OLIVO, Piero
 Distribuzione geografica
Continente #
NA - Nord America 19.847
AS - Asia 8.989
EU - Europa 6.501
SA - Sud America 1.456
Continente sconosciuto - Info sul continente non disponibili 340
AF - Africa 217
OC - Oceania 6
AN - Antartide 1
Totale 37.357
Nazione #
US - Stati Uniti d'America 19.268
SG - Singapore 3.341
CN - Cina 2.402
PL - Polonia 2.061
BR - Brasile 1.158
IT - Italia 992
VN - Vietnam 879
HK - Hong Kong 847
UA - Ucraina 799
DE - Germania 697
GB - Regno Unito 639
TR - Turchia 509
CA - Canada 321
FR - Francia 272
FI - Finlandia 255
SE - Svezia 251
JP - Giappone 211
RU - Federazione Russa 205
MX - Messico 163
IN - India 149
BD - Bangladesh 123
ID - Indonesia 108
AR - Argentina 103
NL - Olanda 98
ZA - Sudafrica 89
ES - Italia 59
IQ - Iraq 55
KR - Corea 53
CO - Colombia 52
PK - Pakistan 45
EC - Ecuador 42
AT - Austria 38
VE - Venezuela 36
TW - Taiwan 35
MA - Marocco 31
BE - Belgio 29
UZ - Uzbekistan 26
MY - Malesia 25
CR - Costa Rica 22
PH - Filippine 22
PY - Paraguay 22
CL - Cile 20
SA - Arabia Saudita 20
TN - Tunisia 19
JO - Giordania 18
NP - Nepal 18
JM - Giamaica 16
KE - Kenya 16
AE - Emirati Arabi Uniti 15
LT - Lituania 15
IL - Israele 14
CZ - Repubblica Ceca 13
EG - Egitto 12
GT - Guatemala 12
IE - Irlanda 12
AZ - Azerbaigian 11
DO - Repubblica Dominicana 11
DZ - Algeria 11
BO - Bolivia 10
CH - Svizzera 10
LB - Libano 10
SN - Senegal 10
HN - Honduras 9
IS - Islanda 9
KZ - Kazakistan 9
PE - Perù 9
ET - Etiopia 8
AL - Albania 6
AU - Australia 6
EU - Europa 6
GR - Grecia 6
NI - Nicaragua 6
OM - Oman 6
AO - Angola 5
KG - Kirghizistan 5
PA - Panama 5
PS - Palestinian Territory 5
SY - Repubblica araba siriana 5
TH - Thailandia 5
GD - Grenada 4
HU - Ungheria 4
PT - Portogallo 4
RO - Romania 4
TT - Trinidad e Tobago 4
AM - Armenia 3
BA - Bosnia-Erzegovina 3
GE - Georgia 3
LV - Lettonia 3
MK - Macedonia 3
RS - Serbia 3
XK - ???statistics.table.value.countryCode.XK??? 3
BB - Barbados 2
BG - Bulgaria 2
CI - Costa d'Avorio 2
EE - Estonia 2
GH - Ghana 2
GY - Guiana 2
IR - Iran 2
KW - Kuwait 2
MU - Mauritius 2
Totale 36.994
Città #
Fairfield 2.175
Singapore 2.134
Warsaw 2.052
Ashburn 1.796
Woodbridge 1.738
Houston 1.306
San Jose 1.242
Seattle 901
Santa Clara 870
Jacksonville 856
Hong Kong 816
Ann Arbor 775
Wilmington 766
Cambridge 737
Beijing 730
Chandler 622
Council Bluffs 452
Izmir 320
Ho Chi Minh City 317
Ferrara 311
Nanjing 281
Milan 215
Hanoi 213
Los Angeles 204
Princeton 197
Tokyo 196
Addison 190
San Diego 182
Lauterbourg 174
Dallas 160
New York 147
The Dalles 138
Munich 136
Boardman 123
Mexico City 116
Mcallen 113
London 109
Montréal 108
São Paulo 106
Shanghai 100
Chicago 98
Helsinki 88
Nanchang 81
Shenyang 79
Ottawa 76
Orem 67
Jakarta 65
Changsha 63
Dearborn 60
Tianjin 58
Hefei 53
Jiaxing 53
Moscow 52
Brooklyn 51
Phoenix 51
Hebei 50
Atlanta 48
Amsterdam 45
Johannesburg 45
Settimo Milanese 44
Chennai 42
Da Nang 41
Montreal 39
Redwood City 39
San Mateo 39
San Francisco 38
Toronto 38
Denver 37
Rio de Janeiro 37
Falls Church 36
Hangzhou 36
Haiphong 34
Stockholm 34
Norwalk 33
Jinan 32
Manchester 32
Columbus 31
Frankfurt am Main 31
Boston 30
Brasília 29
Des Moines 29
Vienna 29
Poplar 28
Auburn Hills 27
Bologna 27
Mountain View 26
Brussels 25
Falkenstein 25
Washington 23
Belo Horizonte 22
Guangzhou 22
Rome 22
Tashkent 22
Frankfurt An Der Oder 21
Napoli 21
Baghdad 20
Dhaka 20
Zhengzhou 20
Ningbo 19
Nuremberg 19
Totale 26.526
Nome #
Performance and reliability comparison of 1T-1R RRAM arrays with amorphous and polycrystalline HfO2 512
Electrical characterization and modeling of 1T-1R RRAM arrays with amorphous and poly-crystalline HfO2 508
RRAM Reliability/Performance Characterization through Array Architectures Investigations 480
Reduction of the Cell-to-Cell Variability in Hf1-xAlxOy Based RRAM Arrays by Using Program Algorithms 429
Impact of temperature on conduction mechanisms and switching parameters in HfO2-based 1T-1R resistive random access memories devices 427
Automated characterization of TAS-MRAM test arrays 420
Implications of the Incremental Pulse and Verify Algorithm on the Forming and Switching Distributions in RERAM Arrays 419
