Dealing with high-power operation (i.e., >100 W) is extremely critical to power-amplifier designers due to the lack of accurate transistor models of multicell (i.e., powerbar) devices. The reason is twofold: from one side, it is extremely difficult to characterize high-power transistors (e.g., device instability, thermal issues, microwave instrumentation costs, and measurement uncertainty that drastically increases with the investigated power level); and from the other side, the scaling proprieties of the model, moving from the unit-cell device to the multicell one, are inherently poor due to the different passive access structures to the active-device area. In this article, for the first time, an accurate modeling technique oriented to multicell devices is described, which allows one to extract a compact model of a multicell transistor showing similar prediction accuracy of the unit-cell one. Our assumptions have been widely demonstrated in the manuscript by a comprehensive characterization campaign from small-to large-signal operations carried out on both the unit-and multicell devices.

A New Modeling Technique for Microwave Multicell Transistors Based on EM Simulations

Raffo A.
Primo
;
Vadala V.;Bosi G.;Vannini G.
Ultimo
2020

Abstract

Dealing with high-power operation (i.e., >100 W) is extremely critical to power-amplifier designers due to the lack of accurate transistor models of multicell (i.e., powerbar) devices. The reason is twofold: from one side, it is extremely difficult to characterize high-power transistors (e.g., device instability, thermal issues, microwave instrumentation costs, and measurement uncertainty that drastically increases with the investigated power level); and from the other side, the scaling proprieties of the model, moving from the unit-cell device to the multicell one, are inherently poor due to the different passive access structures to the active-device area. In this article, for the first time, an accurate modeling technique oriented to multicell devices is described, which allows one to extract a compact model of a multicell transistor showing similar prediction accuracy of the unit-cell one. Our assumptions have been widely demonstrated in the manuscript by a comprehensive characterization campaign from small-to large-signal operations carried out on both the unit-and multicell devices.
2020
Raffo, A.; Vadala, V.; Yamamoto, H.; Kikuchi, K.; Bosi, G.; Ui, N.; Inoue, K.; Vannini, G.
File in questo prodotto:
File Dimensione Formato  
Raffo.2020.VoR.pdf

solo gestori archivio

Descrizione: versione editoriale
Tipologia: Full text (versione editoriale)
Licenza: NON PUBBLICO - Accesso privato/ristretto
Dimensione 5.16 MB
Formato Adobe PDF
5.16 MB Adobe PDF   Visualizza/Apri   Richiedi una copia

I documenti in SFERA sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/2420980
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 23
  • ???jsp.display-item.citation.isi??? 16
social impact