Conventional modeling of floating-gate EEPROM cells is shown to be inadequate to correctly evaluate the tunnel current flowing through the MOS injector during programming, essentially because of relevant quantum phenomena taking place at the cathode semiconductor-oxide interface. An electrical-level model is developed and discussed incorporating numerical analysis of such effects. The model is validated by comparing results of the simulations with experimental data obtained with EEPROM cells. The model of the MOS injector has been implemented in the circuit simulator SPICE. © 1993 IEEE
Advanced Electrical-Level Modeling of EEPROM Cells
OLIVO, Piero;
1993
Abstract
Conventional modeling of floating-gate EEPROM cells is shown to be inadequate to correctly evaluate the tunnel current flowing through the MOS injector during programming, essentially because of relevant quantum phenomena taking place at the cathode semiconductor-oxide interface. An electrical-level model is developed and discussed incorporating numerical analysis of such effects. The model is validated by comparing results of the simulations with experimental data obtained with EEPROM cells. The model of the MOS injector has been implemented in the circuit simulator SPICE. © 1993 IEEEFile in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in SFERA sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
