In this work the electrical performance of a Rad-Hard designed 1T-1R device based on the combination of an Enclosed Layout Transistor (ELT) and a TiN/HfO2/Ti/TiN based resistor is presented for the first time. Moreover, an architectural solution for 1Mbit radiation hard RRAM array implementation is proposed.

Radiation hard design of HfO2 based 1T1R cells and memory arrays

GROSSI, Alessandro;ZAMBELLI, Cristian;OLIVO, Piero;
2015

Abstract

In this work the electrical performance of a Rad-Hard designed 1T-1R device based on the combination of an Enclosed Layout Transistor (ELT) and a TiN/HfO2/Ti/TiN based resistor is presented for the first time. Moreover, an architectural solution for 1Mbit radiation hard RRAM array implementation is proposed.
2015
9781467392099
RRAM, Rad hard, HfO2, Reliability
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/2338672
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