SFERA Archivio dei prodotti della Ricerca dell'Università di Ferrara

OLIVO, Piero
 Distribuzione geografica
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Continente #
NA - Nord America 14.401
EU - Europa 5.167
AS - Asia 2.972
SA - Sud America 263
AF - Africa 18
Continente sconosciuto - Info sul continente non disponibili 6
OC - Oceania 2
Totale 22.829
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Nazione #
US - Stati Uniti d'America 14.201
PL - Polonia 1.998
CN - Cina 1.299
SG - Singapore 1.002
IT - Italia 844
UA - Ucraina 743
DE - Germania 542
TR - Turchia 452
GB - Regno Unito 449
BR - Brasile 246
FI - Finlandia 215
SE - Svezia 203
CA - Canada 187
ID - Indonesia 59
FR - Francia 38
KR - Corea 38
AT - Austria 32
BE - Belgio 29
NL - Olanda 22
HK - Hong Kong 18
VN - Vietnam 18
TW - Taiwan 16
RU - Federazione Russa 15
BD - Bangladesh 9
CZ - Repubblica Ceca 9
JP - Giappone 9
IL - Israele 8
IN - India 8
MA - Marocco 7
EU - Europa 6
MX - Messico 6
IE - Irlanda 5
UZ - Uzbekistan 5
CH - Svizzera 4
EC - Ecuador 4
IQ - Iraq 4
NP - Nepal 4
PY - Paraguay 4
AR - Argentina 3
AZ - Azerbaigian 3
ES - Italia 3
LT - Lituania 3
PA - Panama 3
PK - Pakistan 3
RO - Romania 3
TN - Tunisia 3
VE - Venezuela 3
ZA - Sudafrica 3
AM - Armenia 2
AU - Australia 2
BO - Bolivia 2
GR - Grecia 2
GT - Guatemala 2
IR - Iran 2
KG - Kirghizistan 2
LB - Libano 2
NO - Norvegia 2
PT - Portogallo 2
AE - Emirati Arabi Uniti 1
AO - Angola 1
BG - Bulgaria 1
CL - Cile 1
CR - Costa Rica 1
EE - Estonia 1
EG - Egitto 1
HU - Ungheria 1
JO - Giordania 1
KE - Kenya 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
LK - Sri Lanka 1
ME - Montenegro 1
MY - Malesia 1
NI - Nicaragua 1
OM - Oman 1
PS - Palestinian Territory 1
SA - Arabia Saudita 1
SC - Seychelles 1
SN - Senegal 1
Totale 22.829
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Città #
Fairfield 2.174
Warsaw 1.995
Woodbridge 1.738
Houston 1.283
Ashburn 947
Seattle 887
Jacksonville 850
Ann Arbor 774
Wilmington 758
Santa Clara 744
Cambridge 735
Chandler 622
Singapore 443
Izmir 316
Ferrara 301
Nanjing 280
Beijing 211
Princeton 196
Milan 193
Addison 190
San Diego 180
Boardman 122
Mcallen 113
Montréal 108
Munich 88
Shanghai 85
Nanchang 81
Shenyang 79
Ottawa 73
Helsinki 65
Changsha 60
Dearborn 59
Jakarta 59
Los Angeles 59
Jiaxing 53
Hebei 50
Settimo Milanese 44
Tianjin 44
San Mateo 39
Redwood City 38
Council Bluffs 36
Falls Church 36
London 36
Jinan 32
Norwalk 32
Auburn Hills 27
Vienna 27
Mountain View 26
Brussels 25
Hangzhou 24
Des Moines 23
Frankfurt An Der Oder 21
Napoli 21
Falkenstein 20
Ningbo 19
Zhengzhou 19
Guangzhou 18
Bologna 17
Dong Ket 17
Kunming 17
Orange 15
Verona 15
Hong Kong 14
São Paulo 13
Chicago 12
Philadelphia 12
Indiana 11
Lanzhou 10
Phoenix 10
Redmond 9
Xian 9
Amsterdam 8
New York 8
Nuremberg 8
Rio de Janeiro 8
Taipei 8
Changchun 7
Hounslow 7
Taizhou 7
Brasília 6
Guarulhos 6
Hefei 6
Seoul 6
Washington 6
Bielefeld 5
Clifton 5
Frankfurt am Main 5
Gif-sur-yvette 5
Ribeirão Preto 5
Tappahannock 5
Tashkent 5
Tokyo 5
Toronto 5
Acton 4
Belo Horizonte 4
Delft 4
Haikou 4
Kidron 4
Kilburn 4
Paris 4
Totale 17.923
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Nome #
Electrical characterization and modeling of 1T-1R RRAM arrays with amorphous and poly-crystalline HfO2 436
Performance and reliability comparison of 1T-1R RRAM arrays with amorphous and polycrystalline HfO2 431
RRAM Reliability/Performance Characterization through Array Architectures Investigations 397
Implications of the Incremental Pulse and Verify Algorithm on the Forming and Switching Distributions in RERAM Arrays 333
Impact of temperature on conduction mechanisms and switching parameters in HfO2-based 1T-1R resistive random access memories devices 333
Automated characterization of TAS-MRAM test arrays 323
Radiation hard design of HfO2 based 1T1R cells and memory arrays 318
Reduction of the Cell-to-Cell Variability in Hf1-xAlxOy Based RRAM Arrays by Using Program Algorithms 311
Electrical characterization and modeling of pulse-based forming techniques in RRAM arrays 306
