In this work, cells behavior during forming is monitored through an incremental pulse and verify algorithm on 4kbit RRAM arrays. This technique allows recognising different cell behaviors in terms of read-verify current oscillation: the impact of these oscillations on reliability and cell-to-cell variability has been investigated during 1k endurance cycles and 100k pulse stress under a variety of cycling conditions. Conductance histograms for the post-forming current reveal the nanosized nature of the filamentary paths across the dielectric film.
|Titolo:||Relationship among Current Fluctuations during Forming, Cell-To-Cell Variability and Reliability in RRAM Arrays|
|Data di pubblicazione:||2015|
|Appare nelle tipologie:||04.2 Contributi in atti di convegno (in Volume)|