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EnglishA new empirical nonlinear model of GaN-based electron devices is presented in the paper. The model takes into account low-frequency dispersion due to self-heating and charge-trapping phenomena and provides accurate predictions at frequencies where nonquasi-static effects are important. The model is based on the application of a recently proposed equivalent-voltage approach and is identified by using pulsed measurements of drain current characteristics and pulsed S-parameter sets. Full experimental validation on a GaN on SiC PHEMT is provided at both small- and large-signal operating conditions.
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| Data di pubblicazione: | 2008 | |
| Titolo: | Nonquasi-Static Large-Signal Model of GaN FETs through an Equivalent Voltage Approach | |
| Autori: | A.Santarelli; V.Di Giacomo; A.Raffo; F.Filicori; G.Vannini; R.Aubry; C.Gaquière | |
| Rivista: | INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING | |
| Parole Chiave: | GaN device; Nonlinear dynamic modelling; Nonquasi-static model; Low-frequency dispersion; Pulsed measurements | |
| Abstract: | A new empirical nonlinear model of GaN-based electron devices is presented in the paper. The model takes into account low-frequency dispersion due to self-heating and charge-trapping phenomena and provides accurate predictions at frequencies where nonquasi-static effects are important. The model is based on the application of a recently proposed equivalent-voltage approach and is identified by using pulsed measurements of drain current characteristics and pulsed S-parameter sets. Full experimental validation on a GaN on SiC PHEMT is provided at both small- and large-signal operating conditions. | |
| Digital Object Identifier (DOI): | 10.1002/mmce.20326 | |
| Handle: | http://hdl.handle.net/11392/523035 | |
| Appare nelle tipologie: | 03.1 Articolo su rivista |
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