SFERA Archivio dei prodotti della Ricerca dell'Università di Ferrara

VANNINI, Giorgio
 Distribuzione geografica
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Continente #
NA - Nord America 21.493
AS - Asia 10.903
EU - Europa 5.112
SA - Sud America 2.056
Continente sconosciuto - Info sul continente non disponibili 360
AF - Africa 231
OC - Oceania 18
Totale 40.173
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Nazione #
US - Stati Uniti d'America 21.097
SG - Singapore 4.086
CN - Cina 2.706
BR - Brasile 1.628
UA - Ucraina 1.168
HK - Hong Kong 1.093
VN - Vietnam 1.083
IT - Italia 1.055
TR - Turchia 734
DE - Germania 669
GB - Regno Unito 529
SE - Svezia 324
FR - Francia 313
JP - Giappone 309
FI - Finlandia 288
RU - Federazione Russa 272
PL - Polonia 245
MX - Messico 192
IN - India 186
BD - Bangladesh 159
AR - Argentina 146
CA - Canada 136
ID - Indonesia 96
IQ - Iraq 82
EC - Ecuador 73
ZA - Sudafrica 73
VE - Venezuela 62
CO - Colombia 58
PK - Pakistan 53
UZ - Uzbekistan 44
NL - Olanda 43
ES - Italia 41
MA - Marocco 36
TN - Tunisia 31
MY - Malesia 29
SA - Arabia Saudita 28
CL - Cile 27
LT - Lituania 27
PH - Filippine 27
AE - Emirati Arabi Uniti 25
AT - Austria 23
JO - Giordania 23
KE - Kenya 22
TW - Taiwan 20
IE - Irlanda 19
OM - Oman 19
EG - Egitto 18
NP - Nepal 17
UY - Uruguay 17
AZ - Azerbaigian 16
BE - Belgio 16
CZ - Repubblica Ceca 16
DZ - Algeria 15
PY - Paraguay 15
AU - Australia 14
BO - Bolivia 14
JM - Giamaica 14
PE - Perù 14
CR - Costa Rica 12
KR - Corea 12
KZ - Kazakistan 11
CH - Svizzera 10
ET - Etiopia 8
IL - Israele 7
LY - Libia 7
AL - Albania 6
DO - Repubblica Dominicana 6
GT - Guatemala 6
HN - Honduras 6
LB - Libano 6
RO - Romania 6
SI - Slovenia 6
BG - Bulgaria 5
RS - Serbia 5
SV - El Salvador 5
BB - Barbados 4
DK - Danimarca 4
KG - Kirghizistan 4
MD - Moldavia 4
NZ - Nuova Zelanda 4
PS - Palestinian Territory 4
PT - Portogallo 4
SN - Senegal 4
A2 - ???statistics.table.value.countryCode.A2??? 3
CI - Costa d'Avorio 3
CY - Cipro 3
GE - Georgia 3
HR - Croazia 3
LV - Lettonia 3
PA - Panama 3
TT - Trinidad e Tobago 3
AO - Angola 2
BA - Bosnia-Erzegovina 2
BH - Bahrain 2
EU - Europa 2
GR - Grecia 2
KH - Cambogia 2
LR - Liberia 2
MM - Myanmar 2
MN - Mongolia 2
Totale 39.783
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Città #
Singapore 2.422
Fairfield 2.310
Woodbridge 2.260
Ashburn 2.184
Houston 1.554
Jacksonville 1.291
Hong Kong 1.076
San Jose 962
Ann Arbor 918
Chandler 889
Seattle 866
Wilmington 792
Cambridge 770
Santa Clara 690
Beijing 680
Ferrara 506
Nanjing 454
Dallas 445
Izmir 425
Ho Chi Minh City 336
Tokyo 300
Princeton 292
Hanoi 263
Warsaw 239
Lauterbourg 237
Los Angeles 226
Boardman 211
San Diego 184
Council Bluffs 144
Mexico City 143
São Paulo 135
Nanchang 118
Milan 108
New York 101
Shenyang 98
Tianjin 92
Shanghai 89
Chicago 85
Dearborn 84
Hebei 84
Hefei 83
Moscow 78
The Dalles 75
Jiaxing 67
Addison 66
Washington 61
Changsha 56
London 56
Da Nang 55
Haiphong 51
Bologna 48
Toronto 48
San Francisco 46
Mountain View 45
Orem 45
Rio de Janeiro 45
Norwalk 43
Jinan 41
Brooklyn 40
Stockholm 39
Kunming 37
Columbus 36
Tashkent 36
Chennai 35
Helsinki 35
Montreal 34
Dong Ket 33
Manchester 33
Belo Horizonte 32
Johannesburg 32
Redwood City 32
Zhengzhou 32
Denver 31
Baghdad 30
Jakarta 30
Curitiba 29
Quito 29
Atlanta 28
Ningbo 28
Brasília 27
Des Moines 27
Falkenstein 27
Guangzhou 27
San Mateo 27
Frankfurt am Main 26
Salt Lake City 26
Amsterdam 24
Ankara 24
Rome 24
Auburn Hills 23
Düsseldorf 23
Amman 22
Caracas 22
Falls Church 22
Guayaquil 22
Campinas 21
Charlotte 21
Porto Alegre 21
Boston 20
Hải Dương 20
Totale 27.259
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Nome #
Dynamic-Bias S-Parameters: A New Measurement Technique for Microwave Transistors 369
A New Dynamic-Bias Measurement Setup for Nonlinear Transistor Model Identification 297
GaN HEMT Noise Model Based on Electromagnetic Simulations 285
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 279
10 Watt High Efficiency GaAs MMIC Power Amplifier for Space Applications 271
A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique 230
A new approach to Class-E power amplifier design 224
