SFERA Archivio dei prodotti della Ricerca dell'Università di Ferrara

VANNINI, Giorgio
 Distribuzione geografica
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Continente #
NA - Nord America 16.772
EU - Europa 3.782
AS - Asia 2.822
SA - Sud America 16
OC - Oceania 12
AF - Africa 5
Continente sconosciuto - Info sul continente non disponibili 5
Totale 23.414
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Nazione #
US - Stati Uniti d'America 16.735
CN - Cina 1.536
UA - Ucraina 1.111
IT - Italia 874
TR - Turchia 664
DE - Germania 559
SG - Singapore 520
GB - Regno Unito 403
SE - Svezia 286
FI - Finlandia 255
PL - Polonia 187
VN - Vietnam 35
CA - Canada 34
FR - Francia 27
ID - Indonesia 25
LT - Lituania 13
BE - Belgio 12
AU - Australia 11
BR - Brasile 11
HK - Hong Kong 10
NL - Olanda 10
KR - Corea 9
RU - Federazione Russa 7
CZ - Repubblica Ceca 6
TW - Taiwan 6
ES - Italia 5
IN - India 5
JP - Giappone 5
RO - Romania 5
AR - Argentina 4
AT - Austria 4
A2 - ???statistics.table.value.countryCode.A2??? 3
BD - Bangladesh 3
BG - Bulgaria 3
MD - Moldavia 3
MX - Messico 3
CH - Svizzera 2
DK - Danimarca 2
DZ - Algeria 2
EU - Europa 2
IE - Irlanda 2
MA - Marocco 2
MY - Malesia 2
PT - Portogallo 2
EC - Ecuador 1
HR - Croazia 1
IQ - Iraq 1
LU - Lussemburgo 1
LY - Libia 1
NZ - Nuova Zelanda 1
PK - Pakistan 1
RS - Serbia 1
SI - Slovenia 1
Totale 23.414
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Città #
Fairfield 2.310
Woodbridge 2.260
Houston 1.536
Ashburn 1.316
Jacksonville 1.288
Ann Arbor 918
Chandler 889
Seattle 853
Wilmington 786
Cambridge 770
Santa Clara 593
Ferrara 491
Nanjing 451
Izmir 424
Singapore 348
Princeton 291
Beijing 245
Boardman 211
Warsaw 187
San Diego 182
Nanchang 117
Shenyang 97
Hebei 84
Dearborn 83
Milan 83
Shanghai 81
Tianjin 77
Los Angeles 72
Jiaxing 67
Addison 66
Changsha 51
Washington 46
Mountain View 45
Norwalk 42
Jinan 40
Bologna 38
Kunming 36
Dong Ket 33
London 33
Redwood City 32
Ningbo 28
Zhengzhou 28
San Mateo 27
Des Moines 26
Jakarta 24
Auburn Hills 23
Düsseldorf 23
Falls Church 22
Toronto 22
Indiana 18
Orange 17
Verona 17
Lanzhou 16
Settimo Milanese 16
Ferrara di Monte Baldo 14
Haikou 14
Helsinki 14
Tappahannock 14
Hangzhou 13
Philadelphia 13
Brussels 12
Guangzhou 12
Changchun 11
Rome 10
Frankfurt am Main 9
Hong Kong 9
Munich 8
Ottawa 8
Redmond 8
Taizhou 8
Council Bluffs 7
New York 7
Amsterdam 6
Chicago 6
Parma 6
Berlin 5
Chengdu 5
Kilburn 5
Prescot 5
San Francisco 5
Taipei 5
Bremen 4
Fuzhou 4
Hounslow 4
Lappeenranta 4
Massapequa 4
Olomouc 4
Taiyuan 4
Tempe 4
Torino 4
Vicenza 4
Andover 3
Castel Maggiore 3
Chisinau 3
Hefei 3
Melbourne 3
New Bedfont 3
New Orleans 3
Shenzhen 3
Vienna 3
Totale 18.185
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Nome #
Dynamic-Bias S-Parameters: A New Measurement Technique for Microwave Transistors 289
A New Dynamic-Bias Measurement Setup for Nonlinear Transistor Model Identification 184
GaN HEMT Noise Model Based on Electromagnetic Simulations 176
10 Watt High Efficiency GaAs MMIC Power Amplifier for Space Applications 172
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 171
Neural approach for temperature-dependent modeling of GaN HEMTs 165
A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique 148
Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design 139
A procedure for the extraction of a nonlinear microwave GaN FET model 135
A Harmonic-Balance-oriented modeling approach for microwave electron devices 134
Microwave transistor modeling 133
Extremely Low-Frequency Measurements Using an Active Bias Tee 132
NONLINEAR EMBEDDING AND DE-EMBEDDING TECHNIQUES FOR LARGE-SIGNAL FET MEASUREMENTS 130
Millimeter-Wave FET Nonlinear Modelling Based on the Dynamic-Bias Measurement Technique 129