Reliability and Cell-to-Cell Variability of TAS-MRAM arrays under cycling conditions 303
Assessing the forming temperature role on amorphous and polycrystalline HfO2-based 4 kbit RRAM arrays performance 301
Relationship among Current Fluctuations during Forming, Cell-To-Cell Variability and Reliability in RRAM Arrays 301
SSDExplorer: a Virtual Platform for Performance/Reliability-oriented Fine-Grained Design Space Exploration of Solid State Drives 199
Impact of Intercell and Intracell Variability on Forming and Switching Parameters in RRAM Arrays 188
Reliability challenges in 3D NAND Flash memories 177
Simulations of the software-defined flash 170
Solid-State Drives: Memory Driven Design Methodologies for Optimal Performance 166
System interconnect extensions for fully transparent demand paging in low-cost MMU-less embedded systems 154
Quality of Service implications of Enhanced Program Algorithms for Charge Trapping NAND in future Solid State Drives 153
LDPC Soft Decoding with Reduced Power and Latency in 1X-2X NAND Flash-Based Solid State Drives 153
Impact of the Incremental Programming Algorithm on the Filament Conduction in HfO2-Based RRAM Arrays 145
Fundamental variability limits of filament-based RRAM 139
Characterization of TLC 3D-NAND Flash Endurance through Machine Learning for LDPC Code Rate Optimization 137
Data retention investigation in Al:HfO 2 -based resistive random access memory arrays by using high-Temperature accelerated tests 137
A cross-layer approach for new reliability-performance trade-offs in MLC NAND flash memories 136
Characterization of flash structures erased with ultra-short pulses 135
Constant charge erasing scheme for Flash Memories 135
Mechanism of the Key Impact of Residual Carbon Content on the Reliability of Integrated Resistive Random Access Memory Arrays 135
Statistical Methodologies for Integrated Circuits Design 134
Characterization of the Over-Erase Algorithm in FN/FN embedded NOR Flash arrays 134
null 133
Experimental Investigation of 4-kb RRAM Arrays Programming Conditions Suitable for TCAM 133
Impact of Pulsed Operation on Performance and Reliability of Flash Memories 132
A BIST Scheme for Non-Volatile Memories 132
Overerase Phenomena: An Insight into Flash memory Reliability 132
Performance and Reliability Analysis of Cross-Layer Optimizations of NAND Flash Controllers 131
Bit error rate analysis in Charge Trapping memories for SSD applications 131
Threshold voltage spread in Flash memories under a constant DQ erasing scheme 131
Hot Electrons in MOS Transistors: Lateral Distribution of the Trapped Oxide Charge 129
Electron trapping/detrapping within thin SiO2 films in the high field tunneling regime 128
Quantum Effects in Accumulation Layers of Si-SiO2 Interfaces in the WKB Effective Mass Approximation 128
Simulation of SSD’s power consumption 128
Correlated Fluctuations and Noise Spectra of Tunneling and Substrate Currents Before Breakdown in Thin-Oxide MOS Devices 128
Erratic bits in flash memories under Fowler-Nordheim programming 127
Electrical characterization of read window in reram arrays under different SET/RESET cycling conditions 127
Is Consumer Electronics Redesigning Our Cars?: Challenges of Integrated Technologies for Sensing, Computing, and Storage 127
Analysis of reliability/performance trade-off in Solid State Drives 127
Characterization of the interface-driven 1st Reset operation in HfO2-based 1T1R RRAM devices 127
Power-supply impact on the reliability of mid-1X TLC NAND flash memories 126
A Probabilistic Fault Model for “Analog” Faults in Digital CMOS Circuits 126
Reliability and performance characterization of a mems-based non-volatile switch 125
A statistical model of Erratic Erase based on an automated Random Telegraph Signal characterization technique 124
Cell-to-cell Fundamental Variability Limits Investigation in OxRRAM arrays 124
SSDExplorer: A virtual platform for fine-grained design space exploration of Solid State Drives 123
A new failure mode of very thin (< 50 A) Thermal SiO2 Films 123
Correlating Power Efficiency and Lifetime to Programming Strategies in RRAM-Based FPGAs 123
