In the context of the European Union TARGET Network of Excellence (NoE) a specific interest has been oriented to the comparison of different electron device models in order to choose the most suitable for a particular application (e.g. highly linear amplifiers, low phase noise oscillators). To this purpose different metrics have been defined to compare the models behavior under different operating conditions (i.e. dc, ac small-and large-signal). In this paper we apply different metrics proposed under the TARGET NoE in order to compare two models, the nonlinear discrete convolution (NDC) model, based on a table-based black-box approach, and the EEHEMT1 model, based on the classic equivalent circuit approach. The goal is to provide a set of practical criteria for carrying on reliable model comparisons.
Comparison of Electron Device Models Based on Operation-specific Metrics
RAFFO, Antonio;LONAC, Julio Andres;VANNINI, Giorgio
2005
Abstract
In the context of the European Union TARGET Network of Excellence (NoE) a specific interest has been oriented to the comparison of different electron device models in order to choose the most suitable for a particular application (e.g. highly linear amplifiers, low phase noise oscillators). To this purpose different metrics have been defined to compare the models behavior under different operating conditions (i.e. dc, ac small-and large-signal). In this paper we apply different metrics proposed under the TARGET NoE in order to compare two models, the nonlinear discrete convolution (NDC) model, based on a table-based black-box approach, and the EEHEMT1 model, based on the classic equivalent circuit approach. The goal is to provide a set of practical criteria for carrying on reliable model comparisons.I documenti in SFERA sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
