This paper presents a new modeling approach accounting for the nonlinear description of low-frequency dispersive effects (due to thermal phenomena and traps) affecting electron devices. The theoretical formulation is quite general and includes as particular cases different models proposed in the literature. A large set of experimental results, oriented to microwave GaN power amplifier design, is provided to give an exhaustive validation under realistic device operation.

Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design

RAFFO, Antonio;VADALA', Valeria;VANNINI, Giorgio
2010

Abstract

This paper presents a new modeling approach accounting for the nonlinear description of low-frequency dispersive effects (due to thermal phenomena and traps) affecting electron devices. The theoretical formulation is quite general and includes as particular cases different models proposed in the literature. A large set of experimental results, oriented to microwave GaN power amplifier design, is provided to give an exhaustive validation under realistic device operation.
2010
Raffo, Antonio; Vadala', Valeria; D., Schreurs; G., Crupi; G., Avolio; A., Caddemi; Vannini, Giorgio
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in SFERA sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/1394007
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 115
  • ???jsp.display-item.citation.isi??? 99
social impact