SFERA Archivio dei prodotti della Ricerca dell'Università di Ferrara

VADALA', Valeria
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 7.094
AS - Asia 3.092
EU - Europa 1.807
SA - Sud America 651
Continente sconosciuto - Info sul continente non disponibili 160
AF - Africa 69
OC - Oceania 2
Totale 12.875
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 6.941
SG - Singapore 1.128
CN - Cina 759
IT - Italia 561
BR - Brasile 511
HK - Hong Kong 307
PL - Polonia 298
VN - Vietnam 290
UA - Ucraina 231
TR - Turchia 211
GB - Regno Unito 163
DE - Germania 149
SE - Svezia 110
JP - Giappone 89
FR - Francia 84
IN - India 73
RU - Federazione Russa 70
FI - Finlandia 62
BD - Bangladesh 61
CA - Canada 61
MX - Messico 58
AR - Argentina 46
ID - Indonesia 30
IQ - Iraq 30
EC - Ecuador 26
ZA - Sudafrica 24
VE - Venezuela 21
CO - Colombia 18
ES - Italia 17
PK - Pakistan 15
UZ - Uzbekistan 15
MA - Marocco 13
NL - Olanda 12
SA - Arabia Saudita 11
TN - Tunisia 11
LT - Lituania 10
AE - Emirati Arabi Uniti 9
AZ - Azerbaigian 9
MY - Malesia 9
CL - Cile 8
JO - Giordania 8
UY - Uruguay 8
AT - Austria 7
CR - Costa Rica 7
EG - Egitto 7
JM - Giamaica 7
PH - Filippine 7
BE - Belgio 6
OM - Oman 6
DZ - Algeria 5
GT - Guatemala 5
PE - Perù 5
PY - Paraguay 5
CZ - Repubblica Ceca 4
HN - Honduras 4
IE - Irlanda 4
KE - Kenya 4
NP - Nepal 4
SV - El Salvador 4
BG - Bulgaria 3
KZ - Kazakistan 3
PT - Portogallo 3
TW - Taiwan 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AU - Australia 2
BA - Bosnia-Erzegovina 2
BO - Bolivia 2
CH - Svizzera 2
DK - Danimarca 2
IL - Israele 2
KR - Corea 2
MD - Moldavia 2
RS - Serbia 2
SI - Slovenia 2
TT - Trinidad e Tobago 2
BB - Barbados 1
BH - Bahrain 1
BN - Brunei Darussalam 1
BS - Bahamas 1
CI - Costa d'Avorio 1
CY - Cipro 1
ET - Etiopia 1
GR - Grecia 1
KG - Kirghizistan 1
LB - Libano 1
LY - Libia 1
MM - Myanmar 1
MN - Mongolia 1
MZ - Mozambico 1
NG - Nigeria 1
NI - Nicaragua 1
PA - Panama 1
PR - Porto Rico 1
PS - Palestinian Territory 1
QA - Qatar 1
SR - Suriname 1
SY - Repubblica araba siriana 1
TH - Thailandia 1
Totale 12.717
Salva come PNG Salva come JPEG
Città #
Ashburn 802
Fairfield 793
Singapore 649
Woodbridge 574
Houston 467
San Jose 388
Ferrara 327
Ann Arbor 312
Warsaw 299
Hong Kong 296
Jacksonville 280
Seattle 276
Cambridge 269
Wilmington 257
Beijing 226
Santa Clara 219
Chandler 217
Dallas 178
Council Bluffs 172
Los Angeles 101
Ho Chi Minh City 98
Nanjing 92
Izmir 88
Tokyo 83
Hanoi 80
Princeton 75
Lauterbourg 60
San Diego 57
New York 46
Boardman 43
São Paulo 42
Mexico City 41
Shanghai 41
Dearborn 40
Addison 39
Chicago 39
Nanchang 37
London 34
The Dalles 30
Milan 29
Toronto 29
Washington 25
Shenyang 24
Columbus 22
San Francisco 22
Orem 21
Mountain View 20
Moscow 18
Bologna 17
Brooklyn 16
Changsha 15
Denver 15
Guangzhou 15
Jiaxing 15
Johannesburg 15
Norwalk 15
Redwood City 15
Chennai 14
Da Nang 14
Haiphong 14
Rome 14
Atlanta 13
Baghdad 13
Jakarta 13
Phoenix 13
Curitiba 12
Hebei 12
Manchester 12
Stockholm 12
Tianjin 12
Belo Horizonte 11
Brasília 11
Buffalo 11
Guayaquil 11
Kunming 11
Montreal 11
Rio de Janeiro 11
Boston 10
Charlotte 10
Des Moines 10
Frankfurt am Main 10
Tashkent 10
Auburn Hills 9
Quito 9
Zhengzhou 9
Amman 8
Dehradun 8
Jinan 8
Poplar 8
Settimo Milanese 8
Baku 7
Falls Church 7
Helsinki 7
Istanbul 7
Mumbai 7
Paris 7
Salvador 7
Uberlândia 7
Amsterdam 6
Brussels 6
Totale 8.945
Salva come PNG Salva come JPEG
Nome #
Dynamic-Bias S-Parameters: A New Measurement Technique for Microwave Transistors 378
A New Dynamic-Bias Measurement Setup for Nonlinear Transistor Model Identification 308
CHARACTERIZATION AND MODELING OF LOW FREQUENCY DISPERSIVE EFFECTS IN III-V ELECTRON DEVICES 293
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 288
A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique 240
A new approach to Class-E power amplifier design 228
A procedure for the extraction of a nonlinear microwave GaN FET model 227
A dual-source nonlinear measurement system oriented to the empirical characterization of low-frequency dispersion in microwave electron devices 216
Accurate GaN HEMT nonquasi-static large-signal model including dispersive effects 215
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems 213
75-VDC GaN technology investigation from a degradation perspective 212
A New Empirical Model for the Characterization of Low-Frequency Dispersive Effects in FET Electron Devices Accounting for Thermal Influence on the Trapping State 210
Extremely low-frequency measurements using an active bias tee 207
Experimental Investigation of LF dispersion and IMD asymmetry within GaN based HEMT technology 205
X-Band GaN Power Amplifier for Future Generation SAR Systems 205
Behavioral Modeling of GaN FETs: a Load-Line Approach 200
Identification of the optimum operation for GaN HEMTs in high-power amplifiers 199