Assessing the forming temperature role on amorphous and polycrystalline HfO2-based 4 kbit RRAM arrays performance 413
Relationship among Current Fluctuations during Forming, Cell-To-Cell Variability and Reliability in RRAM Arrays 394
Reliability and Cell-to-Cell Variability of TAS-MRAM arrays under cycling conditions 377
Radiation hard design of HfO2 based 1T1R cells and memory arrays 375
Electrical characterization and modeling of pulse-based forming techniques in RRAM arrays 366
SSDExplorer: a Virtual Platform for Performance/Reliability-oriented Fine-Grained Design Space Exploration of Solid State Drives 335
Impact of Intercell and Intracell Variability on Forming and Switching Parameters in RRAM Arrays 318
Solid-State Drives: Memory Driven Design Methodologies for Optimal Performance 307
Simulations of the software-defined flash 265
Quality of Service implications of Enhanced Program Algorithms for Charge Trapping NAND in future Solid State Drives 260
Experimental Investigation of 4-kb RRAM Arrays Programming Conditions Suitable for TCAM 256
System interconnect extensions for fully transparent demand paging in low-cost MMU-less embedded systems 251
LDPC Soft Decoding with Reduced Power and Latency in 1X-2X NAND Flash-Based Solid State Drives 251
A statistical model of Erratic Erase based on an automated Random Telegraph Signal characterization technique 245
Architectural and Integration Options for 3D NAND Flash Memories 243
Performance and Reliability Analysis of Cross-Layer Optimizations of NAND Flash Controllers 242
Impact of the Incremental Programming Algorithm on the Filament Conduction in HfO2-Based RRAM Arrays 241
LDPC Soft Decoding with Improved Performance in 1X-2X MLC and TLC NAND Flash-Based Solid State Drives 239
A Probabilistic Fault Model for “Analog” Faults in Digital CMOS Circuits 238
A cross-layer approach for new reliability-performance trade-offs in MLC NAND flash memories 232
A Statistical Model of Erratic Behaviors in Flash Memory Arrays 228
Reliability challenges in 3D NAND Flash memories 227
Analysis of Edge Wordline Disturb in Multimegabit Charge Trapping Flash NAND arrays 226
Constant charge erasing scheme for Flash Memories 225
Data retention investigation in Al:HfO 2 -based resistive random access memory arrays by using high-Temperature accelerated tests 223
Analysis of reliability/performance trade-off in Solid State Drives 222
Fundamental variability limits of filament-based RRAM 221
A Compact Model for Erratic Event Simulation in Flash Memory Arrays 219
Mechanism of the Key Impact of Residual Carbon Content on the Reliability of Integrated Resistive Random Access Memory Arrays 219
An automated test equipment for characterization of emerging MRAM and RRAM arrays 219
A new automated methodology for Random Telegraph Signal identification and characterization: a case study on Phase Change Memory arrays 218
Simulation of SSD’s power consumption 218
Dielectric reliability for future logic and Non-Volatile Memory applications: a statistical simulation analysis approach 217
Erratic bits in flash memories under Fowler-Nordheim programming 216
Overerase Phenomena: An Insight into Flash memory Reliability 216
A New Analytical Model of the Erasing Operation in Phase Change Memories 212
A new failure mode of very thin (< 50 A) Thermal SiO2 Films 212
A BIST Scheme for Non-Volatile Memories 211
Advanced Electrical-Level Modeling of EEPROM Cells 210
Correlating Power Efficiency and Lifetime to Programming Strategies in RRAM-Based FPGAs 209
Aliasing in Signature Analysis Testing with Multiple-Input Shift-Registers 208
A New Methodology for Two Level Random-Telegraph-Noise Identification and Statistical Analysis 208
Threshold voltage spread in Flash memories under a constant DQ erasing scheme 207
Cross-Temperature Effects of Program and Read Operations in 2D and 3D NAND Flash Memories 207
Statistical Methodologies for Integrated Circuits Design 206
Analysis and Optimization of Erasing Waveform in Phase Change Memory Arrays 206
An Analytical Model for the Aliasing Probability in Signature Analysis Testing 205
Characterization of TLC 3D-NAND Flash Endurance through Machine Learning for LDPC Code Rate Optimization 204
