SFERA Archivio dei prodotti della Ricerca dell'Università di Ferrara

RAFFO, Antonio
 Distribuzione geografica
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Continente #
NA - Nord America 1.314
EU - Europa 796
AS - Asia 521
AF - Africa 29
SA - Sud America 22
OC - Oceania 10
Totale 2.692
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Nazione #
US - Stati Uniti d'America 1.258
IT - Italia 277
CN - Cina 118
DE - Germania 109
FR - Francia 96
JP - Giappone 89
IN - India 80
GB - Regno Unito 51
CA - Canada 43
TW - Taiwan 43
HK - Hong Kong 41
SE - Svezia 34
IR - Iran 33
PL - Polonia 30
SG - Singapore 24
RU - Federazione Russa 23
BE - Belgio 21
CZ - Repubblica Ceca 20
NL - Olanda 19
RO - Romania 15
ES - Italia 14
UA - Ucraina 14
BD - Bangladesh 12
MY - Malesia 12
IE - Irlanda 11
FI - Finlandia 10
IL - Israele 10
KR - Corea 10
AE - Emirati Arabi Uniti 9
AU - Australia 9
CH - Svizzera 8
DZ - Algeria 8
JO - Giordania 8
MX - Messico 8
ZA - Sudafrica 8
CO - Colombia 7
LT - Lituania 7
PT - Portogallo 7
TR - Turchia 7
VN - Vietnam 7
GR - Grecia 6
NO - Norvegia 6
BR - Brasile 5
EG - Egitto 5
MA - Marocco 5
KZ - Kazakistan 4
PR - Porto Rico 4
BY - Bielorussia 3
EC - Ecuador 3
IQ - Iraq 3
MM - Myanmar 3
PH - Filippine 3
RS - Serbia 3
TN - Tunisia 3
UY - Uruguay 3
CL - Cile 2
DK - Danimarca 2
HR - Croazia 2
SI - Slovenia 2
TH - Thailandia 2
AT - Austria 1
BG - Bulgaria 1
BO - Bolivia 1
HN - Honduras 1
ID - Indonesia 1
LU - Lussemburgo 1
LV - Lettonia 1
ME - Montenegro 1
MO - Macao, regione amministrativa speciale della Cina 1
NZ - Nuova Zelanda 1
PK - Pakistan 1
SK - Slovacchia (Repubblica Slovacca) 1
VE - Venezuela 1
Totale 2.692
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Città #
Houston 213
Ann Arbor 103
Santa Cruz 103
Fairfield 89
Ashburn 87
Seattle 49
Buffalo 44
Woodbridge 39
Munich 36
Cambridge 35
Ferrara 35
Settimo Milanese 34
Bengaluru 29
San Diego 27
Warsaw 27
Des Moines 25
Central 24
Wilmington 24
Stockholm 16
Tokyo 16
Hangzhou 15
Milan 15
San Jose 15
Shanghai 15
Taipei 15
Beijing 14
Chicago 14
Rome 14
Los Angeles 13
Lake Forest 12
Messina 12
Padova 12
Toronto 12
Boardman 11
Dublin 11
Hsinchu 11
Singapore 11
Chittagong 10
Helsinki 10
Meieki 10
Ottawa 10
Clearwater 9
Frankfurt am Main 9
Iasi 9
Nanjing 9
Paris 9
Bologna 8
Göteborg 8
Las Vegas 8
London 8
Deerlijk 7
Nagoya 7
Saint-Étienne-du-Rouvray 7
San Francisco 7
Sydney 7
Cugnaux 6
Duncan 6
Francavilla Fontana 6
Gifu 6
Gothenburg 6
Hamilton 6
New Delhi 6
Shenzhen 6
Vicenza 6
Boulder 5
Delhi 5
Guangzhou 5
Hong Kong 5
Karaj 5
Le Petit-Quevilly 5
Redmond 5
Tehran 5
Waltham 5
Alexandria 4
Amman 4
Astana 4
Bandra 4
Berlin 4
Bucharest 4
Chengdu 4
Columbus 4
Council Bluffs 4
Ferrara di Monte Baldo 4
Florence 4
George Town 4
Gravina di Catania 4
Grenoble 4
Guadalajara 4
Hanoi 4
Kofu 4
Kuala Lumpur 4
Kyiv 4
Mayagüez 4
Muizenberg 4
Málaga 4
Sharjah 4
Xian 4
Yorba Linda 4
České Budějovice 4
Aci Catena 3
Totale 1.635
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Nome #
GaN HEMT Noise Model Based on Electromagnetic Simulations, file e309ade2-e3fa-3969-e053-3a05fe0a2c94 339
Dynamic-Bias S-Parameters: A New Measurement Technique for Microwave Transistors, file e309ade2-6180-3969-e053-3a05fe0a2c94 330
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers, file e309ade2-7195-3969-e053-3a05fe0a2c94 319
Temperature Influence on GaN HEMT Equivalent Circuit, file e309ade3-75a8-3969-e053-3a05fe0a2c94 206
