In this paper, we introduce the use of the low-frequency characterization of electron devices as an accurate and economical way to fast gather consistent data about the electron device performance at microwaves in the evaluation phase of new components, technologies and processes.
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance
BOSI, Gianni;RAFFO, Antonio;VADALA', Valeria;TREVISAN, Francesco;VANNINI, Giorgio;
2016
Abstract
In this paper, we introduce the use of the low-frequency characterization of electron devices as an accurate and economical way to fast gather consistent data about the electron device performance at microwaves in the evaluation phase of new components, technologies and processes.File in questo prodotto:
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