In this paper we present a new analytical model of the erasing operation in Phase Change Memories (PCM). The model successfully describes the dynamics of the erasing curves of PCM arrays in terms of a filamentation picture of the electronic switching process. We also suggest a physical link between the crystalline fraction concept and the filamentation properties, thus providing a deeper comprehension of the underlying physics. The model is able to take into account both technological and architectural parameters and it is suitable for statistical analysis of PCM arrays.
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