This paper presents an innovative extraction technique for the modelling of transistor I/V characteristics. Starting from few continuous wave measurements carried out at 10 MHz by a vector load-pull measurement system, it is demonstrated how the extracted I/V model shows good predictions in harmonically tuned operations. As a case study, a 0.5-μm GaN HEMT with 1-mm of periphery is considered. The extracted model has been validated through comparisons with vector nonlinear measurements carried out in condition very different from the ones exploited in the identification phase.
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|Titolo:||Fast extraction of accurate I/V models for harmonically-tuned power amplifier design|
|Data di pubblicazione:||2016|
|Appare nelle tipologie:||04.2 Contributi in atti di convegno (in Volume)|