A X-band GaN monolithic microwave integrated circuits (MMIC) High Power Amplifier (HPA) suitable for future generation Synthetic Aperture Radar systems is presented. The HPA delivers 14 W of output power, more than 38% of PAE in the frequency bandwidth from 8.8 to 10.4 GHz. Its linear gain is greater than 25 dB. For the first time an MMIC X-band HPA has been designed by directly measuring the transistor behavior at the current generator plane. In particular, optimum device load-line has been selected according to the chosen performance tradeoffs.

X-Band GaN Power Amplifier for Future Generation SAR Systems

RAFFO, Antonio;VADALA', Valeria;VANNINI, Giorgio
2014

Abstract

A X-band GaN monolithic microwave integrated circuits (MMIC) High Power Amplifier (HPA) suitable for future generation Synthetic Aperture Radar systems is presented. The HPA delivers 14 W of output power, more than 38% of PAE in the frequency bandwidth from 8.8 to 10.4 GHz. Its linear gain is greater than 25 dB. For the first time an MMIC X-band HPA has been designed by directly measuring the transistor behavior at the current generator plane. In particular, optimum device load-line has been selected according to the chosen performance tradeoffs.
D., Resca; Raffo, Antonio; S., Di Falco; F., Scappaviva; Vadala', Valeria; Vannini, Giorgio
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/1954817
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