The fluctuations of the tunnel and substrate currents in thin-oxide MOS devices biased at high fields have been investigated. It has been shown that both the currents are characterized by multi-level random fluctuations which are sometimes correlated. The correlation is complete before breakdown. © 1990 IEEE
Correlated Fluctuations and Noise Spectra of Tunneling and Substrate Currents Before Breakdown in Thin-Oxide MOS Devices
OLIVO, Piero;
1990
Abstract
The fluctuations of the tunnel and substrate currents in thin-oxide MOS devices biased at high fields have been investigated. It has been shown that both the currents are characterized by multi-level random fluctuations which are sometimes correlated. The correlation is complete before breakdown. © 1990 IEEEFile in questo prodotto:
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