SFERA Archivio dei prodotti della Ricerca dell'Università di Ferrara

VADALA', Valeria
 Distribuzione geografica
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Continente #
NA - Nord America 4.806
EU - Europa 1.327
AS - Asia 691
SA - Sud America 3
AF - Africa 2
Continente sconosciuto - Info sul continente non disponibili 2
OC - Oceania 2
Totale 6.833
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Nazione #
US - Stati Uniti d'America 4.798
IT - Italia 466
CN - Cina 396
PL - Polonia 272
UA - Ucraina 214
TR - Turchia 193
DE - Germania 116
SE - Svezia 97
GB - Regno Unito 89
SG - Singapore 85
FI - Finlandia 50
CA - Canada 6
FR - Francia 4
HK - Hong Kong 4
VN - Vietnam 4
BE - Belgio 3
BG - Bulgaria 3
ID - Indonesia 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AT - Austria 2
AU - Australia 2
BD - Bangladesh 2
BR - Brasile 2
CZ - Repubblica Ceca 2
JP - Giappone 2
MA - Marocco 2
MD - Moldavia 2
MX - Messico 2
PT - Portogallo 2
AR - Argentina 1
CH - Svizzera 1
ES - Italia 1
IE - Irlanda 1
IN - India 1
MY - Malesia 1
NL - Olanda 1
SI - Slovenia 1
Totale 6.833
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Città #
Fairfield 793
Woodbridge 574
Houston 464
Ashburn 462
Ferrara 316
Ann Arbor 312
Jacksonville 279
Seattle 272
Warsaw 272
Cambridge 269
Wilmington 256
Chandler 217
Nanjing 91
Izmir 88
Beijing 86
Princeton 75
San Diego 51
Singapore 47
Boardman 43
Dearborn 40
Addison 39
Shanghai 38
Nanchang 36
Los Angeles 33
Shenyang 24
Washington 22
Mountain View 20
Milan 18
Jiaxing 15
Redwood City 15
Norwalk 14
Hebei 12
Bologna 11
Changsha 11
Kunming 11
Tianjin 11
Auburn Hills 9
Des Moines 9
London 9
Santa Clara 9
Jinan 8
Settimo Milanese 8
Falls Church 7
Zhengzhou 7
Ferrara di Monte Baldo 6
Guangzhou 6
Indiana 5
Toronto 5
Cagliari 4
Lanzhou 4
Massapequa 4
Ningbo 4
Orange 4
Rome 4
Verona 4
Andover 3
Berlin 3
Brussels 3
Cottbus 3
Dong Ket 3
Haikou 3
Hangzhou 3
Hong Kong 3
Jakarta 3
Torino 3
Changchun 2
Chengdu 2
Chicago 2
Chisinau 2
Clifton 2
Fuzhou 2
Garbagnate Milanese 2
Gavirate 2
Helsinki 2
Lucca 2
New York 2
Parma 2
Saint Paul 2
San Mateo 2
Taiyuan 2
Taizhou 2
Tappahannock 2
Vancouver 2
Vicenza 2
Vienna 2
Aachen 1
Acton 1
Amsterdam 1
Aveiro 1
Baotou 1
Bath 1
Bremen 1
Brentford 1
Buenos Aires 1
Cinisello Balsamo 1
Cittadella 1
Clearwater 1
Dalian 1
Dolo 1
Dublin 1
Totale 5.538
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Nome #
Dynamic-Bias S-Parameters: A New Measurement Technique for Microwave Transistors 267
A New Dynamic-Bias Measurement Setup for Nonlinear Transistor Model Identification 179
CHARACTERIZATION AND MODELING OF LOW FREQUENCY DISPERSIVE EFFECTS IN III-V ELECTRON DEVICES 177
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 165
A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique 143
A procedure for the extraction of a nonlinear microwave GaN FET model 130
Extremely Low-Frequency Measurements Using an Active Bias Tee 128
NONLINEAR EMBEDDING AND DE-EMBEDDING TECHNIQUES FOR LARGE-SIGNAL FET MEASUREMENTS 127
Millimeter-Wave FET Nonlinear Modelling Based on the Dynamic-Bias Measurement Technique 125
Experimental Investigation of LF dispersion and IMD asymmetry within GaN based HEMT technology 123
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance 122
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems 121
Behavioral Modeling of GaN FETs: a Load-Line Approach 120
X-Band GaN Power Amplifier for Future Generation SAR Systems 119
Technology-Independent Analysis of the Double Current-Gain Peak in Millimeter-Wave FETs 118
GaN HEMT model extraction based on dynamic-bias measurements 117
Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design 115
A New Empirical Model for the Characterization of Low-Frequency Dispersive Effects in FET Electron Devices Accounting for Thermal Influence on the Trapping State 113
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design 113
GaN HEMT large-signal model accounting for both low-frequency dispersion and high-frequency non-quasi-static effects 112
A new approach to Class-E power amplifier design 110
null 110
Linear versus nonlinear de-embedding: Experimental investigation 109
A dual-source nonlinear measurement system oriented to the empirical characterization of low-frequency dispersion in microwave electron devices 109
