A novel solid-state power amplifier technology for RF power sources used in various industrial, scientific and medical (ISM) applications is presented. The prototype devices reported for this paper achieve 200 W CW saturated output power with 80% drain efficiency at 430 MHz and 110 W at 915 MHz. Unlike ubiquitous 50 V solid-state transistor technology, the data we present explore 75 V and 100 V bias operation in UHF band with GaN devices which have the potential of achieving >70% efficiency at kilowatt power level by properly designing and sizing the active devices. Microwave sintering, particle accelerators and magnetic resonance imaging equipment at UHF or L-band are the most likely beneficiary of the technology introduced in this paper.

Solid-state RF power amplifiers for ISM CW applications based on 100 V GaN technology

BOSI, Gianni;RAFFO, Antonio;VANNINI, Giorgio
2016

Abstract

A novel solid-state power amplifier technology for RF power sources used in various industrial, scientific and medical (ISM) applications is presented. The prototype devices reported for this paper achieve 200 W CW saturated output power with 80% drain efficiency at 430 MHz and 110 W at 915 MHz. Unlike ubiquitous 50 V solid-state transistor technology, the data we present explore 75 V and 100 V bias operation in UHF band with GaN devices which have the potential of achieving >70% efficiency at kilowatt power level by properly designing and sizing the active devices. Microwave sintering, particle accelerators and magnetic resonance imaging equipment at UHF or L-band are the most likely beneficiary of the technology introduced in this paper.
9782874870446
9782874870446
accelerator; amplifier; GaN transistor; high efficiency; microwave; sintering; Electrical and Electronic Engineering; Instrumentation
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11392/2363260
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