A teclinology-independent, mathematical approach is proposed for the look-up-table based nonlinear modeling of electron devices. The model allows for accurate large-signal performance prediction at high operating frequencies, even in the presence of important parasitic and low-frequency dispersive effects. All the nonlinear functions which characterise this black-box model are directly related to conventional measurements which can be carried out with automatic instrumentation. Preliminary experimental results are presented which confirm the validity of the approach. © 1997 IEEE.

A finite-memory nonlinear model for microwave electron devices

VANNINI, Giorgio;
1997

Abstract

A teclinology-independent, mathematical approach is proposed for the look-up-table based nonlinear modeling of electron devices. The model allows for accurate large-signal performance prediction at high operating frequencies, even in the presence of important parasitic and low-frequency dispersive effects. All the nonlinear functions which characterise this black-box model are directly related to conventional measurements which can be carried out with automatic instrumentation. Preliminary experimental results are presented which confirm the validity of the approach. © 1997 IEEE.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in SFERA sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/1196435
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 5
  • ???jsp.display-item.citation.isi??? 1
social impact