Neural approach for temperature-dependent modeling of GaN HEMTs 221
A procedure for the extraction of a nonlinear microwave GaN FET model 218
Empirical modeling of low-frequency dispersive effects due to traps and thermal phenomena in III-V FETs 211
Accurate GaN HEMT nonquasi-static large-signal model including dispersive effects 208
A computationally efficient approach for the design of RF power amplifiers 208
GaN HEMT noise modeling based on 50-Ω noise factor 208
Microwave transistor modeling 208
A GaN power amplifier for 100 VDC bus in GPS L-band 208
A New Empirical Model for the Characterization of Low-Frequency Dispersive Effects in FET Electron Devices Accounting for Thermal Influence on the Trapping State 207
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems 207
A dual-source nonlinear measurement system oriented to the empirical characterization of low-frequency dispersion in microwave electron devices 204
A 110 GHz scalable FET model based on 50 GHz S-parameter measurements 204
75-VDC GaN technology investigation from a degradation perspective 203
Extremely low-frequency measurements using an active bias tee 202
A CLEAR-CUT UNDERSTANDING OF THE CURRENT-GAIN PEAK IN HEMTs: THEORY AND EXPERIMENTS 201
Experimental Investigation of LF dispersion and IMD asymmetry within GaN based HEMT technology 199
Solid-state RF power amplifiers for ISM CW applications based on 100 V GaN technology 199
A distributed approach for millimetre-wave electron device modelling 198
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance 198
Identification of the optimum operation for GaN HEMTs in high-power amplifiers 197
A finite-memory nonlinear model for microwave electron devices 197
Breakdown Walkout Investigation in Electron Devices Under Nonlinear Dynamic Regime 194
X-Band GaN Power Amplifier for Future Generation SAR Systems 194
Linear versus nonlinear de-embedding: Experimental investigation 192
High-Efficiency Broadband Power Amplifier Design Technique Based on a Measured-Load-Line Approach 192
Behavioral Modeling of GaN FETs: a Load-Line Approach 191
Waveform engineering: State-of-the-art and future trends (invited paper) 191
A Nonquasi-Static Empirical Model of Electron Devices 190
Evaluation of FET performance and restrictions by low-frequency measurements 190
Nonlinear embedding and de-embedding techniques for large-signal fet measurements 190
Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design 189
A Harmonic-Balance-oriented modeling approach for microwave electron devices 189
Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design 188
GaN HEMT large-signal model accounting for both low-frequency dispersion and high-frequency non-quasi-static effects 188
Kink Effect in S22 for GaN and GaAs HEMTs 187
On the evaluation of the high-frequency load line in active devices 186
"Hybrid" Approach to microwave power amplifier design 185
A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology 185
Technology-Independent Analysis of the Double Current-Gain Peak in Millimeter-Wave FETs 183
GaN Ku-band low-noise amplifier design including RF life test 182
A New Approach to Microwave Power Amplifier Design Based on the Experimental Characterization of the Intrinsic Electron-Device Load-line 181
Millimeter-Wave FET Nonlinear Modelling Based on the Dynamic-Bias Measurement Technique 180
A CAD tool for the small-signal stability analysis of MMIC power amplifiers 180
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design 180
Thermal characterization of high-power GaN HEMTs up to 65 GHz 179
Extraction of an Extrinsic Parasitic Network for Accurate mm-Wave FET Scalable Modeling on the Basis of Full-Wave EM Simulation 179
Evaluation of high-voltage transistor reliability under nonlinear dynamic operation 178
Modelling insight into the resonance frequencies of the microwave impedance parameters for GaAs HEMTs 177
An ultra-wideband sensing board for IoT 177
Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers 177
GaN HEMT model extraction based on dynamic-bias measurements 177
Microwave FET model identification based on vector intermodulation measurements 176
