The present manuscript details a wideband high power amplifier design, based on a 5-mm GaN power bar. In particular, a broadband input large-signal matching condition has been realized, that ensures optimal power transfer under actual device operation. The measured performance of the PA perfectly matches the expected predictions based on large-signal measurements carried out on a 1.25-mm GaN elementary cell.
GaN power amplifier design exploiting wideband large-signal matching
RAFFO, Antonio;VADALA', Valeria;VANNINI, Giorgio
2012
Abstract
The present manuscript details a wideband high power amplifier design, based on a 5-mm GaN power bar. In particular, a broadband input large-signal matching condition has been realized, that ensures optimal power transfer under actual device operation. The measured performance of the PA perfectly matches the expected predictions based on large-signal measurements carried out on a 1.25-mm GaN elementary cell.File in questo prodotto:
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