This brief shows how the asymmetrical behavior of hot-electron modified MOSFET's with respect to swapping of source and drain is due to two-dimensional effects taking place within the transition region separating the device channel from the terminal junctions. In particular experimental data concerning enhanced threshold vltage shift, asymmetrical transconductance, anomalous body effect, as well as short-channel-like behavior exhibited by the stressed transistors, are presented and discussed. Copyright © 1983 by The Institute of Electrical and Electronics Engineers, Inc.
Two-Dimensional Effects in Hot-Electron Modified MOSFET's
OLIVO, Piero;
1983
Abstract
This brief shows how the asymmetrical behavior of hot-electron modified MOSFET's with respect to swapping of source and drain is due to two-dimensional effects taking place within the transition region separating the device channel from the terminal junctions. In particular experimental data concerning enhanced threshold vltage shift, asymmetrical transconductance, anomalous body effect, as well as short-channel-like behavior exhibited by the stressed transistors, are presented and discussed. Copyright © 1983 by The Institute of Electrical and Electronics Engineers, Inc.File in questo prodotto:
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