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EnglishThe present paper was focused on the extraction of a GaAs pHEMT nonlinear model meant for mixer design. The model is based on an equivalent circuit that is analytically extracted from DC and multi-bias S-parameter measurements. The look-up table approach is used to implement the model in a nonlinear RF circuit simulator. The model accuracy is extensively verified by comparing device measurements and simulations under a wide range of operating conditions. Furthermore, to corroborate the validity of the model, the design of a Q-band up-converter is considered.
http://hdl.handle.net/11392/2240212| Titolo: | Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design |
| Autori interni: | RAFFO, Antonio BOSI, Gianni VANNINI, Giorgio |
| Data di pubblicazione: | 2015 |
| Rivista: | SOLID-STATE ELECTRONICS |
| Abstract: | The present paper was focused on the extraction of a GaAs pHEMT nonlinear model meant for mixer design. The model is based on an equivalent circuit that is analytically extracted from DC and multi-bias S-parameter measurements. The look-up table approach is used to implement the model in a nonlinear RF circuit simulator. The model accuracy is extensively verified by comparing device measurements and simulations under a wide range of operating conditions. Furthermore, to corroborate the validity of the model, the design of a Q-band up-converter is considered. |
| Handle: | http://hdl.handle.net/11392/2240212 |
| Appare nelle tipologie: | 03.1 Articolo su rivista |
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