SFERA Archivio dei prodotti della Ricerca dell'Università di Ferrara

VANNINI, Giorgio
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 15.904
EU - Europa 3.626
AS - Asia 2.219
OC - Oceania 12
Continente sconosciuto - Info sul continente non disponibili 5
SA - Sud America 5
AF - Africa 3
Totale 21.774
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 15.890
CN - Cina 1.489
UA - Ucraina 1.107
IT - Italia 788
TR - Turchia 663
DE - Germania 545
GB - Regno Unito 390
SE - Svezia 285
FI - Finlandia 245
PL - Polonia 187
VN - Vietnam 34
FR - Francia 27
AU - Australia 11
CA - Canada 11
HK - Hong Kong 8
KR - Corea 7
RU - Federazione Russa 7
BE - Belgio 6
NL - Olanda 6
TW - Taiwan 6
ES - Italia 5
RO - Romania 5
A2 - ???statistics.table.value.countryCode.A2??? 3
AT - Austria 3
BD - Bangladesh 3
BG - Bulgaria 3
BR - Brasile 3
IN - India 3
MD - Moldavia 3
MX - Messico 3
AR - Argentina 2
CH - Svizzera 2
CZ - Repubblica Ceca 2
DK - Danimarca 2
DZ - Algeria 2
EU - Europa 2
ID - Indonesia 2
IE - Irlanda 2
MY - Malesia 2
PT - Portogallo 2
HR - Croazia 1
IQ - Iraq 1
JP - Giappone 1
LT - Lituania 1
LU - Lussemburgo 1
LY - Libia 1
NZ - Nuova Zelanda 1
SI - Slovenia 1
Totale 21.774
Salva come PNG Salva come JPEG
Città #
Fairfield 2.310
Woodbridge 2.260
Houston 1.536
Ashburn 1.307
Jacksonville 1.288
Ann Arbor 918
Chandler 889
Seattle 853
Wilmington 786
Cambridge 770
Ferrara 465
Nanjing 451
Izmir 424
Princeton 291
Beijing 241
Boardman 202
Warsaw 187
San Diego 182
Nanchang 117
Shenyang 96
Hebei 84
Dearborn 83
Tianjin 77
Milan 75
Jiaxing 67
Shanghai 67
Addison 66
Changsha 51
Washington 46
Mountain View 45
Norwalk 42
Jinan 40
Kunming 36
Bologna 34
Dong Ket 33
Redwood City 32
Ningbo 28
Zhengzhou 28
San Mateo 27
Des Moines 26
London 24
Auburn Hills 23
Düsseldorf 23
Falls Church 22
Los Angeles 22
Indiana 18
Orange 17
Verona 17
Lanzhou 16
Settimo Milanese 16
Ferrara di Monte Baldo 14
Haikou 14
Tappahannock 14
Hangzhou 13
Philadelphia 13
Changchun 11
Guangzhou 9
Redmond 8
Taizhou 8
Helsinki 7
Hong Kong 7
New York 7
Toronto 7
Brussels 6
Chicago 6
Berlin 5
Chengdu 5
Kilburn 5
Prescot 5
San Francisco 5
Taipei 5
Bremen 4
Hounslow 4
Massapequa 4
Rome 4
Taiyuan 4
Tempe 4
Torino 4
Amsterdam 3
Andover 3
Chisinau 3
Fuzhou 3
Hefei 3
Melbourne 3
New Bedfont 3
New Orleans 3
Vicenza 3
Vienna 3
Walnut 3
Aci Catena 2
Cassino 2
Chiswick 2
Constantine 2
Cottbus 2
Garbagnate Milanese 2
Gavirate 2
Islington 2
Lappeenranta 2
Lucca 2
Lyngby 2
Totale 17.015
Salva come PNG Salva come JPEG
Nome #
Dynamic-Bias S-Parameters: A New Measurement Technique for Microwave Transistors 263
A New Dynamic-Bias Measurement Setup for Nonlinear Transistor Model Identification 175
GaN HEMT Noise Model Based on Electromagnetic Simulations 166
10 Watt High Efficiency GaAs MMIC Power Amplifier for Space Applications 164
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 164
Neural approach for temperature-dependent modeling of GaN HEMTs 159
A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique 139
Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design 131
A Harmonic-Balance-oriented modeling approach for microwave electron devices 130
A procedure for the extraction of a nonlinear microwave GaN FET model 129
Extremely Low-Frequency Measurements Using an Active Bias Tee 126
Millimeter-Wave FET Nonlinear Modelling Based on the Dynamic-Bias Measurement Technique 125
NONLINEAR EMBEDDING AND DE-EMBEDDING TECHNIQUES FOR LARGE-SIGNAL FET MEASUREMENTS 125
GaN HEMT noise modeling based on 50-Ω noise factor 123
Microwave transistor modeling 123
