NAND Flash memories are complex systems that include many heterogeneous blocks that must work together to ensure a high reliability of the information storage. Many efforts in the reliability community are devoted to investigate the reliability-loss of this storage medium from a cell device physics point of view, whereas little importance is given to the other blocks that constitute such a system. In this work we present a reliability threat related to NAND Flash memories that is present on the high voltage circuitry of the memory: the dependence on the power supply. Through the experimental characterization of TLC mid-1X samples and thanks to the SPICE simulations of the high voltage blocks we have investigated the possible sources of this new reliability issue.
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|Titolo:||Power-supply impact on the reliability of mid-1X TLC NAND flash memories|
|Data di pubblicazione:||2016|
|Appare nelle tipologie:||04.2 Contributi in atti di convegno (in Volume)|