In this paper, the breakdown walkout in microwave electron devices is investigated by means of a recently proposed measurement set-up. This innovative setup allows to apply a stress procedure not only in classical static conditions, but also under dynamic regime by applying a large-amplitude excitation signal at moderately high frequency at either the input or the output port of the device. As a matter of fact, for the very first time, experimental data can be collected for fully investigating the walkout behaviour under both static and dynamic operations.

Breakdown Walkout Investigation in Electron Devices Under Nonlinear Dynamic Regime

DI GIACOMO, Valeria;RAFFO, Antonio;VANNINI, Giorgio;
2008

Abstract

In this paper, the breakdown walkout in microwave electron devices is investigated by means of a recently proposed measurement set-up. This innovative setup allows to apply a stress procedure not only in classical static conditions, but also under dynamic regime by applying a large-amplitude excitation signal at moderately high frequency at either the input or the output port of the device. As a matter of fact, for the very first time, experimental data can be collected for fully investigating the walkout behaviour under both static and dynamic operations.
2008
9781424426461
Device characterization; Electron device degradation; Nonlinear dynamic measurement; Time dispersion; Walkout;
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/529876
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