We extend the recently proposed dynamic-bias measurement technique to the identification of non-quasi-static FET models. In particular, we propose to exploit two high-frequency tickles superimposed on the low-frequency large-signal excitation. The tickle frequencies are chosen in order to separately extract the quasi-static and non-quasi-static model parameters. As case study, we extracted and validated the model of an GaAs pHEMT.
A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique
RAFFO, Antonio
Primo
;VADALA', Valeria;VANNINI, GiorgioUltimo
2015
Abstract
We extend the recently proposed dynamic-bias measurement technique to the identification of non-quasi-static FET models. In particular, we propose to exploit two high-frequency tickles superimposed on the low-frequency large-signal excitation. The tickle frequencies are chosen in order to separately extract the quasi-static and non-quasi-static model parameters. As case study, we extracted and validated the model of an GaAs pHEMT.File in questo prodotto:
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