We present a measurement technique for the characterization of the degradation in microwave transistors. The time-domain setup operates in the megahertz range to set a realistic load-line for the device. Data on the degradation of a microwave transistor are reported.

Evaluation of Microwave Transistor Degradation Using Low-Frequency Time-Domain Measurements

Bosi G.
Primo
;
Vadala' V.
Secondo
;
Raffo A.
Penultimo
;
Vannini G.
Ultimo
2021

Abstract

We present a measurement technique for the characterization of the degradation in microwave transistors. The time-domain setup operates in the megahertz range to set a realistic load-line for the device. Data on the degradation of a microwave transistor are reported.
2021
9789463968027
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/2474735
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