SFERA Archivio dei prodotti della Ricerca dell'Università di Ferrara

VANNINI, Giorgio
 Distribuzione geografica
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Continente #
NA - Nord America 20.820
AS - Asia 10.752
EU - Europa 5.034
SA - Sud America 2.040
AF - Africa 231
OC - Oceania 15
Continente sconosciuto - Info sul continente non disponibili 5
Totale 38.897
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Nazione #
US - Stati Uniti d'America 20.460
SG - Singapore 4.029
CN - Cina 2.662
BR - Brasile 1.622
UA - Ucraina 1.167
HK - Hong Kong 1.082
VN - Vietnam 1.082
IT - Italia 993
TR - Turchia 734
DE - Germania 667
GB - Regno Unito 528
SE - Svezia 324
FR - Francia 310
JP - Giappone 307
FI - Finlandia 288
RU - Federazione Russa 272
PL - Polonia 244
MX - Messico 191
IN - India 186
AR - Argentina 142
BD - Bangladesh 130
CA - Canada 116
ID - Indonesia 95
IQ - Iraq 82
ZA - Sudafrica 73
EC - Ecuador 72
VE - Venezuela 61
CO - Colombia 55
PK - Pakistan 53
UZ - Uzbekistan 44
NL - Olanda 42
ES - Italia 36
MA - Marocco 36
TN - Tunisia 31
SA - Arabia Saudita 28
CL - Cile 27
LT - Lituania 27
PH - Filippine 27
MY - Malesia 25
AE - Emirati Arabi Uniti 24
AT - Austria 23
JO - Giordania 23
KE - Kenya 22
IE - Irlanda 19
OM - Oman 19
TW - Taiwan 19
EG - Egitto 18
NP - Nepal 17
AZ - Azerbaigian 16
BE - Belgio 16
CZ - Repubblica Ceca 16
UY - Uruguay 16
DZ - Algeria 15
PY - Paraguay 15
AU - Australia 14
BO - Bolivia 14
PE - Perù 14
KR - Corea 12
JM - Giamaica 11
KZ - Kazakistan 11
CH - Svizzera 10
CR - Costa Rica 9
ET - Etiopia 8
IL - Israele 7
LY - Libia 7
AL - Albania 6
DO - Repubblica Dominicana 6
HN - Honduras 6
LB - Libano 6
RO - Romania 6
SI - Slovenia 6
BG - Bulgaria 5
RS - Serbia 5
DK - Danimarca 4
GT - Guatemala 4
KG - Kirghizistan 4
MD - Moldavia 4
PS - Palestinian Territory 4
PT - Portogallo 4
SN - Senegal 4
A2 - ???statistics.table.value.countryCode.A2??? 3
BB - Barbados 3
CI - Costa d'Avorio 3
CY - Cipro 3
GE - Georgia 3
HR - Croazia 3
LV - Lettonia 3
PA - Panama 3
TT - Trinidad e Tobago 3
AO - Angola 2
BH - Bahrain 2
EU - Europa 2
KH - Cambogia 2
LR - Liberia 2
MM - Myanmar 2
MN - Mongolia 2
MU - Mauritius 2
NG - Nigeria 2
NI - Nicaragua 2
QA - Qatar 2
Totale 38.868
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Città #
Singapore 2.408
Fairfield 2.310
Woodbridge 2.260
Ashburn 2.117
Houston 1.547
Jacksonville 1.291
Hong Kong 1.066
Ann Arbor 918
San Jose 899
Chandler 889
Seattle 866
Wilmington 792
Cambridge 770
Beijing 669
Santa Clara 650
Ferrara 506
Nanjing 454
Dallas 432
Izmir 425
Ho Chi Minh City 336
Tokyo 299
Princeton 291
Hanoi 263
Warsaw 238
Lauterbourg 237
Boardman 211
Los Angeles 207
San Diego 183
Mexico City 142
São Paulo 134
Nanchang 118
Shenyang 98
Milan 97
Tianjin 92
Shanghai 89
Hebei 84
Dearborn 83
Hefei 83
Moscow 78
Chicago 77
The Dalles 75
New York 70
Jiaxing 67
Addison 66
Washington 59
Changsha 55
Da Nang 55
London 55
Council Bluffs 54
Haiphong 51
Bologna 45
Mountain View 45
Rio de Janeiro 45
Orem 43
Norwalk 42
San Francisco 42
Jinan 41
Toronto 40
Stockholm 39
Kunming 37
Brooklyn 36
Tashkent 36
Chennai 35
Helsinki 35
Columbus 34
Montreal 34
Dong Ket 33
Belo Horizonte 32
Johannesburg 32
Redwood City 32
Zhengzhou 32
Manchester 31
Baghdad 30
Jakarta 30
Curitiba 29
Quito 29
Ningbo 28
Atlanta 27
Brasília 27
Denver 27
Des Moines 27
Falkenstein 27
Guangzhou 27
San Mateo 27
Frankfurt am Main 26
Salt Lake City 25
Amsterdam 24
Ankara 24
Auburn Hills 23
Düsseldorf 23
Amman 22
Caracas 22
Falls Church 22
Campinas 21
Guayaquil 21
Porto Alegre 21
Boston 20
Hải Dương 20
Istanbul 20
Manaus 20
Totale 26.826
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Nome #
Dynamic-Bias S-Parameters: A New Measurement Technique for Microwave Transistors 363
A New Dynamic-Bias Measurement Setup for Nonlinear Transistor Model Identification 296
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 270
GaN HEMT Noise Model Based on Electromagnetic Simulations 269
10 Watt High Efficiency GaAs MMIC Power Amplifier for Space Applications 265
A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique 229
Neural approach for temperature-dependent modeling of GaN HEMTs 216