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data 108
Accurate GaN HEMT nonquasi-static large-signal model including dispersive effects 107
Characterization of GaN HEMT Low-Frequency Dispersion Through a Multi-Harmonic Measurement System 107
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design 107
Identification of the optimum operation for GaN HEMTs in high-power amplifiers 105
A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology 105
Waveform engineering: State-of-the-art and future trends (invited paper) 104
Evaluation of high-voltage transistor reliability under nonlinear dynamic operation 104
Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements 104
“Hybrid” Approach to Microwave Power Amplifier Design 102
Microwave FET model identification based on vector intermodulation measurements 102
Evaluation of FET performance and restrictions by low-frequency measurements 102
null 102
Nonlinear model for 40-GHz cold-FET operation 101
null 100
GaN power amplifier design exploiting wideband large-signal matching 100
On the evaluation of the high-frequency load line in active devices 98
Characterization of charge-trapping effects in GaN FETs through low-frequency measurements 98
null 97
75-VDC GaN technology investigation from a degradation perspective 97
Thermal characterization of high-power GaN HEMTs up to 65 GHz 97
Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers 94
Extended operation of class-F power amplifiers using input waveform engineering 87
null 86
null 86
Nonlinear modeling of LDMOS transistors for high-power FM transmitters 85
GaN FET Load-Pull Data in Circuit Simulators: a Comparative Study 69
GaN HEMT Nonlinear Characterization for Wideband High-Power Amplifier Design 68
Current-gain in FETs beyond cut-off frequency 67
Characterization of Electron Device Breakdown Under Nonlinear Dynamic Operation 66
An Innovative Two-Source Large-Signal Measurement System for the Characterization of Low-Frequency Dispersive Effects in FETs 65
Low-Frequency Waveform Engineering Technique for Class-F Microwave Power Amplifier Design 65
null 63
Class-A Power Amplifier Design Technique Based on Electron Device Low-Frequency Characterization 63
Load-Pull Measurements Oriented to Harmonically-Tuned Power Amplifier Design 61
A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements 60
Power Amplifier Design Accounting for Input Large-Signal Matching 58
GaN HEMT Model with Enhanced Accuracy under Back-off Operation 58
null 53
Influence of the Gate Current Dynamic Behaviour on GaAs HEMT Reliability Issues 51
A New Modeling Technique for Microwave Multicell Transistors Based on EM Simulations 45
An Improved Transistor Modeling Methodology Exploiting the Quasi-Static Approximation 37
Temperature Dependent Small-Signal Neural Modeling of High-Periphery GaN HEMTs 32
Scalability of Multifinger HEMT Performance 32
High-periphery GaN HEMT modeling up to 65 GHz and 200 °C 29
Evaluation of Microwave Transistor Degradation Using Low-Frequency Time-Domain Measurements 29
Advanced Measurement Techniques for Nonlinear Modelling of GaN HEMTs: From L-band to mm-Wave Applications 26
Empowering GaN HEMT models: The gateway for power amplifier design 21
A Load–Pull Characterization Technique Accounting for Harmonic Tuning 21
Nonlinear Characterization of GaN Transistors under Dynamic Bias Operation 20
C-Band Power Amplifier Design Based on Low-Frequency Waveform Engineering 19
A new description of fast charge-trapping effects in GaN FETs 18
Extraction of accurate GaN HEMT model for high-efficiency power amplifier design 12
Nonlinear Embedding and De-embedding: Theory and Applications 9
A Low-Cost and Accurate Technique for the Prediction of Load-Pull Contours 9
Nonlinear Modelling of GaN Transistors: Behavioural and Analytical Approaches 6
Totale 6.989
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Categoria #
all - tutte 28.358
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 244
Totale 28.602
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20201.507 0 63 62 242 118 204 194 199 155 122 95 53
2020/20211.186 82 117 52 146 54 121 89 131 36 179 103 76
2021/2022801 42 67 54 13 41 53 45 53 38 72 104 219
2022/2023595 80 5 18 40 93 111 33 71 96 7 28 13
2023/2024444 32 70 36 21 45 85 17 17 11 8 14 88
2024/202572 32 40 0 0 0 0 0 0 0 0 0 0
Totale 6.989