Nonlinear modeling of GaN HEMTs is a challenging task especially when accurate predictions are desired under nonlinear dynamic operation. This is mainly due to the dispersion phenomena affecting state-of-the-art devices that must be accurately characterized and correctly accounted for during the development of their nonlinear model. The challenge becomes harder as frequency, power and circuit complexity increase as being demanded by the marketplace for the upcoming 5G-related applications. In this paper, nonlinear measurement techniques are discussed which allow the accurate characterization of microwave GaN HEMTs under actual operating conditions. The paper also discusses how to use these measurements in the extraction phase of nonlinear models highlighting the benefits of their adoption for modeling purposes.
Advanced Measurement Techniques for Nonlinear Modelling of GaN HEMTs: From L-band to mm-Wave Applications
Vadalà Valeria;Raffo A.;Bosi Gianni;Vannini Giorgio
2021
Abstract
Nonlinear modeling of GaN HEMTs is a challenging task especially when accurate predictions are desired under nonlinear dynamic operation. This is mainly due to the dispersion phenomena affecting state-of-the-art devices that must be accurately characterized and correctly accounted for during the development of their nonlinear model. The challenge becomes harder as frequency, power and circuit complexity increase as being demanded by the marketplace for the upcoming 5G-related applications. In this paper, nonlinear measurement techniques are discussed which allow the accurate characterization of microwave GaN HEMTs under actual operating conditions. The paper also discusses how to use these measurements in the extraction phase of nonlinear models highlighting the benefits of their adoption for modeling purposes.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
