In this letter, we propose an effective route to reduce the cell-to-cell variability in 1T-1R-based random access memories (RRAM) arrays by combining the excellent switching performance of Hf1-xAlxOy with an optimized incremental step pulse with verify algorithm for programming. The strongly reduced cell-to-cell variability improves the thermal and post-programming stability of the arrays, which is relevant for many applications of the RRAM technology. Finally, the retention study at 150 °C enables the prediction of the data storage capability.
Titolo: | Reduction of the Cell-to-Cell Variability in Hf1-xAlxOy Based RRAM Arrays by Using Program Algorithms |
Autori: | |
Data di pubblicazione: | 2017 |
Rivista: | |
Handle: | http://hdl.handle.net/11392/2369299 |
Appare nelle tipologie: | 03.1 Articolo su rivista |
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EDL_HfAlO_postprint.pdf | Post-print | PUBBLICO - Pubblico con Copyright | Open Access Visualizza/Apri |
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