SFERA Archivio dei prodotti della Ricerca dell'Università di Ferrara

OLIVO, Piero
 Distribuzione geografica
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Continente #
NA - Nord America 13.583
EU - Europa 5.008
AS - Asia 2.272
Continente sconosciuto - Info sul continente non disponibili 6
SA - Sud America 3
AF - Africa 2
OC - Oceania 2
Totale 20.876
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Nazione #
US - Stati Uniti d'America 13.401
PL - Polonia 1.996
CN - Cina 1.281
IT - Italia 819
UA - Ucraina 741
DE - Germania 506
GB - Regno Unito 446
TR - Turchia 444
SG - Singapore 385
SE - Svezia 201
CA - Canada 181
FI - Finlandia 164
ID - Indonesia 59
FR - Francia 38
KR - Corea 38
BE - Belgio 27
AT - Austria 26
VN - Vietnam 18
TW - Taiwan 16
NL - Olanda 14
JP - Giappone 9
IL - Israele 7
EU - Europa 6
RU - Federazione Russa 6
CZ - Repubblica Ceca 5
HK - Hong Kong 5
IN - India 5
CH - Svizzera 4
IE - Irlanda 4
ES - Italia 3
RO - Romania 3
AU - Australia 2
BR - Brasile 2
IR - Iran 2
BG - Bulgaria 1
EC - Ecuador 1
EG - Egitto 1
GR - Grecia 1
HU - Ungheria 1
IQ - Iraq 1
LK - Sri Lanka 1
MA - Marocco 1
ME - Montenegro 1
MY - Malesia 1
PA - Panama 1
PT - Portogallo 1
Totale 20.876
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Città #
Fairfield 2.174
Warsaw 1.995
Woodbridge 1.738
Houston 1.283
Ashburn 941
Seattle 887
Jacksonville 850
Ann Arbor 774
Wilmington 758
Cambridge 735
Chandler 622
Izmir 316
Ferrara 300
Nanjing 280
Singapore 276
Beijing 211
Princeton 196
Addison 190
Milan 189
San Diego 180
Boardman 122
Mcallen 113
Montréal 108
Munich 85
Shanghai 84
Nanchang 81
Shenyang 79
Ottawa 70
Changsha 60
Dearborn 59
Jakarta 59
Santa Clara 54
Jiaxing 53
Los Angeles 52
Hebei 50
Settimo Milanese 44
Tianjin 44
San Mateo 39
Redwood City 38
Falls Church 36
London 36
Norwalk 32
Jinan 31
Auburn Hills 27
Mountain View 26
Hangzhou 24
Brussels 23
Des Moines 23
Vienna 22
Frankfurt An Der Oder 21
Napoli 21
Ningbo 19
Zhengzhou 19
Guangzhou 18
Dong Ket 17
Kunming 17
Helsinki 16
Bologna 15
Orange 15
Verona 15
Chicago 12
Philadelphia 12
Indiana 11
Lanzhou 10
Phoenix 10
Redmond 9
Xian 9
New York 8
Taipei 8
Changchun 7
Hounslow 7
Taizhou 7
Amsterdam 6
Hefei 6
Seoul 6
Washington 6
Bielefeld 5
Clifton 5
Gif-sur-yvette 5
Tappahannock 5
Tokyo 5
Acton 4
Delft 4
Haikou 4
Kidron 4
Kilburn 4
Paris 4
Simi Valley 4
Taiyuan 4
Wuhan 4
Yellow Springs 4
Benevento 3
Dresden 3
Fuzhou 3
Herent 3
Monza 3
Münster 3
Palermo 3
Southwark 3
Tel Aviv 3
Totale 16.888
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Nome #
Electrical characterization and modeling of 1T-1R RRAM arrays with amorphous and poly-crystalline HfO2 420
Performance and reliability comparison of 1T-1R RRAM arrays with amorphous and polycrystalline HfO2 419
RRAM Reliability/Performance Characterization through Array Architectures Investigations 390
Implications of the Incremental Pulse and Verify Algorithm on the Forming and Switching Distributions in RERAM Arrays 322
Impact of temperature on conduction mechanisms and switching parameters in HfO2-based 1T-1R resistive random access memories devices 320
Automated characterization of TAS-MRAM test arrays 310
Radiation hard design of HfO2 based 1T1R cells and memory arrays 307
Reduction of the Cell-to-Cell Variability in Hf1-xAlxOy Based RRAM Arrays by Using Program Algorithms 302
Electrical characterization and modeling of pulse-based forming techniques in RRAM arrays 293
Reliability and Cell-to-Cell Variability of TAS-MRAM arrays under cycling conditions 293
Assessing the forming temperature role on amorphous and polycrystalline HfO2-based 4 kbit RRAM arrays performance 289
Relationship among Current Fluctuations during Forming, Cell-To-Cell Variability and Reliability in RRAM Arrays 287
SSDExplorer: a Virtual Platform for Performance/Reliability-oriented Fine-Grained Design Space Exploration of Solid State Drives 183