Kink Effect in S22 for GaN and GaAs HEMTs, file e309ade3-0029-3969-e053-3a05fe0a2c94 193
Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design, file e309ade3-7ce3-3969-e053-3a05fe0a2c94 171
GaN HEMT noise modeling based on 50-Ω noise factor, file e309ade4-1bdf-3969-e053-3a05fe0a2c94 162
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems, file e309ade3-0753-3969-e053-3a05fe0a2c94 161
A New Dynamic-Bias Measurement Setup for Nonlinear Transistor Model Identification, file e309ade2-eea6-3969-e053-3a05fe0a2c94 156
Evaluation of Uncertainty in Temporal Waveforms of Microwave Transistors, file e309ade2-718f-3969-e053-3a05fe0a2c94 155
Technology-Independent Analysis of the Double Current-Gain Peak in Millimeter-Wave FETs, file e309ade3-00a2-3969-e053-3a05fe0a2c94 141
A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique, file e309ade2-fd7c-3969-e053-3a05fe0a2c94 132
Neural approach for temperature-dependent modeling of GaN HEMTs, file e309ade4-2414-3969-e053-3a05fe0a2c94 81
Measurement Uncertainty Propagation in Transistor Model Parameters via Polynomial Chaos Expansion, file e309ade2-e606-3969-e053-3a05fe0a2c94 67
A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology, file e309ade2-1148-3969-e053-3a05fe0a2c94 61
An ultra-wideband sensing board for radio frequency front-end in IoT transmitters, file e309ade5-40d1-3969-e053-3a05fe0a2c94 41
Scalability of Multifinger HEMT Performance, file e309ade4-a68e-3969-e053-3a05fe0a2c94 23
Neural approach for temperature-dependent modeling of GaN HEMTs, file e309ade3-088c-3969-e053-3a05fe0a2c94 14
A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements (Invited Paper), file bf37a328-0dfa-49df-9d1b-8de7a65ba859 7
An Improved Transistor Modeling Methodology Exploiting the Quasi-Static Approximation, file e309ade4-1177-3969-e053-3a05fe0a2c94 7
Temperature Influence on GaN HEMT Equivalent Circuit, file e309ade3-7bd1-3969-e053-3a05fe0a2c94 2
Advances in Ku-Band GaN Single Chip Front End for Space SARs: From System Specifications to Technology Selection, file 17201f1b-845d-47e9-9701-ec6caa733580 1
Analysis of Efficiency-Limiting Factors Resulting from Transistor Current Source on Class-F and Inverse Class-F Power Amplifiers, file b210f822-2a42-45a1-a1da-35f6184d845c 1
Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design, file e309ade2-ecad-3969-e053-3a05fe0a2c94 1
Evaluation of Uncertainty in Temporal Waveforms of Microwave Transistors, file e309ade2-fe66-3969-e053-3a05fe0a2c94 1
Measurement Uncertainty Propagation in Transistor Model Parameters via Polynomial Chaos Expansion, file e309ade3-7d72-3969-e053-3a05fe0a2c94 1
Load-Pull Measurements Oriented to Harmonically-Tuned Power Amplifier Design, file e309ade4-adc7-3969-e053-3a05fe0a2c94 1
GaN FET Load-Pull Data in Circuit Simulators: a Comparative Study, file e309ade4-b7fa-3969-e053-3a05fe0a2c94 1
A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements, file e309ade4-dd6b-3969-e053-3a05fe0a2c94 1
Totale 2.776
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Categoria #
all - tutte 6.940
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 6.940
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202044 0 0 0 0 0 14 11 5 5 3 2 4
2020/2021374 1 2 3 5 9 15 27 76 34 118 48 36
2021/20221.112 58 36 72 216 149 41 84 68 57 67 173 91
2022/2023772 43 61 143 78 39 57 90 41 52 53 62 53
2023/2024474 51 65 61 36 58 40 35 50 32 46 0 0
Totale 2.776