SFERA Archivio dei prodotti della Ricerca dell'Università di Ferrara

VADALA', Valeria
 Distribuzione geografica
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Continente #
NA - Nord America 6.646
AS - Asia 3.043
EU - Europa 1.770
SA - Sud America 627
AF - Africa 69
Continente sconosciuto - Info sul continente non disponibili 2
OC - Oceania 2
Totale 12.159
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Nazione #
US - Stati Uniti d'America 6.530
SG - Singapore 1.113
CN - Cina 743
IT - Italia 535
BR - Brasile 503
HK - Hong Kong 304
PL - Polonia 298
VN - Vietnam 286
UA - Ucraina 231
TR - Turchia 211
GB - Regno Unito 161
DE - Germania 148
SE - Svezia 110
JP - Giappone 89
FR - Francia 82
IN - India 73
RU - Federazione Russa 70
FI - Finlandia 62
BD - Bangladesh 56
MX - Messico 52
CA - Canada 47
AR - Argentina 44
ID - Indonesia 29
IQ - Iraq 29
ZA - Sudafrica 24
EC - Ecuador 23
VE - Venezuela 18
ES - Italia 15
UZ - Uzbekistan 15
PK - Pakistan 14
MA - Marocco 13
NL - Olanda 12
CO - Colombia 11
SA - Arabia Saudita 11
TN - Tunisia 11
LT - Lituania 10
AE - Emirati Arabi Uniti 9
AZ - Azerbaigian 9
CL - Cile 8
JO - Giordania 8
AT - Austria 7
EG - Egitto 7
MY - Malesia 7
PH - Filippine 7
UY - Uruguay 7
BE - Belgio 6
OM - Oman 6
DZ - Algeria 5
PE - Perù 5
PY - Paraguay 5
CZ - Repubblica Ceca 4
IE - Irlanda 4
JM - Giamaica 4
KE - Kenya 4
NP - Nepal 4
BG - Bulgaria 3
CR - Costa Rica 3
KZ - Kazakistan 3
TW - Taiwan 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AU - Australia 2
BO - Bolivia 2
CH - Svizzera 2
DK - Danimarca 2
GT - Guatemala 2
HN - Honduras 2
IL - Israele 2
KR - Corea 2
MD - Moldavia 2
PT - Portogallo 2
SI - Slovenia 2
TT - Trinidad e Tobago 2
BA - Bosnia-Erzegovina 1
BB - Barbados 1
BH - Bahrain 1
BN - Brunei Darussalam 1
CI - Costa d'Avorio 1
CY - Cipro 1
ET - Etiopia 1
KG - Kirghizistan 1
LB - Libano 1
LY - Libia 1
MN - Mongolia 1
MZ - Mozambico 1
NG - Nigeria 1
NI - Nicaragua 1
PA - Panama 1
PS - Palestinian Territory 1
QA - Qatar 1
RS - Serbia 1
SR - Suriname 1
SV - El Salvador 1
SY - Repubblica araba siriana 1
TH - Thailandia 1
Totale 12.159
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Città #
Fairfield 793
Ashburn 764
Singapore 640
Woodbridge 574
Houston 465
San Jose 330
Ferrara 327
Ann Arbor 312
Warsaw 298
Hong Kong 293
Jacksonville 280
Seattle 276
Cambridge 269
Wilmington 257
Chandler 217
Beijing 216
Santa Clara 196
Dallas 175
Ho Chi Minh City 97
Los Angeles 95
Nanjing 92
Izmir 88
Tokyo 83
Hanoi 80
Princeton 75
Lauterbourg 60
San Diego 51
New York 44
Boardman 43
São Paulo 42
Shanghai 41
Dearborn 40
Addison 39
Chicago 37
Mexico City 37
Nanchang 37
London 34
The Dalles 30
Council Bluffs 29
Shenyang 24
Washington 24
Milan 22
Columbus 21
Orem 21
Mountain View 20
San Francisco 20
Toronto 20
Moscow 18
Bologna 16
Brooklyn 15
Changsha 15
Guangzhou 15
Jiaxing 15
Johannesburg 15
Redwood City 15
Chennai 14
Denver 14
Norwalk 14
Baghdad 13
Da Nang 13
Haiphong 13
Jakarta 13
Rome 13
Atlanta 12
Curitiba 12
Hebei 12
Manchester 12
Stockholm 12
Tianjin 12
Belo Horizonte 11
Buffalo 11
Kunming 11
Montreal 11
Rio de Janeiro 11
Boston 10
Des Moines 10
Phoenix 10
Tashkent 10
Auburn Hills 9
Charlotte 9
Frankfurt am Main 9
Quito 9
Zhengzhou 9
Amman 8
Dehradun 8
Guayaquil 8
Jinan 8
Poplar 8
Settimo Milanese 8
Baku 7
Brasília 7
Falls Church 7
Helsinki 7
Istanbul 7
Mumbai 7
Paris 7
Salvador 7
Amsterdam 6
Brussels 6
Buenos Aires 6
Totale 8.593
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Nome #
Dynamic-Bias S-Parameters: A New Measurement Technique for Microwave Transistors 365
A New Dynamic-Bias Measurement Setup for Nonlinear Transistor Model Identification 296
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 275
CHARACTERIZATION AND MODELING OF LOW FREQUENCY DISPERSIVE EFFECTS IN III-V ELECTRON DEVICES 273
A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique 230
A new approach to Class-E power amplifier design 224
A procedure for the extraction of a nonlinear microwave GaN FET model 215
Accurate GaN HEMT nonquasi-static large-signal model including dispersive effects 207
A New Empirical Model for the Characterization of Low-Frequency Dispersive Effects in FET Electron Devices Accounting for Thermal Influence on the Trapping State 204
A dual-source nonlinear measurement system oriented to the empirical characterization of low-frequency dispersion in microwave electron devices 202
75-VDC GaN technology investigation from a degradation perspective 202
Extremely low-frequency measurements using an active bias tee 201
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems 201
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance 198
Experimental Investigation of LF dispersion and IMD asymmetry within GaN based HEMT technology 197
Identification of the optimum operation for GaN HEMTs in high-power amplifiers 195
X-Band GaN Power Amplifier for Future Generation SAR Systems 193