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance 199
Linear versus nonlinear de-embedding: Experimental investigation 197
Nonlinear embedding and de-embedding techniques for large-signal fet measurements 196
Waveform engineering: State-of-the-art and future trends (invited paper) 196
Evaluation of FET performance and restrictions by low-frequency measurements 195
Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design 194
GaN HEMT large-signal model accounting for both low-frequency dispersion and high-frequency non-quasi-static effects 194
On the evaluation of the high-frequency load line in active devices 192
Technology-Independent Analysis of the Double Current-Gain Peak in Millimeter-Wave FETs 191
"Hybrid" Approach to microwave power amplifier design 190
Thermal characterization of high-power GaN HEMTs up to 65 GHz 190
A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology 187
Millimeter-Wave FET Nonlinear Modelling Based on the Dynamic-Bias Measurement Technique 185
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design 183
Evaluation of high-voltage transistor reliability under nonlinear dynamic operation 183
Microwave FET model identification based on vector intermodulation measurements 181
Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers 181
GaN HEMT model extraction based on dynamic-bias measurements 180
Characterization of GaN HEMT Low-Frequency Dispersion Through a Multi-Harmonic Measurement System 178
Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements 178
Characterization of charge-trapping effects in GaN FETs through low-frequency measurements 176
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data 173
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design 171
GaN power amplifier design exploiting wideband large-signal matching 165
Nonlinear model for 40-GHz cold-FET operation 165
A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements 163
GaN HEMT Nonlinear Characterization for Wideband High-Power Amplifier Design 160
An Innovative Two-Source Large-Signal Measurement System for the Characterization of Low-Frequency Dispersive Effects in FETs 154
Low-Frequency Waveform Engineering Technique for Class-F Microwave Power Amplifier Design 153
Extended operation of class-F power amplifiers using input waveform engineering 152
Load-Pull Measurements Oriented to Harmonically-Tuned Power Amplifier Design 145
Power Amplifier Design Accounting for Input Large-Signal Matching 143
Nonlinear modeling of LDMOS transistors for high-power FM transmitters 137
A New Modeling Technique for Microwave Multicell Transistors Based on EM Simulations 135
Class-A Power Amplifier Design Technique Based on Electron Device Low-Frequency Characterization 135
Characterization of Electron Device Breakdown Under Nonlinear Dynamic Operation 134
Influence of the Gate Current Dynamic Behaviour on GaAs HEMT Reliability Issues 132
Current-gain in FETs beyond cut-off frequency 130
GaN FET Load-Pull Data in Circuit Simulators: a Comparative Study 127
GaN HEMT Model with Enhanced Accuracy under Back-off Operation 127
A new description of fast charge-trapping effects in GaN FETs 124
A Load–Pull Characterization Technique Accounting for Harmonic Tuning 117
An Improved Transistor Modeling Methodology Exploiting the Quasi-Static Approximation 117
Advanced Measurement Techniques for Nonlinear Modelling of GaN HEMTs: From L-band to mm-Wave Applications 113
null 110
Nonlinear Embedding and De-embedding: Theory and Applications 105
null 102
null 100
High-periphery GaN HEMT modeling up to 65 GHz and 200 °C 99
null 97
Empowering GaN HEMT models: The gateway for power amplifier design 91
C-Band Power Amplifier Design Based on Low-Frequency Waveform Engineering 90
Temperature Dependent Small-Signal Neural Modeling of High-Periphery GaN HEMTs 90
null 86
null 86
A Low-Cost and Accurate Technique for the Prediction of Load-Pull Contours 85
Scalability of Multifinger HEMT Performance 82
Evaluation of Microwave Transistor Degradation Using Low-Frequency Time-Domain Measurements 80
Nonlinear Characterization of GaN Transistors under Dynamic Bias Operation 68
Extraction of accurate GaN HEMT model for high-efficiency power amplifier design 65
null 63
Nonlinear Modelling of GaN Transistors: Behavioural and Analytical Approaches 61
null 53
Totale 12.875
Salva come PNG Salva come JPEG
Categoria #
all - tutte 59.806
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 638
Totale 60.444
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022692 0 0 54 13 41 53 45 53 38 72 104 219
2022/2023595 80 5 18 40 93 111 33 71 96 7 28 13
2023/2024444 32 70 36 21 45 85 17 17 11 8 14 88
2024/20251.442 32 44 129 12 221 16 59 143 223 193 253 117
2025/20263.997 325 242 473 467 644 232 392 179 403 459 122 59
2026/2027519 107 268 144 0 0 0 0 0 0 0 0 0
Totale 12.875