The manuscript presents a comparison between two nonlinear procedures oriented to the investigation of the intrinsic I/V dynamic characteristics at a transistor’s current-generator plane. These approaches, without the need of modeling device trapping and thermal effects, allow to obtain information at the current-generator reference plane that is more strictly linked to the device performance in terms of output power and efficiency.

NONLINEAR EMBEDDING AND DE-EMBEDDING TECHNIQUES FOR LARGE-SIGNAL FET MEASUREMENTS

VADALA', Valeria;RAFFO, Antonio;VANNINI, Giorgio
2012

Abstract

The manuscript presents a comparison between two nonlinear procedures oriented to the investigation of the intrinsic I/V dynamic characteristics at a transistor’s current-generator plane. These approaches, without the need of modeling device trapping and thermal effects, allow to obtain information at the current-generator reference plane that is more strictly linked to the device performance in terms of output power and efficiency.
2012
Vadala', Valeria; G., Avolio; Raffo, Antonio; D. M. M. P., Schreurs; Vannini, Giorgio
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/1705701
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