In this work, a comparison between 1T-1R RRAM 4kbits arrays manufactured either with amorphous or polycrystalline HfO2 in terms of performance, reliability, Set/Reset operations energy requirements, intra-cell and inter-cell variability during 10k Set/Reset cycles is reported. Polycrystalline array shows higher current ratio, lower switching voltages, lower power consumption, minor endurance degradation and higher overall yield than amorphous array. The drawbacks are represented by the higher Forming voltage, the larger read current distribution after Forming and the higher Reset voltage dispersion.
|Titolo:||Performance and reliability comparison of 1T-1R RRAM arrays with amorphous and polycrystalline HfO2|
|Data di pubblicazione:||2016|
|Appare nelle tipologie:||04.2 Contributi in atti di convegno (in Volume)|