-device characterization technique.

A dual-source nonlinear measurement system oriented to the empirical characterization of low-frequency dispersion in microwave electron devices

RAFFO, Antonio;VADALA', Valeria;VANNINI, Giorgio;
2011

Abstract

When dealing with microwave electron device modeling, robust device characterization typically involves measurement systems which enable the device to be characterized under actual operations, that means under high-frequency nonlinear regime. Nevertheless, high-frequency large-signal measurement systems are very expensive, have limited frequency, and, moreover, when the identification of a nonlinear model is the measurement purpose, reactive parasitic elements tend to hide the most important nonlinearity source: the “intrinsic drain current source”. In order to overcome these problems, an alternative nonlinear measurement setup based on large-signal sinusoidal excitation at low-frequency (e.g., a few megahertz) is here proposed to characterize the intrinsic electron device behavior. Different experimental examples, carried out on both field-effect and bipolar transistors, are here provided in order to clearly demonstrate the capabilities of the proposed electron-device characterization technique.
Raffo, Antonio; Vadala', Valeria; P. A., Traverso; A., Santarelli; Vannini, Giorgio; F., Filicori
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/1409186
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