Characterization of GaN HEMT Low-Frequency Dispersion Through a Multi-Harmonic Measurement System 175
Comparison of Electron Device Models Based on Operation-specific Metrics 175
Microwave large-signal amplifier design using a quasi-black-box transistor model 175
Nonquasi-Static Large-Signal Model of GaN FETs through an Equivalent Voltage Approach 174
In-Deep Insight into the Extrinsic Capacitance Impact on GaN HEMT Modeling at Millimeter-Wave Band 174
Mathematical approaches to electron device modelling for non-linear microwave circuit design: state of the art and present trends 173
An Automated Measurement System for the Characterization of Electron Device Degradation under Nonlinear Dynamic Regime 173
Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements 172
Temperature Influence on GaN HEMT Equivalent Circuit 172
Characterization of charge-trapping effects in GaN FETs through low-frequency measurements 171
Waveforms-Based Large-Signal Identification of Transistor Models 170
A design method for parallel feed-back dielectric resonator oscillators 169
A Preliminary Study of Different Metrics for the Validation of Device and Behavioral Models 168
A New Millimeter Wave Small-Signal Modeling Approach for pHEMTs Accounting for the Output Conductance Time Delay 167
Scalable nonlinear FET model based on a distributed parasitic network description 167
Design of Low Phase Noise Dielectric Resonator Oscillators with GaInP HBT devices exploiting a Non-Linear Noise Model 167
A 48Watt and 60dB Gain Hybrid Power Line-Up Using a 0.35um GaAs pHEMT Process for an L-Band T/R Module of a space SAR Antenna 167
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design 167
Nonlinear modeling of InP devices for W-band applications 167
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data 167
Analysis of the gate current as a suitable indicator for FET degradation under nonlinear dynamic regime 167
Optimization of the solenoid valve behavior in common-rail injection systems 166
Accurate Nonlinear Electron Device Modelling for Cold FET Mixer Design 166
Power amplifier ACPR simulation using standard Harmonic balance tools 165
Temperature dependent vector large-signal measurements 165
A Small-Signal Parameter-Based Metric for Nonlinear Models of Electron Devices 165
Modeling the effects of traps on the IV-characteristics of GaAs MESFETs 164
Empirical Investigation on Time Dispersion of Microwave Electron Device Characteristics under Nonlinear Dynamic Operating Conditions 163
Nonlinear Deembedding of Microwave Large-Signal Measurements 163
Accurate Modeling of Electron Device I/V Characteristics Through a Simplified Large-Signal Measurement Setup 162
A New Technique for Thermal Resistance Measurement in Power Electron Devices 162
GaN power amplifier design exploiting wideband large-signal matching 161
Accurate PHEMT Nonlinear Modeling in the Presence of Low-Frequency Dispersive Effects 161
Nonlinear model for 40-GHz cold-FET operation 161
EM-based Modeling of Cascode FETs Suitable for MMIC Design 159
Accurate prediction of intermodulation distortion in GaAs MESFETs 158
Scalable Equivalent Circuit FET Model for MMIC Design Identified Through FW-EM-Analyses 158
Small-Signal Operation-Based Simplified Verification of Non-Linear Models for Millimeter-Wave Electron Devices 157
Modeling of non ideal dynamic characteristics in S/H-ADC devices 157
On-Wafer I/V measurement setup for the characterization of low-frequency dispersion in electron devices 157
Accurate prediction of PHEMT intermodulation distortion using the nonlinear discrete convolution model 156
Totale 18.791
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Categoria #
all - tutte 188.000
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 2.039
Totale 190.039
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20222.553 97 312 185 28 117 106 114 125 97 209 357 806
2022/20232.315 296 9 39 220 388 434 82 229 371 20 152 75
2023/20241.344 127 206 94 50 130 203 61 79 19 30 41 304
2024/20254.348 103 98 401 44 681 64 152 449 635 674 715 332
2025/202613.023 1.004 814 1.483 1.777 1.821 770 1.294 640 1.375 1.545 338 162
2026/2027375 375 0 0 0 0 0 0 0 0 0 0 0
Totale 40.173