SFERA Archivio dei prodotti della Ricerca dell'Università di Ferrara

OLIVO, Piero
 Distribuzione geografica
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Continente #
NA - Nord America 13.971
EU - Europa 5.026
AS - Asia 2.308
SA - Sud America 8
Continente sconosciuto - Info sul continente non disponibili 6
AF - Africa 2
OC - Oceania 2
Totale 21.323
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Nazione #
US - Stati Uniti d'America 13.783
PL - Polonia 1.996
CN - Cina 1.283
IT - Italia 822
UA - Ucraina 741
DE - Germania 512
GB - Regno Unito 449
TR - Turchia 444
SG - Singapore 419
SE - Svezia 201
CA - Canada 187
FI - Finlandia 165
ID - Indonesia 59
FR - Francia 38
KR - Corea 38
BE - Belgio 29
AT - Austria 26
VN - Vietnam 18
TW - Taiwan 16
NL - Olanda 14
JP - Giappone 9
IL - Israele 7
BR - Brasile 6
EU - Europa 6
RU - Federazione Russa 6
CZ - Repubblica Ceca 5
HK - Hong Kong 5
IN - India 5
CH - Svizzera 4
IE - Irlanda 4
ES - Italia 3
LT - Lituania 3
RO - Romania 3
AU - Australia 2
IR - Iran 2
BG - Bulgaria 1
BO - Bolivia 1
EC - Ecuador 1
EG - Egitto 1
GR - Grecia 1
HU - Ungheria 1
IQ - Iraq 1
LK - Sri Lanka 1
MA - Marocco 1
ME - Montenegro 1
MY - Malesia 1
PA - Panama 1
PT - Portogallo 1
Totale 21.323
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Città #
Fairfield 2.174
Warsaw 1.995
Woodbridge 1.738
Houston 1.283
Ashburn 942
Seattle 887
Jacksonville 850
Ann Arbor 774
Wilmington 758
Cambridge 735
Chandler 622
Santa Clara 422
Izmir 316
Ferrara 300
Singapore 289
Nanjing 280
Beijing 211
Princeton 196
Addison 190
Milan 189
San Diego 180
Boardman 122
Mcallen 113
Montréal 108
Munich 88
Shanghai 84
Nanchang 81
Shenyang 79
Ottawa 73
Changsha 60
Dearborn 59
Jakarta 59
Jiaxing 53
Los Angeles 52
Hebei 50
Settimo Milanese 44
Tianjin 44
San Mateo 39
Redwood City 38
Falls Church 36
London 36
Norwalk 32
Jinan 31
Auburn Hills 27
Mountain View 26
Brussels 25
Hangzhou 24
Des Moines 23
Vienna 22
Frankfurt An Der Oder 21
Napoli 21
Ningbo 19
Zhengzhou 19
Guangzhou 18
Dong Ket 17
Kunming 17
Helsinki 16
Bologna 15
Orange 15
Verona 15
Chicago 12
Philadelphia 12
Indiana 11
Lanzhou 10
Phoenix 10
Redmond 9
Xian 9
New York 8
Taipei 8
Changchun 7
Hounslow 7
Taizhou 7
Amsterdam 6
Hefei 6
Seoul 6
Washington 6
Bielefeld 5
Clifton 5
Frankfurt am Main 5
Gif-sur-yvette 5
Tappahannock 5
Tokyo 5
Toronto 5
Acton 4
Delft 4
Haikou 4
Kidron 4
Kilburn 4
Paris 4
Simi Valley 4
Taiyuan 4
Wuhan 4
Yellow Springs 4
Benevento 3
Dresden 3
Fuzhou 3
Herent 3
Monza 3
Münster 3
Palermo 3
Totale 17.282
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Nome #
Performance and reliability comparison of 1T-1R RRAM arrays with amorphous and polycrystalline HfO2 422
Electrical characterization and modeling of 1T-1R RRAM arrays with amorphous and poly-crystalline HfO2 422
RRAM Reliability/Performance Characterization through Array Architectures Investigations 392
Implications of the Incremental Pulse and Verify Algorithm on the Forming and Switching Distributions in RERAM Arrays 324
Impact of temperature on conduction mechanisms and switching parameters in HfO2-based 1T-1R resistive random access memories devices 323
Automated characterization of TAS-MRAM test arrays 313
Radiation hard design of HfO2 based 1T1R cells and memory arrays 309
Reduction of the Cell-to-Cell Variability in Hf1-xAlxOy Based RRAM Arrays by Using Program Algorithms 304
Electrical characterization and modeling of pulse-based forming techniques in RRAM arrays 295
Reliability and Cell-to-Cell Variability of TAS-MRAM arrays under cycling conditions 295
Assessing the forming temperature role on amorphous and polycrystalline HfO2-based 4 kbit RRAM arrays performance 291
Relationship among Current Fluctuations during Forming, Cell-To-Cell Variability and Reliability in RRAM Arrays 289
SSDExplorer: a Virtual Platform for Performance/Reliability-oriented Fine-Grained Design Space Exploration of Solid State Drives 185
