We extend the recently proposed dynamic-bias measurement technique to the identification of non-quasi-static FET models. In particular, we propose to exploit two high-frequency tickles superimposed on the low-frequency large-signal excitation. The tickle frequencies are chosen in order to separately extract the quasi-static and non-quasi-static model parameters. As case study, we extracted and validated the model of an GaAs pHEMT.
|Titolo:||A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique|
RAFFO, Antonio (Primo) (Corresponding)
VANNINI, Giorgio (Ultimo)
|Data di pubblicazione:||2015|
|Appare nelle tipologie:||03.1 Articolo su rivista|