This study focuses on temperature dependent characterization of a 0.25x1500 µm2 GaN HEMT. The impact of the ambient temperature on the microwave performance is reported and discussed. It is achieved that the reduction of the average electron velocity with increasing temperature leads to a remarkably degradation of the main figures of merit.

Thermal characterization of high-power GaN HEMTs up to 65 GHz

PETROCCHI, Alessandra;Valeria Vadalà;Antonio Raffo
;
and Giorgio Vannini
2017

Abstract

This study focuses on temperature dependent characterization of a 0.25x1500 µm2 GaN HEMT. The impact of the ambient temperature on the microwave performance is reported and discussed. It is achieved that the reduction of the average electron velocity with increasing temperature leads to a remarkably degradation of the main figures of merit.
978-1-5386-1800-4
Figures of merit, GaN, HEMT, Microwave measurements, Temperature.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11392/2382007
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