We present a statistical model of erratic behaviors in Flash memory arrays based on a Markov chain model. The model parameters are experimentally evaluated through short program/erase cycling characterizations. The model is suitable for Monte Carlo simulations of Flash memory arrays through which the presence of tail bits in the threshold voltage distribution can be correctly predicted. Finally, an application to NAND architectures is discussed in relation to overprogramming issue
A Statistical Model of Erratic Behaviors in Flash Memory Arrays
CHIMENTON, Andrea;ZAMBELLI, Cristian;OLIVO, Piero
2011
Abstract
We present a statistical model of erratic behaviors in Flash memory arrays based on a Markov chain model. The model parameters are experimentally evaluated through short program/erase cycling characterizations. The model is suitable for Monte Carlo simulations of Flash memory arrays through which the presence of tail bits in the threshold voltage distribution can be correctly predicted. Finally, an application to NAND architectures is discussed in relation to overprogramming issueFile in questo prodotto:
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