The present paper was focused on the extraction of a GaAs pHEMT nonlinear model meant for mixer design. The model is based on an equivalent circuit that is analytically extracted from DC and multi-bias S-parameter measurements. The look-up table approach is used to implement the model in a nonlinear RF circuit simulator. The model accuracy is extensively verified by comparing device measurements and simulations under a wide range of operating conditions. Furthermore, to corroborate the validity of the model, the design of a Q-band up-converter is considered.

Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design

RAFFO, Antonio
Secondo
;
BOSI, Gianni;VANNINI, Giorgio
Ultimo
2015

Abstract

The present paper was focused on the extraction of a GaAs pHEMT nonlinear model meant for mixer design. The model is based on an equivalent circuit that is analytically extracted from DC and multi-bias S-parameter measurements. The look-up table approach is used to implement the model in a nonlinear RF circuit simulator. The model accuracy is extensively verified by comparing device measurements and simulations under a wide range of operating conditions. Furthermore, to corroborate the validity of the model, the design of a Q-band up-converter is considered.
Giovanni, Crupi; Raffo, Antonio; Gustavo, Avolio; Bosi, Gianni; Giuseppe, Sivverini; Francesco, Palomba; Alina, Caddemi; Dominique M. M. P., Schreurs; Vannini, Giorgio
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11392/2240212
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