In this paper, we introduce the use of the low-frequency characterization of electron devices as an accurate and economical way to fast gather consistent data about the electron device performance at microwaves in the evaluation phase of new components, technologies and processes.

Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance

BOSI, Gianni;RAFFO, Antonio;VADALA', Valeria;TREVISAN, Francesco;VANNINI, Giorgio;
2016

Abstract

In this paper, we introduce the use of the low-frequency characterization of electron devices as an accurate and economical way to fast gather consistent data about the electron device performance at microwaves in the evaluation phase of new components, technologies and processes.
9782874870446
9782874870446
GaN; HEMT; measurements; semiconductor devices; Electrical and Electronic Engineering; Instrumentation
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11392/2363249
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