Behavioral Modeling of GaN FETs: a Load-Line Approach 191
Linear versus nonlinear de-embedding: Experimental investigation 190
Nonlinear embedding and de-embedding techniques for large-signal fet measurements 189
Waveform engineering: State-of-the-art and future trends (invited paper) 188
Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design 187
GaN HEMT large-signal model accounting for both low-frequency dispersion and high-frequency non-quasi-static effects 187
Evaluation of FET performance and restrictions by low-frequency measurements 186
On the evaluation of the high-frequency load line in active devices 184
"Hybrid" Approach to microwave power amplifier design 183
A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology 182
Millimeter-Wave FET Nonlinear Modelling Based on the Dynamic-Bias Measurement Technique 180
Technology-Independent Analysis of the Double Current-Gain Peak in Millimeter-Wave FETs 180
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design 179
Thermal characterization of high-power GaN HEMTs up to 65 GHz 178
Evaluation of high-voltage transistor reliability under nonlinear dynamic operation 177
Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers 177
Characterization of GaN HEMT Low-Frequency Dispersion Through a Multi-Harmonic Measurement System 175
GaN HEMT model extraction based on dynamic-bias measurements 174
Characterization of charge-trapping effects in GaN FETs through low-frequency measurements 171
Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements 168
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design 167
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data 164
Microwave FET model identification based on vector intermodulation measurements 162
GaN power amplifier design exploiting wideband large-signal matching 160
Nonlinear model for 40-GHz cold-FET operation 159
A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements 150
GaN HEMT Nonlinear Characterization for Wideband High-Power Amplifier Design 149
Low-Frequency Waveform Engineering Technique for Class-F Microwave Power Amplifier Design 145
Extended operation of class-F power amplifiers using input waveform engineering 145
An Innovative Two-Source Large-Signal Measurement System for the Characterization of Low-Frequency Dispersive Effects in FETs 144
Load-Pull Measurements Oriented to Harmonically-Tuned Power Amplifier Design 139
Power Amplifier Design Accounting for Input Large-Signal Matching 135
Nonlinear modeling of LDMOS transistors for high-power FM transmitters 133
Class-A Power Amplifier Design Technique Based on Electron Device Low-Frequency Characterization 130
Characterization of Electron Device Breakdown Under Nonlinear Dynamic Operation 129
A New Modeling Technique for Microwave Multicell Transistors Based on EM Simulations 125
Influence of the Gate Current Dynamic Behaviour on GaAs HEMT Reliability Issues 122
Current-gain in FETs beyond cut-off frequency 122
GaN HEMT Model with Enhanced Accuracy under Back-off Operation 119
GaN FET Load-Pull Data in Circuit Simulators: a Comparative Study 118
A new description of fast charge-trapping effects in GaN FETs 117
An Improved Transistor Modeling Methodology Exploiting the Quasi-Static Approximation 111
null 110
A Load–Pull Characterization Technique Accounting for Harmonic Tuning 109
Advanced Measurement Techniques for Nonlinear Modelling of GaN HEMTs: From L-band to mm-Wave Applications 105
null 102
null 100
Nonlinear Embedding and De-embedding: Theory and Applications 99
null 97
High-periphery GaN HEMT modeling up to 65 GHz and 200 °C 93
null 86
null 86
Empowering GaN HEMT models: The gateway for power amplifier design 85
C-Band Power Amplifier Design Based on Low-Frequency Waveform Engineering 85
Temperature Dependent Small-Signal Neural Modeling of High-Periphery GaN HEMTs 84
A Low-Cost and Accurate Technique for the Prediction of Load-Pull Contours 80
Evaluation of Microwave Transistor Degradation Using Low-Frequency Time-Domain Measurements 75
Scalability of Multifinger HEMT Performance 73
Nonlinear Characterization of GaN Transistors under Dynamic Bias Operation 64
null 63
Extraction of accurate GaN HEMT model for high-efficiency power amplifier design 61
Nonlinear Modelling of GaN Transistors: Behavioural and Analytical Approaches 58
null 53
Totale 12.317
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Categoria #
all - tutte 55.366
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 582
Totale 55.948
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202176 0 0 0 0 0 0 0 0 0 0 0 76
2021/2022801 42 67 54 13 41 53 45 53 38 72 104 219
2022/2023595 80 5 18 40 93 111 33 71 96 7 28 13
2023/2024444 32 70 36 21 45 85 17 17 11 8 14 88
2024/20251.442 32 44 129 12 221 16 59 143 223 193 253 117
2025/20263.958 325 242 473 467 644 232 392 179 403 459 122 20
Totale 12.317