A new empirical nonlinear model of GaN-based electron devices is presented in the paper. The model takes into account low-frequency dispersion due to self-heating and charge-trapping phenomena and provides accurate predictions at frequencies where nonquasi-static effects are important. The model is based on the application of a recently proposed equivalent-voltage approach and is identified by using pulsed measurements of drain current characteristics and pulsed S-parameter sets. Full experimental validation on a GaN on SiC PHEMT is provided at both small- and large-signal operating conditions.

Nonquasi-Static Large-Signal Model of GaN FETs through an Equivalent Voltage Approach

DI GIACOMO, Valeria;RAFFO, Antonio;VANNINI, Giorgio;
2008

Abstract

A new empirical nonlinear model of GaN-based electron devices is presented in the paper. The model takes into account low-frequency dispersion due to self-heating and charge-trapping phenomena and provides accurate predictions at frequencies where nonquasi-static effects are important. The model is based on the application of a recently proposed equivalent-voltage approach and is identified by using pulsed measurements of drain current characteristics and pulsed S-parameter sets. Full experimental validation on a GaN on SiC PHEMT is provided at both small- and large-signal operating conditions.
A., Santarelli; DI GIACOMO, Valeria; Raffo, Antonio; F., Filicori; Vannini, Giorgio; R., Aubry; C., Gaquière
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11392/523035
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