Characterization of the interface-driven 1st Reset operation in HfO2-based 1T1R RRAM devices 204
Reliability of 3D NAND Flash Memories 203
An energy-efficient in-memory computing architecture for survival data analysis based on resistive switching memories 202
Impact of Pulsed Operation on Performance and Reliability of Flash Memories 201
Electrical characterization of read window in reram arrays under different SET/RESET cycling conditions 201
Characterization of the Over-Erase Algorithm in FN/FN embedded NOR Flash arrays 201
Is Consumer Electronics Redesigning Our Cars?: Challenges of Integrated Technologies for Sensing, Computing, and Storage 198
Bit error rate analysis in Charge Trapping memories for SSD applications 195
Resistive RAM technology for SSDs 194
Cell-to-cell Fundamental Variability Limits Investigation in OxRRAM arrays 194
Impact of the NAND Flash Power Supply on Solid State Drives Reliability and Performance 194
Power-supply impact on the reliability of mid-1X TLC NAND flash memories 193
Empirical investigation of SET Seasoning Effects in Phase Change Memory arrays 193
Erratic bits in Flash memories under Fowler-Nordheim programming 192
SSDExplorer: A virtual platform for fine-grained design space exploration of Solid State Drives 192
A Novel Critical Path Heuristic for Fast Fault Grading 191
Analysis of Erratic Bits in FLASH Memories 189
Hot Electrons in MOS Transistors: Lateral Distribution of the Trapped Oxide Charge 188
Characterization of flash structures erased with ultra-short pulses 187
Reliability and performance characterization of a mems-based non-volatile switch 187
Characterization of a MEMS-based embedded non volatile memory array for extreme environments 186
Automated Test Equipment for research on Non volatile memories 185
Electron trapping/detrapping within thin SiO2 films in the high field tunneling regime 184
Quantum Effects in Accumulation Layers of Si-SiO2 Interfaces in the WKB Effective Mass Approximation 184
Dynamics of Fast-Erasing Bits in Flash Memories 184
Simulations of RRAM-based SSDs 183
Erratic Bits Classification for Efficient Repair Strategies in Automotive Embedded Flash Memories 182
SSDExplorer: A virtual platform for SSD simulations 182
Affidabilità di sistemi wireless 181
Limits of sensing and storage electronic components for high-reliable and safety-critical automotive applications 181
Correlated Fluctuations and Noise Spectra of Tunneling and Substrate Currents Before Breakdown in Thin-Oxide MOS Devices 181
Advanced spice-like modeling of E2PROM cells 180
Correlation between IDDQ Testing Quality and Sensor Accuracy 180
Threshold voltage spread in Flash memories under a constant DQ erasing scheme 178
Analysis of Erratic Bits in Flash Memories 178
Modeling the Endurance Reliability of Intra-disk RAID Solutions for mid-1X TLC NAND Flash Solid State Drives 178
Impact of the precursor chemistry and process conditions on the cell-to-cell variability in 1T-1R based HfO2 RRAM devices 177
Design trade-offs for NAND flash-based SSDs 176
Non Volatile Memory Partitioning Scheme for Technology-based Performance-Reliability Trade-off 175
Testing of E2PROM Aging and Endurance: a Case Study 174
Memory driven design methodologies for optimal SSD performance 174
Effect of field enhancement due to the coupling between a cellular phone and metallic eyeglasses 174
Two-Dimensional Effects in Hot-Electron Modified MOSFET's 173
Impact of short SET pulse sequence on Electronic Switching in Phase Change Memory arrays 173
Reliability of erasing operation in NOR-Flash memories 173
Totale 23.437
Categoria #
all - tutte 161.963
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 13.038
Totale 175.001


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.873 0 0 157 44 169 126 126 107 116 166 199 663
2022/20231.755 207 17 82 183 230 289 174 167 213 10 139 44
2023/2024721 105 108 21 28 50 38 27 51 17 24 10 242
2024/20254.159 92 181 356 55 451 503 181 316 487 574 653 310
2025/202611.225 924 546 989 1.471 1.773 692 1.315 566 1.106 1.273 368 202
2026/20271.408 311 619 478 0 0 0 0 0 0 0 0 0
Totale 37.357