The impact of 500k write cycles on 1kbits TAS-MRAM arrays has been evaluated by extracting a set of characteristic parameters describing the technology in terms of cell-to-cell variability and switching reliability. The relationship between switching voltages and cell resistances has been investigated in order to define the most reliable working conditions.
|Titolo:||Reliability and cell-to-cell variability of TAS-MRAM arrays under cycling conditions|
|Data di pubblicazione:||2015|
|Appare nelle tipologie:||04.2 Contributi in atti di convegno (in Volume)|