Hot Electrons in MOS Transistors: Lateral Distribution of the Trapped Oxide Charge

The spatial distribution (along the channel) of the oxide-trapped charge induced by hot electron injection in MOS transistors biased in saturation, is studied by means of two-dimensional device simulators. It is shown that hot electron trapping leads to a charge almost uniformly distributed over the region included between the points of channel pinch-off and zero transversal component of the surface electric field. A simplified analytic expression for the drain current in the triode operating region of the HE modified transistor is also given and found to be in reasonable agreement with experimental curves. Copyright © 1982 by The Institute of Electrical and Electronics Engineers, Inc.