This contribution aims at the experimental confirmation of the advantages of the harmonic manipulation theory, using a low-frequency low-cost characterization setup. A 0.5-μm 10×100 μm (1-mm gate periphery) GaN HEMT has been characterized synthesizing at the current-generator plane different load conditions, realizing tuned-load and Class-F operation. The measurements clearly demonstrate the importance of by synthesizing the required loads at the correct reference plane, giving an experimental proof of the performance predicted by theoretical analysis.

Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data

RAFFO, Antonio
Primo
;
VADALA', Valeria;BOSI, Gianni;VANNINI, Giorgio
Penultimo
;
2015

Abstract

This contribution aims at the experimental confirmation of the advantages of the harmonic manipulation theory, using a low-frequency low-cost characterization setup. A 0.5-μm 10×100 μm (1-mm gate periphery) GaN HEMT has been characterized synthesizing at the current-generator plane different load conditions, realizing tuned-load and Class-F operation. The measurements clearly demonstrate the importance of by synthesizing the required loads at the correct reference plane, giving an experimental proof of the performance predicted by theoretical analysis.
2015
978-1-4673-6496-6
FET, harmonic manipulation, integrated circuit measurements, microwave power amplifier, semiconductor device measurements
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/2338117
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