Impact of Intercell and Intracell Variability on Forming and Switching Parameters in RRAM Arrays 174
Reliability challenges in 3D NAND Flash memories 169
Solid-State Drives: Memory Driven Design Methodologies for Optimal Performance 150
Quality of Service implications of Enhanced Program Algorithms for Charge Trapping NAND in future Solid State Drives 139
System interconnect extensions for fully transparent demand paging in low-cost MMU-less embedded systems 137
null 133
Data retention investigation in Al:HfO 2 -based resistive random access memory arrays by using high-Temperature accelerated tests 131
Characterization of the Over-Erase Algorithm in FN/FN embedded NOR Flash arrays 127
Characterization of flash structures erased with ultra-short pulses 125
Performance and Reliability Analysis of Cross-Layer Optimizations of NAND Flash Controllers 125
Impact of Pulsed Operation on Performance and Reliability of Flash Memories 124
A cross-layer approach for new reliability-performance trade-offs in MLC NAND flash memories 124
Overerase Phenomena: An Insight into Flash memory Reliability 124
Impact of the Incremental Programming Algorithm on the Filament Conduction in HfO2-Based RRAM Arrays 124
Mechanism of the Key Impact of Residual Carbon Content on the Reliability of Integrated Resistive Random Access Memory Arrays 124
Characterization of TLC 3D-NAND Flash Endurance through Machine Learning for LDPC Code Rate Optimization 124
Simulations of the software-defined flash 124
Quantum Effects in Accumulation Layers of Si-SiO2 Interfaces in the WKB Effective Mass Approximation 123
Statistical Methodologies for Integrated Circuits Design 123
Constant charge erasing scheme for Flash Memories 123
Fundamental variability limits of filament-based RRAM 123
Hot Electrons in MOS Transistors: Lateral Distribution of the Trapped Oxide Charge 121
Electron trapping/detrapping within thin SiO2 films in the high field tunneling regime 120
Bit error rate analysis in Charge Trapping memories for SSD applications 120
Experimental Investigation of 4-kb RRAM Arrays Programming Conditions Suitable for TCAM 120
Correlated Fluctuations and Noise Spectra of Tunneling and Substrate Currents Before Breakdown in Thin-Oxide MOS Devices 120
Is Consumer Electronics Redesigning Our Cars?: Challenges of Integrated Technologies for Sensing, Computing, and Storage 119
Characterization of the interface-driven 1st Reset operation in HfO2-based 1T1R RRAM devices 119
Threshold voltage spread in Flash memories under a constant DQ erasing scheme 118
Erratic bits in flash memories under Fowler-Nordheim programming 116
A BIST Scheme for Non-Volatile Memories 115
Electrical characterization of read window in reram arrays under different SET/RESET cycling conditions 115
LDPC Soft Decoding with Reduced Power and Latency in 1X-2X NAND Flash-Based Solid State Drives 115
Empirical investigation of SET Seasoning Effects in Phase Change Memory arrays 115
Quantum effects in accumulated MOS thin dielectric structures 114
A statistical model of Erratic Erase based on an automated Random Telegraph Signal characterization technique 114
Power-supply impact on the reliability of mid-1X TLC NAND flash memories 113
Reliability and performance characterization of a mems-based non-volatile switch 112
Reliability of 3D NAND Flash Memories 112
Simulation of SSD’s power consumption 112
Analysis of reliability/performance trade-off in Solid State Drives 112
Low-Frequency Noise in Silicon-Gate Metal-Oxide-Silicon Capacitors Before Oxide Breakdown 110
Reliability of erasing operation in NOR-Flash memories 110
Dielectric reliability for future logic and Non-Volatile Memory applications: a statistical simulation analysis approach 110
Limits of sensing and storage electronic components for high-reliable and safety-critical automotive applications 110
