Breakdown Walkout Investigation in Electron Devices Under Nonlinear Dynamic Regime

In this paper, the breakdown walkout in microwave electron devices is investigated by means of a recently proposed measurement set-up. This innovative setup allows to apply a stress procedure not only in classical static conditions, but also under dynamic regime by applying a large-amplitude excitation signal at moderately high frequency at either the input or the output port of the device. As a matter of fact, for the very first time, experimental data can be collected for fully investigating the walkout behaviour under both static and dynamic operations.