The first chapter is meant to give a comprehensive overview of the fundamentals, state-of-the-art, challenges, and future trends in the field of high-frequency transistor modeling. Linear, as well as noise and nonlinear operations, are dealt with. The importance of microwave transistor modeling comes from the fact that the transistor is the key component in high-frequency circuits that are at the heart of modern wireless communication systems, such as mobile telephony. We are currently witnessing a proliferation of wireless communication applications and continuous progress in transistor technologies that make high-frequency transistor modeling a hot topic of great interest.

Microwave transistor modeling

RAFFO, Antonio;VANNINI, Giorgio
2016

Abstract

The first chapter is meant to give a comprehensive overview of the fundamentals, state-of-the-art, challenges, and future trends in the field of high-frequency transistor modeling. Linear, as well as noise and nonlinear operations, are dealt with. The importance of microwave transistor modeling comes from the fact that the transistor is the key component in high-frequency circuits that are at the heart of modern wireless communication systems, such as mobile telephony. We are currently witnessing a proliferation of wireless communication applications and continuous progress in transistor technologies that make high-frequency transistor modeling a hot topic of great interest.
2016
9780128038949
9780128038949
Circuit design; Equivalent circuit model; GaAs; GaN; High-electron-mobility transistor (HEMT); Microwave measurements; Modeling; Noise parameters; Engineering (all)
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/2351738
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