Quantum effects in accumulated MOS thin dielectric structures 122
Empirical investigation of SET Seasoning Effects in Phase Change Memory arrays 122
Analysis of Edge Wordline Disturb in Multimegabit Charge Trapping Flash NAND arrays 121
Reliability of 3D NAND Flash Memories 121
LDPC Soft Decoding with Improved Performance in 1X-2X MLC and TLC NAND Flash-Based Solid State Drives 121
Aliasing in Signature Analysis Testing with Multiple-Input Shift-Registers 120
Architectural and Integration Options for 3D NAND Flash Memories 120
Limits of sensing and storage electronic components for high-reliable and safety-critical automotive applications 120
Advanced Electrical-Level Modeling of EEPROM Cells 119
Low-Frequency Noise in Silicon-Gate Metal-Oxide-Silicon Capacitors Before Oxide Breakdown 118
Erratic Bits Classification for Efficient Repair Strategies in Automotive Embedded Flash Memories 118
Fault Simulation for General FCMOS ICs 117
A Statistical Model of Erratic Behaviors in Flash Memory Arrays 117
Dielectric reliability for future logic and Non-Volatile Memory applications: a statistical simulation analysis approach 117
Resistive RAM technology for SSDs 117
SSDExplorer: A virtual platform for SSD simulations 117
Characterization of a MEMS-based embedded non volatile memory array for extreme environments 117
Cross-Temperature Effects of Program and Read Operations in 2D and 3D NAND Flash Memories 117
Modeling the Endurance Reliability of Intra-disk RAID Solutions for mid-1X TLC NAND Flash Solid State Drives 116
Two-Dimensional Effects in Hot-Electron Modified MOSFET's 115
An Analytical Model for the Aliasing Probability in Signature Analysis Testing 115
Reliability of erasing operation in NOR-Flash memories 115
Simulations of RRAM-based SSDs 115
Testing of E2PROM Aging and Endurance: a Case Study 114
Impact of short SET pulse sequence on Electronic Switching in Phase Change Memory arrays 114
Non Volatile Memory Partitioning Scheme for Technology-based Performance-Reliability Trade-off 114
Evidence of the Role of Defects Near the Injecting Interface in Determining SiO2 Breakdown 114
Improving performance and reliability of NOR-Flash arrays by using pulsed operation 113
Statistical analysis of resistive switching characteristics in ReRAM test arrays 113
High-Field-Induced Voltage-Dependent Oxide-Charge 113
A New Methodology for Two Level Random-Telegraph-Noise Identification and Statistical Analysis 113
Analysis and Optimization of Erasing Waveform in Phase Change Memory Arrays 112
A new automated methodology for Random Telegraph Signal identification and characterization: a case study on Phase Change Memory arrays 111
Self-Consistent Solution of Poisson and Schrodinger Equations in Accumulated Semiconductor-Insulator Interfaces 110
Transient simulation of the erase cycle of floating gate EEPROMs 110
A Compact Model for Erratic Event Simulation in Flash Memory Arrays 110
Testability Measures in Pseudorandom Testing 110
Analysis of Resistive Bridging Fault Detection in BiCMOS Digital ICs 109
Set of electrical characteristic parameters suitable for reliability analysis of multimegabit Phase Change Memory arrays 109
Design trade-offs for NAND flash-based SSDs 109
Impact of Tunnel Oxide Thickness on Erratic Erase in Flash Memories 109
Fast Identification of Critical Electrical Disturbs in Nonvolatile Memories 108
Erratic bits in Flash memories under Fowler-Nordheim programming 108
Reliability Evaluation of Combinational Logic Circuits by Symbolic Simulation 108
Totale 15.193
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Categoria #
all - tutte 102.536
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 8.221
Totale 110.757
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20201.367 0 0 0 0 0 0 0 0 477 506 215 169
2020/20213.545 317 322 224 366 168 458 201 388 103 539 279 180
2021/20222.125 106 146 157 44 169 126 126 107 116 166 199 663
2022/20231.755 207 17 82 183 230 289 174 167 213 10 139 44
2023/2024721 105 108 21 28 50 38 27 51 17 24 10 242
2024/20252.590 92 181 356 55 451 503 181 316 455 0 0 0
Totale 23.155