In this paper we present a new analytical model of the erasing operation in Phase Change Memories (PCM). The model successfully describes the dynamics of the erasing curves of PCM arrays in terms of a filamentation picture of the electronic switching process. We also suggest a physical link between the crystalline fraction concept and the filamentation properties, thus providing a deeper comprehension of the underlying physics. The model is able to take into account both technological and architectural parameters and it is suitable for statistical analysis of PCM arrays.
A New Analytical Model of the Erasing Operation in Phase Change Memories
CHIMENTON, Andrea;ZAMBELLI, Cristian;OLIVO, Piero
2010
Abstract
In this paper we present a new analytical model of the erasing operation in Phase Change Memories (PCM). The model successfully describes the dynamics of the erasing curves of PCM arrays in terms of a filamentation picture of the electronic switching process. We also suggest a physical link between the crystalline fraction concept and the filamentation properties, thus providing a deeper comprehension of the underlying physics. The model is able to take into account both technological and architectural parameters and it is suitable for statistical analysis of PCM arrays.File in questo prodotto:
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