This work presents experimental results concerning erratic behaviors in flash memories obtained by tracking the threshold voltage dynamics during any single erase operation and providing a deeper insight into their physical nature. The particular shape of the experimental erase curves allows the derivation of a nearly linear relationship between the amplitude of erratic threshold shifts and the equivalent barrier height controlling Fowler-Nordheim injection

Analysis of Erratic Bits in FLASH Memories

CHIMENTON, Andrea;PELLATI, Paolo;OLIVO, Piero
2001

Abstract

This work presents experimental results concerning erratic behaviors in flash memories obtained by tracking the threshold voltage dynamics during any single erase operation and providing a deeper insight into their physical nature. The particular shape of the experimental erase curves allows the derivation of a nearly linear relationship between the amplitude of erratic threshold shifts and the equivalent barrier height controlling Fowler-Nordheim injection
2001
Chimenton, Andrea; Pellati, Paolo; Olivo, Piero
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/1198601
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