GaN HEMT noise modeling based on 50-Ω noise factor 129
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance 128
Nonquasi-Static Large-Signal Model of GaN FETs through an Equivalent Voltage Approach 127
Experimental Investigation of LF dispersion and IMD asymmetry within GaN based HEMT technology 127
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems 127
Modelling insight into the resonance frequencies of the microwave impedance parameters for GaAs HEMTs 126
Behavioral Modeling of GaN FETs: a Load-Line Approach 125
Solid-state RF power amplifiers for ISM CW applications based on 100 V GaN technology 124
X-Band GaN Power Amplifier for Future Generation SAR Systems 122
Temperature Influence on GaN HEMT Equivalent Circuit 122
Technology-Independent Analysis of the Double Current-Gain Peak in Millimeter-Wave FETs 122
A New Technique for Thermal Resistance Measurement in Power Electron Devices 120
GaN HEMT model extraction based on dynamic-bias measurements 120
Breakdown Walkout Investigation in Electron Devices Under Nonlinear Dynamic Regime 119
Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design 119
A New Empirical Model for the Characterization of Low-Frequency Dispersive Effects in FET Electron Devices Accounting for Thermal Influence on the Trapping State 119
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design 119
A new approach to Class-E power amplifier design 117
GaN HEMT large-signal model accounting for both low-frequency dispersion and high-frequency non-quasi-static effects 117
A Nonquasi-Static Empirical Model of Electron Devices 115
Linear versus nonlinear de-embedding: Experimental investigation 115
High-Efficiency Broadband Power Amplifier Design Technique Based on a Measured-Load-Line Approach 115
A computationally efficient approach for the design of RF power amplifiers 115
Optimization of the solenoid valve behavior in common-rail injection systems 115
In-Deep Insight into the Extrinsic Capacitance Impact on GaN HEMT Modeling at Millimeter-Wave Band 115
Waveform engineering: State-of-the-art and future trends (invited paper) 115
Accurate GaN HEMT nonquasi-static large-signal model including dispersive effects 114
A dual-source nonlinear measurement system oriented to the empirical characterization of low-frequency dispersion in microwave electron devices 114
EM-based Modeling of Cascode FETs Suitable for MMIC Design 113
A CLEAR-CUT UNDERSTANDING OF THE CURRENT-GAIN PEAK IN HEMTs: THEORY AND EXPERIMENTS 113
Mathematical approaches to electron device modelling for non-linear microwave circuit design: state of the art and present trends 112
A New Millimeter Wave Small-Signal Modeling Approach for pHEMTs Accounting for the Output Conductance Time Delay 112
Characterization of GaN HEMT Low-Frequency Dispersion Through a Multi-Harmonic Measurement System 112
A GaN power amplifier for 100 VDC bus in GPS L-band 112
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design 111
Kink Effect in S22 for GaN and GaAs HEMTs 111
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data 111
Identification of the optimum operation for GaN HEMTs in high-power amplifiers 110
null 110
Accurate Nonlinear Electron Device Modelling for Cold FET Mixer Design 110
A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology 110
Design of Low Phase Noise Dielectric Resonator Oscillators with GaInP HBT devices exploiting a Non-Linear Noise Model 109
Modeling of non ideal dynamic characteristics in S/H-ADC devices 109
GaN Ku-band low-noise amplifier design including RF life test 109
Evaluation of high-voltage transistor reliability under nonlinear dynamic operation 109
Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements 109
A New Approach to Microwave Power Amplifier Design Based on the Experimental Characterization of the Intrinsic Electron-Device Load-line 109
Scalable nonlinear FET model based on a distributed parasitic network description 108
Accurate prediction of PHEMT intermodulation distortion using the nonlinear discrete convolution model 108
A Small-Signal Parameter-Based Metric for Nonlinear Models of Electron Devices 108
null 108
Empirical modeling of low-frequency dispersive effects due to traps and thermal phenomena in III-V FETs 107
Evaluation of FET performance and restrictions by low-frequency measurements 107
Empirical Investigation on Time Dispersion of Microwave Electron Device Characteristics under Nonlinear Dynamic Operating Conditions 107
Electron Device Model Parameter Identification Through Large-Signal-Predictive Small-Signal-Based Error Functions 106
An Automated Measurement System for the Characterization of Electron Device Degradation under Nonlinear Dynamic Regime 106
“Hybrid” Approach to Microwave Power Amplifier Design 106
Microwave FET model identification based on vector intermodulation measurements 106
Nonlinear modeling of InP devices for W-band applications 106
A finite-memory nonlinear model for microwave electron devices 106
Accurate EM-Based Modeling of Cascode FETs 106
Small-Signal Operation-Based Simplified Verification of Non-Linear Models for Millimeter-Wave Electron Devices 105
A distributed approach for millimetre-wave electron device modelling 105
Nonlinear integral modeling of Dual-Gate GaAs MESFETs 105
Millimeter-wave FET modeling using on-wafer measurements and EM simulation 104
Large-signal modelling of Dual-Gate GaAs MESFETs 104
Characterization of charge-trapping effects in GaN FETs through low-frequency measurements 104
Nonlinear model for 40-GHz cold-FET operation 104
75-VDC GaN technology investigation from a degradation perspective 104
An ultra-wideband sensing board for IoT 104
A 110 GHz scalable FET model based on 50 GHz S-parameter measurements 104
A nonlinear integral model of electron devices for HB circuit analysis 103
Temperature dependent vector large-signal measurements 103
Modelling of deviations between static and dynamic drain characteristics in GaAs FETs 103
GaN power amplifier design exploiting wideband large-signal matching 103
Small- Versus Large-Signal Extraction of Charge Models of Microwave FETs 103
Accurate prediction of intermodulation distortion in GaAs MESFETs 102
Power amplifier ACPR simulation using standard Harmonic balance tools 102
On the evaluation of the high-frequency load line in active devices 102
Comparison of Electron Device Models Based on Operation-specific Metrics 102
Investigation on the Thermal Behavior of Microwave GaN HEMTs 102
null 102
Nonlinear Deembedding of Microwave Large-Signal Measurements 102
Modeling the effects of traps on the IV-characteristics of GaAs MESFETs 101
Optimization of the Solenoid Valve Behavior in Common-Rail Injection Systems 101
Equivalent-Voltage Approach for Modeling Low-Frequency Dispersive Effects in Microwave FETs 101
Totale 11.770
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Categoria #
all - tutte 106.304
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 1.123
Totale 107.427
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20203.267 0 0 0 0 352 622 491 569 415 467 242 109
2020/20213.385 275 357 128 408 136 386 146 419 68 531 335 196
2021/20222.553 97 312 185 28 117 106 114 125 97 209 357 806
2022/20232.315 296 9 39 220 388 434 82 229 371 20 152 75
2023/20241.344 127 206 94 50 130 203 61 79 19 30 41 304
2024/20251.312 103 98 401 44 666 0 0 0 0 0 0 0
Totale 23.739