In this paper the nonlinear model of a GaN transistor is extracted starting from dynamic bias measurements under class-F operation. Thanks to this technique, applied for the first time to high-efficiency classes of operation, one can get at once and separately the nonlinear currents and charges of the transistor in actual operating conditions. As case study a 0.25-μm GaN HEMT is considered. The model has been fully validated through comparison with harmonic load-pull measurements carried out at 5 GHz.
|Titolo:||Extraction of accurate GaN HEMT model for high-efficiency power amplifier design|
|Data di pubblicazione:||2015|
|Appare nelle tipologie:||04.2 Contributi in atti di convegno (in Volume)|