Impact of Intercell and Intracell Variability on Forming and Switching Parameters in RRAM Arrays 176
Reliability challenges in 3D NAND Flash memories 171
Solid-State Drives: Memory Driven Design Methodologies for Optimal Performance 152
Quality of Service implications of Enhanced Program Algorithms for Charge Trapping NAND in future Solid State Drives 142
System interconnect extensions for fully transparent demand paging in low-cost MMU-less embedded systems 141
Simulations of the software-defined flash 140
null 133
Data retention investigation in Al:HfO 2 -based resistive random access memory arrays by using high-Temperature accelerated tests 133
LDPC Soft Decoding with Reduced Power and Latency in 1X-2X NAND Flash-Based Solid State Drives 129
Characterization of the Over-Erase Algorithm in FN/FN embedded NOR Flash arrays 129
Characterization of flash structures erased with ultra-short pulses 127
A cross-layer approach for new reliability-performance trade-offs in MLC NAND flash memories 127
Performance and Reliability Analysis of Cross-Layer Optimizations of NAND Flash Controllers 127
Impact of Pulsed Operation on Performance and Reliability of Flash Memories 126
Overerase Phenomena: An Insight into Flash memory Reliability 126
Impact of the Incremental Programming Algorithm on the Filament Conduction in HfO2-Based RRAM Arrays 126
Mechanism of the Key Impact of Residual Carbon Content on the Reliability of Integrated Resistive Random Access Memory Arrays 126
Characterization of TLC 3D-NAND Flash Endurance through Machine Learning for LDPC Code Rate Optimization 126
Quantum Effects in Accumulation Layers of Si-SiO2 Interfaces in the WKB Effective Mass Approximation 125
Statistical Methodologies for Integrated Circuits Design 125
Constant charge erasing scheme for Flash Memories 125
Fundamental variability limits of filament-based RRAM 125
Experimental Investigation of 4-kb RRAM Arrays Programming Conditions Suitable for TCAM 124
Bit error rate analysis in Charge Trapping memories for SSD applications 123
Hot Electrons in MOS Transistors: Lateral Distribution of the Trapped Oxide Charge 123
Electron trapping/detrapping within thin SiO2 films in the high field tunneling regime 122
Correlated Fluctuations and Noise Spectra of Tunneling and Substrate Currents Before Breakdown in Thin-Oxide MOS Devices 122
Is Consumer Electronics Redesigning Our Cars?: Challenges of Integrated Technologies for Sensing, Computing, and Storage 121
Characterization of the interface-driven 1st Reset operation in HfO2-based 1T1R RRAM devices 121
Threshold voltage spread in Flash memories under a constant DQ erasing scheme 120
Erratic bits in flash memories under Fowler-Nordheim programming 118
A BIST Scheme for Non-Volatile Memories 118
Electrical characterization of read window in reram arrays under different SET/RESET cycling conditions 118
Empirical investigation of SET Seasoning Effects in Phase Change Memory arrays 117
Quantum effects in accumulated MOS thin dielectric structures 116
A statistical model of Erratic Erase based on an automated Random Telegraph Signal characterization technique 116
Power-supply impact on the reliability of mid-1X TLC NAND flash memories 115
Simulation of SSD’s power consumption 115
Analysis of reliability/performance trade-off in Solid State Drives 115
Reliability and performance characterization of a mems-based non-volatile switch 114
Reliability of 3D NAND Flash Memories 114
Correlating Power Efficiency and Lifetime to Programming Strategies in RRAM-Based FPGAs 114
Cell-to-cell Fundamental Variability Limits Investigation in OxRRAM arrays 113
A Probabilistic Fault Model for “Analog” Faults in Digital CMOS Circuits 113
Low-Frequency Noise in Silicon-Gate Metal-Oxide-Silicon Capacitors Before Oxide Breakdown 112
Reliability of erasing operation in NOR-Flash memories 112