A procedure for the extraction of a nonlinear microwave GaN FET model 213
A new approach to Class-E power amplifier design 211
Accurate GaN HEMT nonquasi-static large-signal model including dispersive effects 206
A New Empirical Model for the Characterization of Low-Frequency Dispersive Effects in FET Electron Devices Accounting for Thermal Influence on the Trapping State 204
GaN HEMT noise modeling based on 50-Ω noise factor 203
A GaN power amplifier for 100 VDC bus in GPS L-band 203
Empirical modeling of low-frequency dispersive effects due to traps and thermal phenomena in III-V FETs 202
A computationally efficient approach for the design of RF power amplifiers 202
Microwave transistor modeling 202
A 110 GHz scalable FET model based on 50 GHz S-parameter measurements 202
75-VDC GaN technology investigation from a degradation perspective 201
Extremely low-frequency measurements using an active bias tee 200
A CLEAR-CUT UNDERSTANDING OF THE CURRENT-GAIN PEAK IN HEMTs: THEORY AND EXPERIMENTS 199
A dual-source nonlinear measurement system oriented to the empirical characterization of low-frequency dispersion in microwave electron devices 199
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance 198
Solid-state RF power amplifiers for ISM CW applications based on 100 V GaN technology 198
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems 197
A finite-memory nonlinear model for microwave electron devices 197
A distributed approach for millimetre-wave electron device modelling 196
Experimental Investigation of LF dispersion and IMD asymmetry within GaN based HEMT technology 194
Identification of the optimum operation for GaN HEMTs in high-power amplifiers 193
X-Band GaN Power Amplifier for Future Generation SAR Systems 190
A Nonquasi-Static Empirical Model of Electron Devices 189
Linear versus nonlinear de-embedding: Experimental investigation 189
Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design 187
Behavioral Modeling of GaN FETs: a Load-Line Approach 187
High-Efficiency Broadband Power Amplifier Design Technique Based on a Measured-Load-Line Approach 187
Waveform engineering: State-of-the-art and future trends (invited paper) 187
GaN HEMT large-signal model accounting for both low-frequency dispersion and high-frequency non-quasi-static effects 187
Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design 186
Nonlinear embedding and de-embedding techniques for large-signal fet measurements 186
A Harmonic-Balance-oriented modeling approach for microwave electron devices 185
Breakdown Walkout Investigation in Electron Devices Under Nonlinear Dynamic Regime 184
On the evaluation of the high-frequency load line in active devices 183
"Hybrid" Approach to microwave power amplifier design 182
Evaluation of FET performance and restrictions by low-frequency measurements 181
A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology 181
A New Approach to Microwave Power Amplifier Design Based on the Experimental Characterization of the Intrinsic Electron-Device Load-line 180
Technology-Independent Analysis of the Double Current-Gain Peak in Millimeter-Wave FETs 179
Millimeter-Wave FET Nonlinear Modelling Based on the Dynamic-Bias Measurement Technique 178
A CAD tool for the small-signal stability analysis of MMIC power amplifiers 178
GaN Ku-band low-noise amplifier design including RF life test 178
Extraction of an Extrinsic Parasitic Network for Accurate mm-Wave FET Scalable Modeling on the Basis of Full-Wave EM Simulation 177
Modelling insight into the resonance frequencies of the microwave impedance parameters for GaAs HEMTs 176
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design 176
Evaluation of high-voltage transistor reliability under nonlinear dynamic operation 176
Kink Effect in S22 for GaN and GaAs HEMTs 175
Characterization of GaN HEMT Low-Frequency Dispersion Through a Multi-Harmonic Measurement System 174
Microwave large-signal amplifier design using a quasi-black-box transistor model 174
An ultra-wideband sensing board for IoT 174
GaN HEMT model extraction based on dynamic-bias measurements 174
Comparison of Electron Device Models Based on Operation-specific Metrics 173
Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers 172
Nonquasi-Static Large-Signal Model of GaN FETs through an Equivalent Voltage Approach 171
Thermal characterization of high-power GaN HEMTs up to 65 GHz 171
In-Deep Insight into the Extrinsic Capacitance Impact on GaN HEMT Modeling at Millimeter-Wave Band 170
Mathematical approaches to electron device modelling for non-linear microwave circuit design: state of the art and present trends 169
An Automated Measurement System for the Characterization of Electron Device Degradation under Nonlinear Dynamic Regime 169
Characterization of charge-trapping effects in GaN FETs through low-frequency measurements 169
Waveforms-Based Large-Signal Identification of Transistor Models 167
Temperature Influence on GaN HEMT Equivalent Circuit 167
Design of Low Phase Noise Dielectric Resonator Oscillators with GaInP HBT devices exploiting a Non-Linear Noise Model 166
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design 166
Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements 166
A Preliminary Study of Different Metrics for the Validation of Device and Behavioral Models 165
A design method for parallel feed-back dielectric resonator oscillators 165
Analysis of the gate current as a suitable indicator for FET degradation under nonlinear dynamic regime 165
A New Millimeter Wave Small-Signal Modeling Approach for pHEMTs Accounting for the Output Conductance Time Delay 164
Scalable nonlinear FET model based on a distributed parasitic network description 164
A 48Watt and 60dB Gain Hybrid Power Line-Up Using a 0.35um GaAs pHEMT Process for an L-Band T/R Module of a space SAR Antenna 164
A Small-Signal Parameter-Based Metric for Nonlinear Models of Electron Devices 164
Power amplifier ACPR simulation using standard Harmonic balance tools 163
Optimization of the solenoid valve behavior in common-rail injection systems 163
Empirical Investigation on Time Dispersion of Microwave Electron Device Characteristics under Nonlinear Dynamic Operating Conditions 163
Accurate Nonlinear Electron Device Modelling for Cold FET Mixer Design 163
Nonlinear Deembedding of Microwave Large-Signal Measurements 163
Modeling the effects of traps on the IV-characteristics of GaAs MESFETs 162
Accurate Modeling of Electron Device I/V Characteristics Through a Simplified Large-Signal Measurement Setup 162
Nonlinear modeling of InP devices for W-band applications 162
A New Technique for Thermal Resistance Measurement in Power Electron Devices 161
Temperature dependent vector large-signal measurements 161
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data 161
Microwave FET model identification based on vector intermodulation measurements 160
EM-based Modeling of Cascode FETs Suitable for MMIC Design 158
Nonlinear model for 40-GHz cold-FET operation 158
GaN power amplifier design exploiting wideband large-signal matching 157
Modeling of non ideal dynamic characteristics in S/H-ADC devices 156
Accurate prediction of PHEMT intermodulation distortion using the nonlinear discrete convolution model 155
Electron Device Model Parameter Identification Through Large-Signal-Predictive Small-Signal-Based Error Functions 154
Accurate PHEMT Nonlinear Modeling in the Presence of Low-Frequency Dispersive Effects 154
Accurate prediction of intermodulation distortion in GaAs MESFETs 153
Scalable Equivalent Circuit FET Model for MMIC Design Identified Through FW-EM-Analyses 153
A novel technique for the extraction of nonlinear model for microwave transistors under dynamic-bias operation 153
Totale 18.410
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Categoria #
all - tutte 173.885
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 1.897
Totale 175.782
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.062 0 0 0 0 0 0 0 0 0 531 335 196
2021/20222.553 97 312 185 28 117 106 114 125 97 209 357 806
2022/20232.315 296 9 39 220 388 434 82 229 371 20 152 75
2023/20241.344 127 206 94 50 130 203 61 79 19 30 41 304
2024/20254.348 103 98 401 44 681 64 152 449 635 674 715 332
2025/202612.476 1.004 814 1.483 1.777 1.821 770 1.294 640 1.375 1.498 0 0
Totale 39.251