This paper presents an innovative extraction technique for the modelling of transistor I/V characteristics. Starting from few continuous wave measurements carried out at 10 MHz by a vector load-pull measurement system, it is demonstrated how the extracted I/V model shows good predictions in harmonically tuned operations. As a case study, a 0.5-μm GaN HEMT with 1-mm of periphery is considered. The extracted model has been validated through comparisons with vector nonlinear measurements carried out in condition very different from the ones exploited in the identification phase.
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design
VADALA', Valeria;RAFFO, Antonio;BOSI, Gianni;VANNINI, Giorgio;
2016
Abstract
This paper presents an innovative extraction technique for the modelling of transistor I/V characteristics. Starting from few continuous wave measurements carried out at 10 MHz by a vector load-pull measurement system, it is demonstrated how the extracted I/V model shows good predictions in harmonically tuned operations. As a case study, a 0.5-μm GaN HEMT with 1-mm of periphery is considered. The extracted model has been validated through comparisons with vector nonlinear measurements carried out in condition very different from the ones exploited in the identification phase.File in questo prodotto:
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