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EnglishIn this paper, we present a new dynamic-bias measurement setup and its application to the extraction of a nonlinear model for microwave field-effect transistors. The dynamic-bias technique has been recently proposed and relies on the use of low-frequency (LF) and high-frequency (HF) vector-calibrated measurements acquired, for instance, by means of a large-signal network analyzer. In this paper, we propose a new and alternative technique to perform the dynamic-bias measurements, based on relatively low-cost instrumentation commonly available in microwave laboratories. The new acquisition system is composed of a four-channel vector LF receiver (e.g., an oscilloscope) and a one-channel HF scalar receiver (e.g., a spectrum analyzer), which replace the eight-channel vector receiver. Moreover, the proposed architecture greatly simplifies the measurement setup and the calibration procedure. As a case study, a 0.25-μm GaN HEMT is considered. Dynamic-bias measurements, carried out by means of the proposed measurement setup, are used for the identification of a nonlinear model of this device. Finally, the model is fully validated through comparison with time-domain harmonic load–pull measurements carried out at 5 GHz.
| Data di pubblicazione: | 2017 | |
| Titolo: | A New Dynamic-Bias Measurement Setup for Nonlinear Transistor Model Identification | |
| Autori: | Vadala', Valeria; Raffo, Antonio; Avolio, Gustavo; Marchetti, Mauro; Schreurs, Dominique M. M. P.; Vannini, Giorgio | |
| Rivista: | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | |
| Keywords: | Dynamic bias, FETs, harmonic load–pull measurements, nonlinear measurements, nonlinear models, semiconductor device measurements | |
| Abstract in inglese: | In this paper, we present a new dynamic-bias measurement setup and its application to the extraction of a nonlinear model for microwave field-effect transistors. The dynamic-bias technique has been recently proposed and relies on the use of low-frequency (LF) and high-frequency (HF) vector-calibrated measurements acquired, for instance, by means of a large-signal network analyzer. In this paper, we propose a new and alternative technique to perform the dynamic-bias measurements, based on relatively low-cost instrumentation commonly available in microwave laboratories. The new acquisition system is composed of a four-channel vector LF receiver (e.g., an oscilloscope) and a one-channel HF scalar receiver (e.g., a spectrum analyzer), which replace the eight-channel vector receiver. Moreover, the proposed architecture greatly simplifies the measurement setup and the calibration procedure. As a case study, a 0.25-μm GaN HEMT is considered. Dynamic-bias measurements, carried out by means of the proposed measurement setup, are used for the identification of a nonlinear model of this device. Finally, the model is fully validated through comparison with time-domain harmonic load–pull measurements carried out at 5 GHz. | |
| Digital Object Identifier (DOI): | 10.1109/TMTT.2016.2628748 | |
| Handle: | http://hdl.handle.net/11392/2358555 | |
| Appare nelle tipologie: | 03.1 Articolo su rivista |
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| File | Descrizione | Tipologia | Licenza | |
|---|---|---|---|---|
| TMTT2628748_DB_Val.pdf | Articolo principale (post-print dell'autore) | Post-print | PUBBLICO - Pubblico con Copyright | Open Access Visualizza/Apri |
| 11392_2358555_FULL_Vadala.pdf | Full text (versione editoriale) | NON PUBBLICO - Accesso privato/ristretto | Administrator Richiedi una copia |
http://hdl.handle.net/11392/2358555
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