A nonlinear empirical model is here adopted to model the cold-FET behaviour of a GaAs PHEMT, in the framework of a resistive mixer application. The model, purely mathematical and technology independent, is suitably identified in the device operative region of interest and is validated in large-signal conditions by exploiting a measurements setup based on LSVNA.

Accurate Nonlinear Electron Device Modelling for Cold FET Mixer Design

DI GIACOMO, Valeria;RAFFO, Antonio;VANNINI, Giorgio;
2008

Abstract

A nonlinear empirical model is here adopted to model the cold-FET behaviour of a GaAs PHEMT, in the framework of a resistive mixer application. The model, purely mathematical and technology independent, is suitably identified in the device operative region of interest and is validated in large-signal conditions by exploiting a measurements setup based on LSVNA.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/529875
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