This letter aims at investigating the impact of the gate width on the microwave field effect transistor (FET) performance, focusing on the GaAs high-electron-mobility transistor (HEMT) technology as a case study. To accomplish this complex task, the small-signal equivalent-circuit elements together with the major RF figures of merit are thoroughly analyzed for seven HEMTs based on an interdigitated layout. The gate-width impact on the device performance is quantitatively and exhaustively estimated using a mathematical and systematical approach.

Scalability of Multifinger HEMT Performance

Raffo A.
Secondo
;
Vadala Valeria;Vannini G.;
2020

Abstract

This letter aims at investigating the impact of the gate width on the microwave field effect transistor (FET) performance, focusing on the GaAs high-electron-mobility transistor (HEMT) technology as a case study. To accomplish this complex task, the small-signal equivalent-circuit elements together with the major RF figures of merit are thoroughly analyzed for seven HEMTs based on an interdigitated layout. The gate-width impact on the device performance is quantitatively and exhaustively estimated using a mathematical and systematical approach.
2020
Crupi, G.; Raffo, A.; Vadala, Valeria; Vannini, G.; Schreurs, D. M. M. -P.; Caddemi, A.
File in questo prodotto:
File Dimensione Formato  
LMWC3012181.pdf

Open Access dal 09/08/2022

Descrizione: post print
Tipologia: Post-print
Licenza: PUBBLICO - Pubblico con Copyright
Dimensione 525.74 kB
Formato Adobe PDF
525.74 kB Adobe PDF Visualizza/Apri
Scalability_of_Multifinger_HEMT_Performance.pdf

solo gestori archivio

Descrizione: Full text editoriale
Tipologia: Full text (versione editoriale)
Licenza: NON PUBBLICO - Accesso privato/ristretto
Dimensione 1.25 MB
Formato Adobe PDF
1.25 MB Adobe PDF   Visualizza/Apri   Richiedi una copia

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/2422254
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 12
  • ???jsp.display-item.citation.isi??? 10
social impact