An accurate, yet simple method is given to evaluate electric potential and quantum levels in silicon accumulation layers particularly suitable for implementation in the numerical analysis of the tunneling processes in MOS (metal‐oxide‐semiconductor) structures under general conditions. The procedure makes use of the WKB (Wentzel‐Kramers‐Brillouin) approximation for the electron wave functions: Poisson's equation is then expressed in a purely integral form solved by the Ritz method (i.e. by parametrized functions). A simplified procedure, which generalizes a one‐level model is also given. It is shown that it can give a fairly accurate estimate of the accumulation layer ground state, provided the effects of a sufficient number of subbands are taken into account. Copyright © 1985 WILEY‐VCH Verlag GmbH & Co. KGaA
Quantum Effects in Accumulation Layers of Si-SiO2 Interfaces in the WKB Effective Mass Approximation
OLIVO, Piero
1985
Abstract
An accurate, yet simple method is given to evaluate electric potential and quantum levels in silicon accumulation layers particularly suitable for implementation in the numerical analysis of the tunneling processes in MOS (metal‐oxide‐semiconductor) structures under general conditions. The procedure makes use of the WKB (Wentzel‐Kramers‐Brillouin) approximation for the electron wave functions: Poisson's equation is then expressed in a purely integral form solved by the Ritz method (i.e. by parametrized functions). A simplified procedure, which generalizes a one‐level model is also given. It is shown that it can give a fairly accurate estimate of the accumulation layer ground state, provided the effects of a sufficient number of subbands are taken into account. Copyright © 1985 WILEY‐VCH Verlag GmbH & Co. KGaAI documenti in SFERA sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
