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EnglishA new empirical nonlinear model of GaN-based electron devices is presented in the paper. The model takes into account low-frequency dispersion due to self-heating and charge-trapping phenomena and provides accurate predictions at frequencies where nonquasi-static effects are important. The model is based on the application of a recently proposed equivalent-voltage approach and is identified by using pulsed measurements of drain current characteristics and pulsed S-parameter sets. Full experimental validation on a GaN on SiC PHEMT is provided at both small- and large-signal operating conditions.
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http://hdl.handle.net/11392/523035| Titolo: | Nonquasi-Static Large-Signal Model of GaN FETs through an Equivalent Voltage Approach |
| Autori interni: | DI GIACOMO, Valeria RAFFO, Antonio VANNINI, Giorgio |
| Data di pubblicazione: | 2008 |
| Rivista: | INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING |
| Abstract: | A new empirical nonlinear model of GaN-based electron devices is presented in the paper. The model takes into account low-frequency dispersion due to self-heating and charge-trapping phenomena and provides accurate predictions at frequencies where nonquasi-static effects are important. The model is based on the application of a recently proposed equivalent-voltage approach and is identified by using pulsed measurements of drain current characteristics and pulsed S-parameter sets. Full experimental validation on a GaN on SiC PHEMT is provided at both small- and large-signal operating conditions. |
| Handle: | http://hdl.handle.net/11392/523035 |
| Appare nelle tipologie: | 03.1 Articolo su rivista |
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