Dielectric reliability for future logic and Non-Volatile Memory applications: a statistical simulation analysis approach 112
Architectural and Integration Options for 3D NAND Flash Memories 112
Limits of sensing and storage electronic components for high-reliable and safety-critical automotive applications 112
Analysis of Edge Wordline Disturb in Multimegabit Charge Trapping Flash NAND arrays 111
SSDExplorer: A virtual platform for fine-grained design space exploration of Solid State Drives 111
Erratic Bits Classification for Efficient Repair Strategies in Automotive Embedded Flash Memories 111
Characterization of a MEMS-based embedded non volatile memory array for extreme environments 111
Fault Simulation for General FCMOS ICs 110
Impact of short SET pulse sequence on Electronic Switching in Phase Change Memory arrays 110
SSDExplorer: A virtual platform for SSD simulations 110
Two-Dimensional Effects in Hot-Electron Modified MOSFET's 109
Non Volatile Memory Partitioning Scheme for Technology-based Performance-Reliability Trade-off 109
A new failure mode of very thin (< 50 A) Thermal SiO2 Films 109
Modeling the Endurance Reliability of Intra-disk RAID Solutions for mid-1X TLC NAND Flash Solid State Drives 109
Testing of E2PROM Aging and Endurance: a Case Study 108
A Statistical Model of Erratic Behaviors in Flash Memory Arrays 108
Statistical analysis of resistive switching characteristics in ReRAM test arrays 108
Simulations of RRAM-based SSDs 108
Improving performance and reliability of NOR-Flash arrays by using pulsed operation 107
High-Field-Induced Voltage-Dependent Oxide-Charge 107
Resistive RAM technology for SSDs 107
Aliasing in Signature Analysis Testing with Multiple-Input Shift-Registers 106
Cross-Temperature Effects of Program and Read Operations in 2D and 3D NAND Flash Memories 106
LDPC Soft Decoding with Improved Performance in 1X-2X MLC and TLC NAND Flash-Based Solid State Drives 106
Evidence of the Role of Defects Near the Injecting Interface in Determining SiO2 Breakdown 106
Set of electrical characteristic parameters suitable for reliability analysis of multimegabit Phase Change Memory arrays 105
Testability Measures in Pseudorandom Testing 105
An Analytical Model for the Aliasing Probability in Signature Analysis Testing 104
A New Methodology for Two Level Random-Telegraph-Noise Identification and Statistical Analysis 104
Multilevel HfO2-based RRAM devices for low-power neuromorphic networks 104
Temperature Dependence of Fowler-Nordheim Injection from Accumulated n-type Silicon into Silicon Dioxide 104
Analysis of Resistive Bridging Fault Detection in BiCMOS Digital ICs 103
Transient simulation of the erase cycle of floating gate EEPROMs 103
Dynamics of Fast-Erasing Bits in Flash Memories 103
Reliability Evaluation of Combinational Logic Circuits by Symbolic Simulation 103
Design of CMOS Checkers with Improved Testability of Bridging and Transistor Stuck-on Faults 103
Fault Simulation of Parametric Bridging Faults in CMOS ICs 103
Impact of Tunnel Oxide Thickness on Erratic Erase in Flash Memories 103
Erratic bits in Flash memories under Fowler-Nordheim programming 102
Self-Learning Signature analysis for non-volatile memory testing 102
Statistical Modeling of Secondary Path during Erase Operation in Phase Change Memories 102
Totale 14.313
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Categoria #
all - tutte 88.527
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 6.989
Totale 95.516
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20203.380 0 0 0 0 405 571 534 503 477 506 215 169
2020/20213.545 317 322 224 366 168 458 201 388 103 539 279 180
2021/20222.125 106 146 157 44 169 126 126 107 116 166 199 663
2022/20231.755 207 17 82 183 230 289 174 167 213 10 139 44
2023/2024721 105 108 21 28 50 38 27 51 17 24 10 242
2024/20251.080 92 181 356 55 396 0 0 0 0 0 0 0
Totale 21.645