High-Efficiency Broadband Power Amplifier Design Technique Based on a Measured-Load-Line Approach

The paper presents an innovative power amplifier design technique oriented to microwave applications which require both high efficiency and large bandwidth. The approach is based on a recently proposed technique which, by exploiting a direct low-frequency nonlinear electron device characterization in conjunction with a model-based description of the device capacitances, achieves the same level of accuracy provided by expensive nonlinear setups operating at microwave frequencies. As a tough test-bench, a commercially available discrete power GaN FET has been adopted.