Experimental Investigation of LF dispersion and IMD asymmetry within GaN based HEMT technology 122
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance 120
Nonquasi-Static Large-Signal Model of GaN FETs through an Equivalent Voltage Approach 119
Modelling insight into the resonance frequencies of the microwave impedance parameters for GaAs HEMTs 119
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems 118
Behavioral Modeling of GaN FETs: a Load-Line Approach 117
Technology-Independent Analysis of the Double Current-Gain Peak in Millimeter-Wave FETs 117
A New Technique for Thermal Resistance Measurement in Power Electron Devices 116
X-Band GaN Power Amplifier for Future Generation SAR Systems 116
Temperature Influence on GaN HEMT Equivalent Circuit 116
GaN HEMT model extraction based on dynamic-bias measurements 115
Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design 114
Breakdown Walkout Investigation in Electron Devices Under Nonlinear Dynamic Regime 112
Optimization of the solenoid valve behavior in common-rail injection systems 111
A New Empirical Model for the Characterization of Low-Frequency Dispersive Effects in FET Electron Devices Accounting for Thermal Influence on the Trapping State 111
GaN HEMT large-signal model accounting for both low-frequency dispersion and high-frequency non-quasi-static effects 111
A Nonquasi-Static Empirical Model of Electron Devices 110
High-Efficiency Broadband Power Amplifier Design Technique Based on a Measured-Load-Line Approach 110
A computationally efficient approach for the design of RF power amplifiers 110
null 110
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design 110
EM-based Modeling of Cascode FETs Suitable for MMIC Design 109
In-Deep Insight into the Extrinsic Capacitance Impact on GaN HEMT Modeling at Millimeter-Wave Band 108
null 108
Linear versus nonlinear de-embedding: Experimental investigation 107
Mathematical approaches to electron device modelling for non-linear microwave circuit design: state of the art and present trends 106
A CLEAR-CUT UNDERSTANDING OF THE CURRENT-GAIN PEAK IN HEMTs: THEORY AND EXPERIMENTS 106
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data 106
A GaN power amplifier for 100 VDC bus in GPS L-band 106
A New Millimeter Wave Small-Signal Modeling Approach for pHEMTs Accounting for the Output Conductance Time Delay 105
A dual-source nonlinear measurement system oriented to the empirical characterization of low-frequency dispersion in microwave electron devices 105
Accurate Nonlinear Electron Device Modelling for Cold FET Mixer Design 105
Accurate GaN HEMT nonquasi-static large-signal model including dispersive effects 104
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design 104
A Small-Signal Parameter-Based Metric for Nonlinear Models of Electron Devices 104
Identification of the optimum operation for GaN HEMTs in high-power amplifiers 104
A new approach to Class-E power amplifier design 104
Accurate prediction of PHEMT intermodulation distortion using the nonlinear discrete convolution model 103
Characterization of GaN HEMT Low-Frequency Dispersion Through a Multi-Harmonic Measurement System 103
Kink Effect in S22 for GaN and GaAs HEMTs 103
GaN Ku-band low-noise amplifier design including RF life test 103
Evaluation of high-voltage transistor reliability under nonlinear dynamic operation 103
Scalable nonlinear FET model based on a distributed parasitic network description 102
Design of Low Phase Noise Dielectric Resonator Oscillators with GaInP HBT devices exploiting a Non-Linear Noise Model 102
