As well as largely exploited for microwave high-power applications, aluminum gallium nitride (AlGaN)/GaN high electron mobility transistor (HEMT) technologies have demonstrated promising results for the design of low-noise, high dynamic range, and highly robust amplifiers. In this manuscript, we describe the design and characterization of a Ku-band monolithic microwave integrated circuit low-noise amplifier for telecom space applications, exploiting an industrial AlGaN/GaN 0.25-μm HEMT on silicon carbide process. In the frequency band 12.75–14.8 GHz, the LNA features over 20 dB linear gain with a noise figure around 1.8 dB. Input and output return losses are nearly 10 dB. Power dissipation is 700 mW in linear operation. An innovative transistor model based on electromagnetic analyses and small-signal and noise measurements has been developed to improve the predictions of the foundry model on source-degenerated devices. A systematic radio frequency (RF) life stress test campaign performed on the designed low-noise amplifier demonstrated a safe operating area of 15 dBm of overdrive input power.
GaN Ku-band low-noise amplifier design including RF life test
NALLI, ANDREA;RAFFO, Antonio;VANNINI, Giorgio;
2015
Abstract
As well as largely exploited for microwave high-power applications, aluminum gallium nitride (AlGaN)/GaN high electron mobility transistor (HEMT) technologies have demonstrated promising results for the design of low-noise, high dynamic range, and highly robust amplifiers. In this manuscript, we describe the design and characterization of a Ku-band monolithic microwave integrated circuit low-noise amplifier for telecom space applications, exploiting an industrial AlGaN/GaN 0.25-μm HEMT on silicon carbide process. In the frequency band 12.75–14.8 GHz, the LNA features over 20 dB linear gain with a noise figure around 1.8 dB. Input and output return losses are nearly 10 dB. Power dissipation is 700 mW in linear operation. An innovative transistor model based on electromagnetic analyses and small-signal and noise measurements has been developed to improve the predictions of the foundry model on source-degenerated devices. A systematic radio frequency (RF) life stress test campaign performed on the designed low-noise amplifier demonstrated a safe operating area of 15 dBm of overdrive input power.I documenti in SFERA sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
