A nonlinear empirical model is here adopted to model the cold-FET behaviour of a GaAs PHEMT, in the framework of a resistive mixer application. The model, purely mathematical and technology independent, is suitably identified in the device operative region of interest and is validated in large-signal conditions by exploiting a measurements setup based on LSVNA.
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Titolo: | Accurate Nonlinear Electron Device Modelling for Cold FET Mixer Design |
Autori: | |
Data di pubblicazione: | 2008 |
Abstract: | A nonlinear empirical model is here adopted to model the cold-FET behaviour of a GaAs PHEMT, in the framework of a resistive mixer application. The model, purely mathematical and technology independent, is suitably identified in the device operative region of interest and is validated in large-signal conditions by exploiting a measurements setup based on LSVNA. |
Handle: | http://hdl.handle.net/11392/529875 |
Appare nelle tipologie: | 04.2 Contributi in atti di convegno (in Volume) |
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