Empirical modeling of low-frequency dispersive effects due to traps and thermal phenomena in III-V FETs 102
Modeling of non ideal dynamic characteristics in S/H-ADC devices 102
null 102
Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements 102
Accurate EM-Based Modeling of Cascode FETs 102
Small-Signal Operation-Based Simplified Verification of Non-Linear Models for Millimeter-Wave Electron Devices 101
Nonlinear modeling of InP devices for W-band applications 101
A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology 101
Electron Device Model Parameter Identification Through Large-Signal-Predictive Small-Signal-Based Error Functions 100
Millimeter-wave FET modeling using on-wafer measurements and EM simulation 100
null 100
“Hybrid” Approach to Microwave Power Amplifier Design 100
Microwave FET model identification based on vector intermodulation measurements 100
Evaluation of FET performance and restrictions by low-frequency measurements 100
Waveform engineering: State-of-the-art and future trends (invited paper) 100
A finite-memory nonlinear model for microwave electron devices 100
Nonlinear integral modeling of Dual-Gate GaAs MESFETs 100
null 100
An Automated Measurement System for the Characterization of Electron Device Degradation under Nonlinear Dynamic Regime 99
Temperature dependent vector large-signal measurements 99
Modelling of deviations between static and dynamic drain characteristics in GaAs FETs 99
GaN power amplifier design exploiting wideband large-signal matching 99
Small- Versus Large-Signal Extraction of Charge Models of Microwave FETs 99
Large-signal modelling of Dual-Gate GaAs MESFETs 99
Empirical Investigation on Time Dispersion of Microwave Electron Device Characteristics under Nonlinear Dynamic Operating Conditions 99
An ultra-wideband sensing board for IoT 99
A New Approach to Microwave Power Amplifier Design Based on the Experimental Characterization of the Intrinsic Electron-Device Load-line 99
A nonlinear integral model of electron devices for HB circuit analysis 98
A distributed approach for millimetre-wave electron device modelling 98
Nonlinear model for 40-GHz cold-FET operation 98
Nonlinear Deembedding of Microwave Large-Signal Measurements 98
Extraction of an Extrinsic Parasitic Network for Accurate mm-Wave FET Scalable Modeling on the Basis of Full-Wave EM Simulation 98
Equivalent-Voltage Approach for Modeling Low-Frequency Dispersive Effects in Microwave FETs 97
Investigation on the Thermal Behavior of Microwave GaN HEMTs 97
null 97
A novel technique for the extraction of nonlinear model for microwave transistors under dynamic-bias operation 97
A 110 GHz scalable FET model based on 50 GHz S-parameter measurements 97
On-Wafer I/V measurement setup for the characterization of low-frequency dispersion in electron devices 97
Accurate prediction of intermodulation distortion in GaAs MESFETs 96
Modeling the effects of traps on the IV-characteristics of GaAs MESFETs 96
Power amplifier ACPR simulation using standard Harmonic balance tools 96
Totale 11.120
Salva come PNG Salva come JPEG
Categoria #
all - tutte 76.345
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 810
Totale 77.155
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/20192.592 0 0 0 0 0 0 0 0 0 604 758 1.230
2019/20205.376 948 198 178 785 352 622 491 569 415 467 242 109
2020/20213.385 275 357 128 408 136 386 146 419 68 531 335 196
2021/20222.553 97 312 185 28 117 106 114 125 97 209 357 806
2022/20232.315 296 9 39 220 388 434 82 229 371 20 152 75
2023/2024999 127 206 94 50 130 203 61 79 19 30 0 0
Totale 22.082