Cell-to-cell Fundamental Variability Limits Investigation in OxRRAM arrays 110
Correlating Power Efficiency and Lifetime to Programming Strategies in RRAM-Based FPGAs 110
A Probabilistic Fault Model for “Analog” Faults in Digital CMOS Circuits 110
Analysis of Edge Wordline Disturb in Multimegabit Charge Trapping Flash NAND arrays 109
Erratic Bits Classification for Efficient Repair Strategies in Automotive Embedded Flash Memories 109
Architectural and Integration Options for 3D NAND Flash Memories 109
Characterization of a MEMS-based embedded non volatile memory array for extreme environments 109
Fault Simulation for General FCMOS ICs 108
Impact of short SET pulse sequence on Electronic Switching in Phase Change Memory arrays 108
SSDExplorer: A virtual platform for fine-grained design space exploration of Solid State Drives 108
SSDExplorer: A virtual platform for SSD simulations 108
Two-Dimensional Effects in Hot-Electron Modified MOSFET's 107
Non Volatile Memory Partitioning Scheme for Technology-based Performance-Reliability Trade-off 107
Modeling the Endurance Reliability of Intra-disk RAID Solutions for mid-1X TLC NAND Flash Solid State Drives 107
Testing of E2PROM Aging and Endurance: a Case Study 106
A Statistical Model of Erratic Behaviors in Flash Memory Arrays 106
Statistical analysis of resistive switching characteristics in ReRAM test arrays 106
Simulations of RRAM-based SSDs 106
Improving performance and reliability of NOR-Flash arrays by using pulsed operation 105
High-Field-Induced Voltage-Dependent Oxide-Charge 105
Resistive RAM technology for SSDs 105
A new failure mode of very thin (< 50 A) Thermal SiO2 Films 105
Cross-Temperature Effects of Program and Read Operations in 2D and 3D NAND Flash Memories 104
LDPC Soft Decoding with Improved Performance in 1X-2X MLC and TLC NAND Flash-Based Solid State Drives 104
Evidence of the Role of Defects Near the Injecting Interface in Determining SiO2 Breakdown 104
Set of electrical characteristic parameters suitable for reliability analysis of multimegabit Phase Change Memory arrays 103
Testability Measures in Pseudorandom Testing 103
Aliasing in Signature Analysis Testing with Multiple-Input Shift-Registers 102
A New Methodology for Two Level Random-Telegraph-Noise Identification and Statistical Analysis 102
Multilevel HfO2-based RRAM devices for low-power neuromorphic networks 102
Temperature Dependence of Fowler-Nordheim Injection from Accumulated n-type Silicon into Silicon Dioxide 102
Analysis of Resistive Bridging Fault Detection in BiCMOS Digital ICs 101
Transient simulation of the erase cycle of floating gate EEPROMs 101
Dynamics of Fast-Erasing Bits in Flash Memories 101
Reliability Evaluation of Combinational Logic Circuits by Symbolic Simulation 101
Design of CMOS Checkers with Improved Testability of Bridging and Transistor Stuck-on Faults 101
Fault Simulation of Parametric Bridging Faults in CMOS ICs 101
null 101
Impact of Tunnel Oxide Thickness on Erratic Erase in Flash Memories 101
Dynamic Effects in the Detection of Bridging Faults in CMOS ICs 101
An Analytical Model for the Aliasing Probability in Signature Analysis Testing 100
Self-Consistent Solution of Poisson and Schrodinger Equations in Accumulated Semiconductor-Insulator Interfaces 100
Totale 14.065
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Categoria #
all - tutte 85.106
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 6.690
Totale 91.796
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20204.159 0 0 0 779 405 571 534 503 477 506 215 169
2020/20213.545 317 322 224 366 168 458 201 388 103 539 279 180
2021/20222.125 106 146 157 44 169 126 126 107 116 166 199 663
2022/20231.755 207 17 82 183 230 289 174 167 213 10 139 44
2023/2024721 105 108 21 28 50 38 27 51 17 24 10 242
2024/2025633 92 181 356 4 0 0 0 0 0 0 0 0
Totale 21.198