Behavioral Modeling of GaN FETs: a Load-Line Approach

In this paper, a new model formulation is presented that correctly accounts for low-frequency dispersion (i.e., trapping and thermal phenomena) affecting field-effect transistors (FETs). In particular, for the first time a behavioral description is applied only to the intrinsic current generator, enabling the correct measurement-based evaluation of the intrinsic device operation. The model, which is by construction technology independent, has been extensively validated considering a GaN FET. This choice is justified by the large interest around this technology and by the presence of dispersion effects that must be accurately accounted for.